Results 101 to 110 of about 43,262 (231)
, 2021 In this work, the impacts of OFF-state gate bias (VGS,OFF) on the dynamic on-resistance (RON) are investigated in the commercial Schottky-type p-GaN gate high-electron-mobility transistor (HEMT).
Xinran Huang +11 more
core +1 more source
ZnO Nanowires by Chemical Bath Deposition: A Review on Doping and Functional Devices
Electron, EarlyView.This review reports the most recent and well‐established state‐of‐the‐art and scientific challenges related to the doping of ZnO nanowires by chemical bath deposition, encompassing native point and hydrogen‐related defects, as well as extrinsic dopants.
Clément Lausecker +3 more
wiley +1 more source
Energy Science &Engineering, EarlyView.ABSTRACT Accurate long‐term wind speed forecasting is pivotal for the strategic planning of renewable energy infrastructure, particularly for assessing the techno‐economic feasibility of wind‐powered green hydrogen facilities. However, capturing the complex spatiotemporal dependencies in climate data remains a significant challenge. This study proposes
Iman Baghaei +2 more
wiley +1 more source
Impact of carrier injections on the threshold voltage in p-GaN gate AlGaN/GaN power HEMTs
, 2019 We investigated the threshold voltage (V TH) shift in p-GaN gate AlGaN/GaN power HEMTs under both forward and reverse gate bias conditions at different temperatures. With increasing forward gate bias, the V TH first positively shifted and then decreased.
Li, Baikui +11 more
core +2 more sources
Information &Functional Materials, EarlyView.This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou +5 more
wiley +1 more source
, 2020 The low-temperature gate reliability of Schottky-type p-GaN gate AlGaN/GaN heterojunction field-effect transistors under forward gate voltage stress is investigated.
Zheng, Zheyang +13 more
core +1 more source
Laser‐Direct Printed 2D Material‐Based Heterostructure for the Fabrication of Electronic Devices
Small, EarlyView.The Digital Laser‐Induced Forward Transfer (LIFT) approach is employed to pattern and stack 2D materials with micrometer‐scale precision. PdSe2 and MoSe2 are assembled into vertical p–n junctions, with graphene serving as a transparent electrode. The resulting laser‐transferred heterostructures exhibit high material quality and stable rectifying ...
Ilias Cheliotis +12 more
wiley +1 more source
Enhancement-Mode InAlN/GaN MISHEMT with Low Gate Leakage Current
, 2012 We report an enhancement-mode InAlN/GaN MISHEMT with a low gate leakage current by a thermal oxidation technique under gate.The off-state source-drain current density is as low as～10~(17) A/mm at V_(GS)= 0 V and V_(DS) = 5 V.The threshold voltage is ...
Gu GD(顾国栋) +7 more
core
A Context‐Aware Decision Support Framework for Scientific Experiment Configuration
Software: Practice and Experience, EarlyView.ABSTRACT Introduction Defining an experimental configuration is a complex decision problem for early‐stage researchers, who must map goals, constraints, and requirements onto datasets, algorithms, and parameter settings that directly affect experimental outcomes.
Pouriya Miri +3 more
wiley +1 more source
Monolithic 650-V Dual-Gate p-GaN Bidirectional Switch
IEEE Transactions on Electron DevicesThis article is about the study and characterization of a monolithically integrated dual-gate bidirectional switch (BDS) realized in a CMOS-compatible gallium nitride (GaN) pilot line. The switch is based on a p-GaN gate enhancement-mode (E-mode) high-electron-mobility transistor (HEMT) rated for 650 V and provides a symmetrical electrical operation in
G. Baratella +7 more
openaire +2 more sources