Results 81 to 90 of about 3,650 (215)

Reliability Issues and Degradation Mechanisms of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review

IEEE Access
GaN-HEMTs on silicon (Si) or SiC or sapphire substrates are growing in popularity and is expected to completely transform the power electronics industry. Although GaN HEMTs operate in D-Mode by default, E-Mode operation is necessary for ease of IC design,
J. Ajayan, Asisa Kumar Panigrahy, Sachidananda Sen, Maneesh Kumar, Shubham Tayal   +4 more
doaj   +1 more source

Monolithic 650-V Dual-Gate p-GaN Bidirectional Switch

IEEE Transactions on Electron Devices
This article is about the study and characterization of a monolithically integrated dual-gate bidirectional switch (BDS) realized in a CMOS-compatible gallium nitride (GaN) pilot line. The switch is based on a p-GaN gate enhancement-mode (E-mode) high-electron-mobility transistor (HEMT) rated for 650 V and provides a symmetrical electrical operation in
G. Baratella, U. Chatterjee, O. Syshchyk, M. Borga, E. Fabris, T. Cosnier, B. Bakeroot, S. Decoutere   +7 more
openaire   +2 more sources

Nanomedicine applications in lymphoma: Advancing precision diagnostics, targeted therapeutics, and prospective developments

VIEW, EarlyView.
Lymphoma is a group of blood cancers that can appear in lymph nodes, blood, bone marrow, spleen, liver, or the central nervous system, which makes drug delivery and disease monitoring difficult. This review summarizes how nanomedicine technologies may improve targeted treatment and imaging, while carefully separating approved or guideline‐supported ...
Mohd Ahmar Rauf, Yara Mashal, Afeefa Rao, Nasar Ata, Arun K. Iyer, Farhan Shah   +5 more
wiley   +1 more source

Negative Activation Energy of Gate Reliability in Schottky-Gate p-GaN HEMTs: Combined Gate Leakage Current Modeling and Spectral Electroluminescence Investigation

IEEE Journal of the Electron Devices Society
For the first time, we use electrical characterization, spectrally-resolved electroluminescence measurements and degradation tests to explain the negative activation energy of gate reliability in power GaN HEMTs with p-GaN Schottky gate.
Manuel Fregolent, Mirco Boito, Michele Disaro, Carlo De Santi, Matteo Buffolo, Eleonora Canato, Michele Gallo, Cristina Miccoli, Isabella Rossetto, Giansalvo Pizzo, Alfio Russo, Ferdinando Iucolano, Gaudenzio Meneghesso, Enrico Zanoni, Matteo Meneghini   +14 more
doaj   +1 more source

Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs. [PDF]

Micromachines (Basel), 2023
Langpoklakpam C, Liu AC, You NJ, Kao MH, Huang WH, Shen CH, Tzou J, Kuo HC, Shieh JM.   +8 more
europepmc   +1 more source

Edge‐Channel Aggregation Network and Two‐Stage Fine Tuning Scheme for Handwritten Dongba Character Recognition

CAAI Transactions on Intelligence Technology, EarlyView.
ABSTRACT Handwritten Dongba Character Recognition (HDCR) contains a large number of visually similar characters with subtle and fragile edge cues, posing severe challenges to feature learning. To address this issue, an Edge Channel Aggregation Network (EdgeCANet) model is proposed.
Xiali Li, Yang Xiao, Xiaojun Bi, Yanlong Luo   +3 more
wiley   +1 more source

Recovery of drain-induced threshold voltage shift by positive gate bias in GaN power HEMTs with p-GaN gate

Applied Physics Express
We demonstrate that exposure to positive gate bias can favor a fast recovery of the threshold voltage variation induced by off-state stress, in p-GaN gate high electron mobility transistors. Two process splits were investigated, having different Schottky
D. Favero, C. De Santi, A. Nardo, A. Dixit, P. Vanmeerbeek, A. Stockman, M. Tack, G. Meneghesso, E. Zanoni, M. Meneghini   +9 more
doaj   +1 more source

Task‐Aligned Haze Removal With Semantic‐Aware Fusion and Contrast Self‐Correction

CAAI Transactions on Intelligence Technology, EarlyView.
ABSTRACT Adverse haze conditions introduce complex degradations that obscure scene details and distort structural cues critical for object detection, posing persistent challenges for vision‐based sensing systems. Although existing haze removal methods have achieved notable improvements in visual clarity, their optimisation objectives are often ...
Jinbin Wang, Aiping Yang, Guosong Jiang, Wenlong Yu, Dongwei Ren, Qinghua Hu   +5 more
wiley   +1 more source

Analysis of RTN Induced by Forward Gate Stress in GaN HEMTs with a Schottky p-GaN Gate

2024 IEEE International Reliability Physics Symposium (IRPS)
In this work, a random telegraph noise (RTN) analysis has been carried out, to the best of our knowledge, for the first time to characterize the defects activated by forward-biased gate stress in GaN-HEMTs with metal/pGaN Schottky gate. The RTN signal has been measured for both gate leakage (IG) and drain current (ID), after each stress phase until the
Millesimo M., Fiegna C., Bakeroot B., Borga M., Posthuma N., Decoutere S., Sangiorgi E., Tallarico A. N.   +7 more
openaire   +1 more source

Harvesting benefits: Exploring the effects of second‐best policies on enhancing soil organic carbon stocks in agriculture

American Journal of Agricultural Economics, EarlyView.
Abstract Agricultural subsidies can be an effective policy tool to enhance soil organic carbon sequestration. This paper assesses the effectiveness of a second‐best hypothetical policy which subsidizes additional canola hectares optimally for each soil zone in Saskatchewan in an effort to increase soil organic carbon.
Devin A. Serfas
wiley   +1 more source