Results 81 to 90 of about 29,909,859 (245)

Conductivity-modulated hysteresis-free GaN P-GIT via 2DEG back-gate [PDF]

APL Electronic Devices
This study presents the development of hysteresis-free GaN-based p-channel gate injection transistors. The exceptional quality of the AlGaN/GaN hetero-interface, where the 2-D electron gas (2DEG) serves as the back gate metal, substantially contributes ...
Jiaolong Liu, Xi Tang, Yingjie Wang, Qimeng Jiang, Xinhua Wang, Jianxun Liu, Qian Sun, Xinyu Liu, Sen Huang   +8 more
doaj   +1 more source

AI‐Powered Smart Displays and AR Glasses: Perspectives and Challenges

Advanced Intelligent Systems, EarlyView.
This perspective examines how AI is reshaping smart displays and AR glasses. The latest in image‐quality enhancement, sensor‐integrated display optimization, and physiological sensing in display systems, followed by AI‐assisted AR technologies including waveguide optimization, image compensation, foveated rendering, and multimodal sensing, is discussed.
Luke Benoit, Yizhou Qian, Yi‐Chien Chen, Ziyang Shen, Po‐Sheng Chiu, Youngeon Lee, Cheng‐Han Ke, Chih‐Lung Lin, Shin‐Tson Wu   +8 more
wiley   +1 more source

SiN/in-situ-GaON Staggered Gate Stack on p-GaN for Enhanced Stability in Buried-Channel GaN p-FETs

, 2021
GaN-based complementary logic (CL) integrated circuits (ICs) for the prospective power integration have been demonstrated on the commercial p-GaN gate power HEMT (high-electron-mobility transistor) platform.
Tao Chen, Zheng, Zheyang, Ng, Yat Hon, Song, Wenjie, Wenjie Song, Zhang, Li, Chen, Tao, Li Zhang, Cheng, Yan, Kevin J. Chen, Zheyang Zheng, Yat Hon Ng, Feng, Sirui, Chen, Kevin J., Yan Cheng, Sirui Feng   +15 more
core   +1 more source

Kinematic‐Aware Diffusion Model Correction for Human Motion Generation via Pose Transfer

Advanced Intelligent Systems, EarlyView.
Overall architecture of the proposed video kinematic pose correction pipeline. The framework integrates diffusion‐based video generation, multi‐estimator skeleton extraction, temporal Kalman smoothing, biomechanical constraint enforcement, and pose‐conditioned frame regeneration via Pose‐guided Image Synthesis and Editing. This paper presents Kinematic‐
Alaa Abdullah Albaghdadi, Ahmad R. Naghsh‐Nilchi   +1 more
wiley   +1 more source

High Breakdown Voltage P-GaN Gate HEMTs with Threshold Voltage of 7.1 v

In this study, we proposed an enhanced mode P-GaN/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) by combining thermal oxidation treatment of P-GaN with atomic layer deposition (OTALD) prior to gate metal deposition.
Cui, P, Zhang, T, Wang, L, Han, J, Chen, S, Luo, X, Dai, J, Qi, K, Xu, X, Linewih, H, Lin, Z   +10 more
core   +1 more source

Influence of polarization coulomb field scattering on the subthreshold swing in E-mode p-GaN/AlGaN/GaN HEMTs

Journal of Physics Communications
In the present study, p-GaN/AlGaN/GaN HEMTs treated with hydrogen plasma passivation were fabricated. Capacitance–voltage (C-V) and current–voltage(I-V) characteristics of these devices were subsequently measured.
Heyu Liu, Mingyan Wang, Heng Zhou, Guohao Yu, Honghuan Guo, Baoshun Zhang, Peng Cui, Zhaojun Lin   +7 more
doaj   +1 more source

High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al_0.17Ga_0.83N/Al_0.3Ga_0.7N Barrier Layers Design

IEEE Journal of the Electron Devices Society, 2018
In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed.
Hsien-Chin Chiu, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Wei Hu, Rong Xuan   +6 more
doaj   +1 more source

DeepCPP: A Deep Learning‐Based Framework for Enhanced Prediction of Cell Penetrating Peptides

Advanced Intelligent Systems, EarlyView.
DeepCPP is a multimodal deep learning framework designed to improve the identification of cell‐penetrating peptides. By integrating sequence‐derived evolutionary information with structural graph representations through a dual‐encoder architecture and fusion strategy, the model captures complementary molecular features.
Soualihou Ngnamsie Njimbouom, Candra Zonyfar, Jeong‐Dong Kim   +2 more
wiley   +1 more source

Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate

IEEE Journal of the Electron Devices Society, 2019
We report on the implementation of dynamic body-bias technique to improve the performance of AlGaN/GaN high electron mobility transistors (HEMTs) with the successful integration of body-diode.
Isra Mahaboob, Michael Yakimov, Kasey Hogan, Emma Rocco, Sean Tozier, F. Shahedipour-Sandvik   +5 more
doaj   +1 more source

Gate Reliability of Schottky-Type p-GaN Gate HEMTs Under AC Positive Gate Bias Stress With a Switching Drain Bias

, 2022
With a switching drain bias, the gate reliability of Schottky-type p-GaN gate high-electron-mobility transistors (HEMTs) under AC positive gate bias stress has been systematically investigated.
Zheng, Zheyang, Cheng, Yan, Xu, Han, Chen, Kevin J., He, Jiabei, Zhong, Kailun, Sun, Jiahui   +6 more
core   +1 more source