Results 101 to 110 of about 29,909,859 (245)

Short‐Term Agricultural Drought Prediction Using Explainable Data‐Driven Models and Quantified Uncertainty

International Journal of Climatology, EarlyView.
This study demonstrates that explainable deep learning models can skilfully predict short‐term agricultural drought using standardized drought indices, capturing hydroclimatic memory and seasonal persistence. The integration of uncertainty quantification and SHAP‐based interpretability reveals the dominant role of antecedent moisture and climate ...
K. Saranya Das, N. R. Chithra, Venkataramana Sridhar   +2 more
wiley   +1 more source

Room‐Temperature Polariton Condensation Into Superscar Modes in Growth‐Defined Triangular Micro‐Prism Resonators

Laser &Photonics Reviews, EarlyView.
High‐Q superscar modes in growth‐defined triangular GaN micro‐prism resonators enable strong exciton–photon coupling and room‐temperature polariton condensation, offering a scalable platform for integrated III‐nitride polariton devices. ABSTRACT Group III‐nitride semiconductors are regarded as key materials for realizing polariton devices operating at ...
Chan‐Young Sung, Jungwon Kim, Daegwang Choi, Hyun Gyu Song, Yong‐Hoon Cho   +4 more
wiley   +1 more source

Using gate leakage conduction to understand positive gate bias induced threshold voltage shift in p-GaN gate HEMTs

, 2022
In this work, the gate current characteristics are investigated to explain the threshold voltage shift in AlGaN/GaN high electron mobility transistors (HEMTs) with a p-GaN gate.
Tang, Shun-Wei, Lo, Ting-Chun, Posthuma, Niels, Wu, Tian-Li, Wellekens, Dirk, Chen, Szu-Chia, Lin, Wei-Syuan, Bakeroot, Benoit, Huang, Zhen-Hong, Borga, Matteo, Decoutere, Stefaan, Benoit Bakeroot, Niels Posthuma, Tian-Li Wu, Ting-Chun Lo, Matteo Borga, Zhen-Hong Huang, Wei-Syuan Lin, Stefaan Decoutere, Dirk Wellekens, Shun-Wei Tang, Szu-Chia Chen   +21 more
core   +1 more source

Artificial Intelligence‐Driven Natural Product Drug Discovery: From Computational Genome Mining to Clinical Translation

Medicinal Research Reviews, EarlyView.
ABSTRACT Natural products (NPs) have historically yielded numerous therapeutic agents, yet their integration into modern drug discovery has been constrained by chemical complexity, low abundance, laborious dereplication, and limited target annotation.
Antonio Lavecchia
wiley   +1 more source

Mechanism of leakage current increase in p-GaN gate AlGaN/GaN power devices induced by ON-state gate bias

, 2018
An increase in OFF-state leakage current in p-GaN gate AlGaN/GaN high-electron-mobility transistors (HEMTs), induced by ON-state gate bias, was observed and reported in this paper.
Tanner, Philip, Li, Baikui, Dimitrijev, Sima, Wang, Jiannong, Han, Jisheng, Li, Hui, Moghadam, Hamid Amini, Amini Moghadam, Hamid, https://orcid.org/, Tang, Xi   +9 more
core   +1 more source

Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation

IEEE Journal of the Electron Devices Society
For the first time, we use electrical characterization, spectrally-resolved electroluminescence measurements and degradation tests to explain the negative activation energy of gate reliability in power GaN HEMTs with p-GaN Schottky gate.
Manuel Fregolent, Mirco Boito, Michele Disaro, Carlo De Santi, Matteo Buffolo, Eleonora Canato, Michele Gallo, Cristina Miccoli, Isabella Rossetto, Giansalvo Pizzo, Alfio Russo, Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini   +14 more
doaj   +1 more source

Monolithic 650-V Dual-Gate p-GaN Bidirectional Switch

IEEE Transactions on Electron Devices
This article is about the study and characterization of a monolithically integrated dual-gate bidirectional switch (BDS) realized in a CMOS-compatible gallium nitride (GaN) pilot line. The switch is based on a p-GaN gate enhancement-mode (E-mode) high-electron-mobility transistor (HEMT) rated for 650 V and provides a symmetrical electrical operation in
G. Baratella, U. Chatterjee, O. Syshchyk, M. Borga, E. Fabris, T. Cosnier, B. Bakeroot, S. Decoutere   +7 more
openaire   +2 more sources

Integrating bioassays and transcriptomics to detect neonicotinoid resistance in Australian Bemisia tabaci MEAM1

Pest Management Science, EarlyView.
The Bemisia tabaci MEAM1 strain GR15‐1R shows partial resistance to neonicotinoids (bottom), which correlates with an increased expression of the P450 gene CYP6CM1 compared to the insecticide‐susceptible strain SU07‐1 (top). Abstract BACKGROUND Bemisia tabaci MEAM1 is a highly invasive and polyphagous pest species of agricultural and horticultural ...
Cao (Grace) Fang, Jacob Balzer, Michael Frese, Wee Tek Tay, Tom Walsh, Jamie Hopkinson   +5 more
wiley   +1 more source

Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs. [PDF]

Micromachines (Basel), 2023
Langpoklakpam C, Liu AC, You NJ, Kao MH, Huang WH, Shen CH, Tzou J, Kuo HC, Shieh JM.   +8 more
europepmc   +1 more source

Reliability Issues and Degradation Mechanisms of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review

IEEE Access
GaN-HEMTs on silicon (Si) or SiC or sapphire substrates are growing in popularity and is expected to completely transform the power electronics industry. Although GaN HEMTs operate in D-Mode by default, E-Mode operation is necessary for ease of IC design,
J. Ajayan, Asisa Kumar Panigrahy, Sachidananda Sen, Maneesh Kumar, Shubham Tayal   +4 more
doaj   +1 more source