Results 61 to 70 of about 3,650 (215)

Green and Low‐Carbon Synthesis of Lithium Sulfide (Li2S): From Fundamental Mechanisms to Scalable Manufacturing for Next‐Generation Energy Storage

Advanced Science, EarlyView.
This review focuses on green synthesis routes for lithium sulfide (Li2S)—a key material for lithium–sulfur batteries and sulfide solid electrolytes, whose traditional carbothermal reduction remains energy‐intensive and unsustainable. Specifically examined routes include low‐temperature solid‐state reactions, magnesiothermal reduction, and solution ...
Aiping Peng, Xingtao Qi, Lingfeng Zhu, Ningrui Zhan, Yaohui Qu, Hui Li, Hai Zhang, Fan Wang, Ze Zhang, Xuewen Wang, Zhenyu Yang, Tianyi Ma   +11 more
wiley   +1 more source

High-Performance Normally Off p-GaN Gate HEMT With Composite AlN/Al_0.17Ga_0.83N/Al_0.3Ga_0.7N Barrier Layers Design

IEEE Journal of the Electron Devices Society, 2018
In this paper, a novel normally off p-gallium nitride (GaN) gate high electron-mobility transistor (HEMT) with composite AlN/Al0.17Ga0.83N/Al0.3Ga0.7N barrier layers is proposed.
Hsien-Chin Chiu, Yi-Sheng Chang, Bo-Hong Li, Hsiang-Chun Wang, Hsuan-Ling Kao, Chih-Wei Hu, Rong Xuan   +6 more
doaj   +1 more source

ZnO Nanowires for Ultraviolet Detection: Recent Developments, Challenges, and Future Outlook

Advanced Electronic Materials, EarlyView.
This work provides a comprehensive review of Zinc Oxide (ZnO) nanowires for high‐performance ultraviolet (UV) photodetection. By analyzing unique device physics and various detector architectures, it unveils strategies to overcome current performance limitations regarding speed and sensitivity.
Ala K. Jehad, Salih Alper Akalin, Mustafa Erol, Yavuz Ozturk, Metin Yurddaskal   +4 more
wiley   +1 more source

Influence of polarization coulomb field scattering on the subthreshold swing in E-mode p-GaN/AlGaN/GaN HEMTs

Journal of Physics Communications
In the present study, p-GaN/AlGaN/GaN HEMTs treated with hydrogen plasma passivation were fabricated. Capacitance–voltage (C-V) and current–voltage(I-V) characteristics of these devices were subsequently measured.
Heyu Liu, Mingyan Wang, Heng Zhou, Guohao Yu, Honghuan Guo, Baoshun Zhang, Peng Cui, Zhaojun Lin   +7 more
doaj   +1 more source

Low Thermal Resistance Architectures for AlGaN‐Based Semiconductor Devices

Advanced Electronic Materials, EarlyView.
Engineering channel thickness and substrate material significantly improves thermal management in AlGaN RF devices. A 5 nm AlGaN channel integrated on an AlN substrate achieved a record‐low thermal resistance of 3.96 K·mm${\rm K}\cdot{\rm mm}$/W, representing an 88.7% reduction compared with 500 nm AlGaN‐on‐sapphire devices.
Kidus Guye, Davide Orlandini, Seungheon Shin, Andy Allerman, Damena Agonafer, Siddharth Rajan, Samuel Graham   +6 more
wiley   +1 more source

Effect of X-ray irradiation on threshold voltage of AlGaN/GaN HEMTs with p-GaN and MIS Gates

Nanotechnology and Precision Engineering, 2020
Commercially available AlGaN/GaN high-electron-mobility transistors (HEMTs) are beginning to enter the public scene from a range of suppliers. Based on previous studies, commercial GaN-based electronics are expected to be tolerant to different types of ...
Yongle Qi, Denggui Wang, Jianjun Zhou, Kai Zhang, Yuechan Kong, Suzhen Wu, Tangsheng Chen   +6 more
doaj   +1 more source

Machine Learning Interatomic Potentials for Energy Materials: Architectures, Training Strategies, and Applications

Advanced Energy Materials, EarlyView.
Machine learning interatomic potentials bridge quantum accuracy and computational efficiency for materials discovery. Architectures from Gaussian process regression to equivariant graph neural networks, training strategies including active learning and foundation models, and applications in solid‐state electrolytes, batteries, electrocatalysts ...
In Kee Park, Saeed Pourasad, Jinhong Mun, Arunkumar Chitteth Rajan, Tae Hyeon Park, Anand Rohit, Mohammad Zafari, Tan‐Lien Pham, Eunjae Jung, Bonseung Koo, Miran Ha, Gi Beom Sim, Hyun Gyu Park, Won Woong Choi, Kwanghyeon Jo, Soohaeng Yoo Willow, David ChangMo Yang, Chang Woo Myung, Geunsik Lee, Kwang S. Kim   +19 more
wiley   +1 more source

Analytical Switching Loss Model for GaN Gate Injection Transistors

IEEE Open Journal of Power Electronics
Gallium nitride (GaN) high electron mobility transistors (HEMTs) are increasingly adopted in highly efficient power converters. In the design and optimization of GaN-based converters, accurate analytical models with low computational effort are required ...
Ruida Zhang, Jurgen Biela
doaj   +1 more source

Dynamic Control of AlGaN/GaN HEMT Characteristics by Implementation of a p-GaN Body-Diode-Based Back-Gate

IEEE Journal of the Electron Devices Society, 2019
We report on the implementation of dynamic body-bias technique to improve the performance of AlGaN/GaN high electron mobility transistors (HEMTs) with the successful integration of body-diode.
Isra Mahaboob, Michael Yakimov, Kasey Hogan, Emma Rocco, Sean Tozier, F. Shahedipour-Sandvik   +5 more
doaj   +1 more source

Farmers’ Protests in Germany: Media Coverage and Types of Bias

Agribusiness, EarlyView.
ABSTRACT The German farmers’ protests of 2024 sparked widespread media coverage and public debate. Yet, media coverage was not always positive, reflecting the media's attention‐seeking and selective focus. Occurrences of farmers blocking media outlets reflected distrust in how their concerns were portrayed.
Felix Schlichte, Doris Läpple
wiley   +1 more source