Results 81 to 90 of about 43,262 (231)

Single‐Cell Reveal GALNT7‐Dependent Ferroptosis Suppression as a Mechanism of Immunotherapy Resistance in Non‐Small Cell Lung Cancer

Advanced Science, EarlyView.
Integrated clinical and mechanistic analyses identify GALNT7 as a ferroptosis‐suppressive regulator associated with immunotherapy resistance in non‐small cell lung cancer. GALNT7 depletion promotes lipid peroxidation, mitochondrial dysfunction, and ferroptosis, enhances CD8+ T‐cell activation and IFN‐γ production, and sensitizes tumors to PD‐1 blockade,
Jiadi Gan, Qian Zheng, Deng Liu, Ruichao Nie, Menglin Yao, Xiaolong Tang, Renjie Xu, Jinghong Xian, Wenjun Meng, Wenxin Luo, Dan Liu, Guiyi Ji   +11 more
wiley   +1 more source

Conductivity-modulated hysteresis-free GaN P-GIT via 2DEG back-gate [PDF]

APL Electronic Devices
This study presents the development of hysteresis-free GaN-based p-channel gate injection transistors. The exceptional quality of the AlGaN/GaN hetero-interface, where the 2-D electron gas (2DEG) serves as the back gate metal, substantially contributes ...
Jiaolong Liu, Xi Tang, Yingjie Wang, Qimeng Jiang, Xinhua Wang, Jianxun Liu, Qian Sun, Xinyu Liu, Sen Huang   +8 more
doaj   +1 more source

Temperature-Dependent Gate Degradation of $p$-GaN Gate HEMTs under Static and Dynamic Positive Gate Stress

, 2019
This paper experimentally investigates the time-dependent gate degradation of Schottky-type p-GaN gate transistors subjected to positive gate voltage stress.
Jiabei He, Song Yang, Yang, Song, Kevin J. Chen, Wei, Jin, Zhong, Kaikun, Mengyuan Hua, Chen, Kevin J., Hua, Mengyuan, He, Jiabei, Jin Wei, Kaikun Zhong   +11 more
core   +1 more source

Surge-Energy and Overvoltage Ruggedness of P-Gate GaN HEMTs

, 2020
An essential ruggedness of power devices is the capability of safely withstanding the surge energy. The surge ruggedness of the GaN high-electron-mobility transistor (HEMT), a power transistor with no or minimal avalanche capability, has not been fully ...
Zhang, Yuhao, Yuhao Zhang, Zhang, Ruizhe, Liu, Jingcun, Ruizhe Zhang, Jingcun Liu, Kozak, Joseph P., Joseph P. Kozak, Ming Xiao, Xiao, Ming   +9 more
core   +1 more source

Causal‐Guided Ultra‐Long‐Term Time Series Forecasting Via Anticipated Covariates

Advanced Science, EarlyView.
Often treated as unknown, information from the future remains underutilized.We demonstrate that in a coupled dynamical system, providing the future state of the effect enables accurate forecasting of the cause for a long timesteps. A time series forecasting paradigm that introduces anticipated covariates to represent such known future states is ...
Jintong Zhao, Yufei Liu, Ruixi Huang, Zhongxue Gan, Siyang Leng   +4 more
wiley   +1 more source

High Breakdown Voltage P-GaN Gate HEMTs with Threshold Voltage of 7.1 v

In this study, we proposed an enhanced mode P-GaN/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MIS-HEMTs) by combining thermal oxidation treatment of P-GaN with atomic layer deposition (OTALD) prior to gate metal deposition.
Cui, P, Zhang, T, Wang, L, Han, J, Chen, S, Luo, X, Dai, J, Qi, K, Xu, X, Linewih, H, Lin, Z   +10 more
core   +1 more source

Intrinsic Dual‐Phase Regulated GeSe2 Nanoparticles Triggered by Ball‐Milling Treatment for Photonic Multi‐Valued Logic Circuits

Advanced Science, EarlyView.
We report the solid‐state ball milling, a traditional, reliable, mass‐productive material processing, to prepare the air‐stable and dual‐phase GeSe2‐x nanoparticles with extended photodetection feasibility toward optical‐wavelength regions. We further display photonic multi‐valued logic (MVL) circuit through the employment of a hybrid PMMA/GeSe2‐x ...
An‐Ting Tsai, Chun‐Jen Wang, Pin‐Chao Liao, Chin Shan Lue, Chia‐Nung Kuo, Le Vo Phuong Thuan, Po‐Hsuan Hsiao, Chang‐Hyun Kim, Chia‐Yun Chen   +8 more
wiley   +1 more source

Influence of polarization coulomb field scattering on the subthreshold swing in E-mode p-GaN/AlGaN/GaN HEMTs

Journal of Physics Communications
In the present study, p-GaN/AlGaN/GaN HEMTs treated with hydrogen plasma passivation were fabricated. Capacitance–voltage (C-V) and current–voltage(I-V) characteristics of these devices were subsequently measured.
Heyu Liu, Mingyan Wang, Heng Zhou, Guohao Yu, Honghuan Guo, Baoshun Zhang, Peng Cui, Zhaojun Lin   +7 more
doaj   +1 more source

High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al_0.17Ga_0.83N/Al_0.3Ga_0.7N Barrier Layers Design

IEEE Journal of the Electron Devices Society, 2018
In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed.
Hsien-Chin Chiu, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Wei Hu, Rong Xuan   +6 more
doaj   +1 more source

Machine Learning Interatomic Potentials for Energy Materials: Architectures, Training Strategies, and Applications

Advanced Energy Materials, EarlyView.
Machine learning interatomic potentials bridge quantum accuracy and computational efficiency for materials discovery. Architectures from Gaussian process regression to equivariant graph neural networks, training strategies including active learning and foundation models, and applications in solid‐state electrolytes, batteries, electrocatalysts ...
In Kee Park, Saeed Pourasad, Jinhong Mun, Arunkumar Chitteth Rajan, Tae Hyeon Park, Anand Rohit, Mohammad Zafari, Tan‐Lien Pham, Eunjae Jung, Bonseung Koo, Miran Ha, Gi Beom Sim, Hyun Gyu Park, Won Woong Choi, Kwanghyeon Jo, Soohaeng Yoo Willow, David ChangMo Yang, Chang Woo Myung, Geunsik Lee, Kwang S. Kim   +19 more
wiley   +1 more source