Results 61 to 70 of about 43,262 (231)

The Evolution of Aerosol Jet Printing, A Review: Enhancing Material Versatility and Improvements for Next‐Generation Applications

Advanced Materials Technologies, EarlyView.
Aerosol Jet Printing (AJP) has emerged as a versatile additive manufacturing technique for high‐resolution, conformal, and multi‐material printing. This review highlights advances in printable materials, substrate compatibility, post‐processing, characterization, and process innovations, while critically discussing current challenges and future ...
Chandrachur Chatterjee, Rocco Lupoi, Michael J. Gibbons   +2 more
wiley   +1 more source

High‐Performance Piezoelectric Nanogenerators Based on Wurtzite BeO Nanowire Arrays

Advanced Materials Technologies, EarlyView.
This study demonstrates high‐performance piezoelectric nanogenerators based on 1D BeO nanowire arrays. The BeO nanowires exhibit a high piezoelectric coefficient (∼15.8 pm V−1) and deliver an output voltage of ∼26.1 V and power density of ∼0.32 µW cm−2.
Yoonseo Jang, Jihyeon Park, Seoyeah Oh, Jonghyun Bae, Prakash R. Sultane, Christopher W. Bielawski, Jiwon Kim, Jungwoo Oh   +7 more
wiley   +1 more source

Quasi-Normally-Off AlGaN/GaN HEMTs With SiNₓ Stress Liner and Comb Gate for Power Electronics Applications

IEEE Journal of the Electron Devices Society, 2020
Recess processes for the fabrication of normally-off GaN HEMTs generally compromise devices’ on-state performance. In this work, recess-free quasi-normally-off GaN HEMTs with a threshold voltage of 0.24 V is realized by local control of two ...
Wei-Chih Cheng, Fanming Zeng, Minghao He, Qing Wang, Mansun Chan, Hongyu Yu   +5 more
doaj   +1 more source

Mono‐ and Bilayer MoS2 Photodetectors: High‐Performance Broadband AC Readout With Color‐Selective Noise Suppression

Advanced Optical Materials, EarlyView.
Mono‐ and bilayer MoS2 photodetectors enable wavelength‐selective AC photoresponse and optically driven capacitance modulation under visible illumination. Green excitation produces the strongest cumulative capacitive response, consistent with trap‐mediated charge accumulation at mono/bilayer and metal–MoS2 interfaces.
Pegah Zandi, Mengqi Fang, Arindam Phani, Muhammad Toyabur Rahman, Eui‐Hyeok Yang, Seonghwan Kim   +5 more
wiley   +1 more source

SiN/in-situ-GaON Staggered Gate Stack on p-GaN for Enhanced Stability in Buried-Channel GaN p-FETs

, 2021
GaN-based complementary logic (CL) integrated circuits (ICs) for the prospective power integration have been demonstrated on the commercial p-GaN gate power HEMT (high-electron-mobility transistor) platform.
Tao Chen, Zheng, Zheyang, Ng, Yat Hon, Song, Wenjie, Wenjie Song, Zhang, Li, Chen, Tao, Li Zhang, Cheng, Yan, Kevin J. Chen, Zheyang Zheng, Yat Hon Ng, Feng, Sirui, Chen, Kevin J., Yan Cheng, Sirui Feng   +15 more
core   +1 more source

Learning Highly Dynamic Skills Transition for Quadruped Jumping Through Constrained Space

Advanced Robotics Research, EarlyView.
A quadruped robot masters dynamic jumps through constrained spaces with animal‐inspired moves and intelligent vision control. This hierarchical learning approach combines imitation of biological agility with real‐time trajectory planning. Although legged animals are capable of performing explosive motions while traversing confined spaces, replicating ...
Zeren Luo, Jiahui Zhang, Yimin Han, Ji Ma, Minghao Lu, Ioannis Havoutis, Peng Lu   +6 more
wiley   +1 more source

Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate

Micromachines
This work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate.
Zhanfei Han, Xiangdong Li, Hongyue Wang, Yuebo Liu, Weitao Yang, Zesheng Lv, Meng Wang, Shuzhen You, Jincheng Zhang, Yue Hao   +9 more
doaj   +1 more source

1 μm gate length, In_0.75Ga_0.25As channel, thin body n-MOSFET on InP substrate with transconductance of 737μS/μm [PDF]

, 2008
The first demonstration of implant-free, flatband-mode In_0.75Ga_0.25As channel n-MOSFETs is reported. These 1 μm gate length MOSFETs, fabricated on a structure with average mobility of 7720 cm<sup ...
Moran, D.A.J., Ignatova, O., Asenov, A., Passlack, M., Li, X., Thayne, I.G., Droopad, R., Zhou, H., Fejes, P., Thoms, S., Rajagopalan, K., Hill, R.J.W., Macintyre, D.   +12 more
core   +1 more source

Sustainable Materials Design With Multi‐Modal Artificial Intelligence

Advanced Science, EarlyView.
Critical mineral scarcity, high embodied carbon, and persistent pollution from materials processing intensify the need for sustainable materials design. This review frames the problem as multi‐objective optimization under heterogeneous, high‐dimensional evidence and highlights multi‐modal AI as an enabling pathway.
Tianyi Xu, Tianshuo Wei, Yan Ge, Bo Peng, Yue Li, Maolin Wang, Peng Wen, Chao Yang, Ye Wei   +8 more
wiley   +1 more source

Dynamic Behavior Improvement of Normally-Off p-GaN High-Electron-Mobility Transistor Through a Low-Temperature Microwave Annealing Process

IEEE Journal of the Electron Devices Society, 2019
The surface morphology optimization of ohmic contacts and the Mg out-diffusion suppression of normally off p-GaN gate high-electron-mobility transistors (HEMTs) continue to be challenges in the power electronics industry in terms of the high-frequency ...
Hsien-Chin Chiu, Chia-Hao Liu, Yi-Sheng Chang, Hsuan-Ling Kao, Rong Xuan, Chih-Wei Hu, Feng-Tso Chien   +6 more
doaj   +1 more source