Results 61 to 70 of about 29,909,859 (245)
Design Optimization of a New Nanostructured P-GaN Gate for Normally-off GaN HEMTs
, 2022 Best Paper AwardInternational audienceA new AlGaN/GaN heterostructure is proposed to achieve a normally-off behavior for GaN HEMTs. It relies on multiple P-GaN wells epitaxial regrowth along the gate.
Patrick Austin +11 more
core +1 more source
IEEE Journal of the Electron Devices Society, 2020 Recess processes for the fabrication of normally-off GaN HEMTs generally compromise devices’ on-state performance. In this work, recess-free quasi-normally-off GaN HEMTs with a threshold voltage of 0.24 V is realized by local control of two ...
Wei-Chih Cheng +5 more
doaj +1 more source
Photonic‐Enabled Energy‐Efficient Transparent Neuromorphic Computing Devices: A Review
Advanced Science, EarlyView.Transparent photonic neuromorphic computing devices merge optics and brain‐inspired computing to overcome von Neumann bottlenecks with ultrafast, low‐energy processing. By exploiting transparent oxides, 2D materials, phase‐change materials, and hybrid heterostructures, these platforms enable photonic synapses, memory, and logic for see‐through edge ...
Shuvaraj Ghosh +8 more
wiley +1 more source
Angewandte Chemie, EarlyView.Light activation allows spatiotemporal control over materials, yet converting low‐energy red‐light excitation into chemically responsive electronic function remains challenging. Here we show that squaraine‐sensitized TiO2 domains embedded in single‐walled carbon nanotube networks generate a red‐light‐gated charge‐transfer state that reacts with O2 ...
Lionel Wettstein +6 more
wiley +2 more sources
Advanced Science, EarlyView.Energy‐harvesting‐integrated sensors couple ambient energy conversion with sensing, processing, and wireless communication. This review organizes recent progress through integration architectures and operating principles, revisiting co‐packaged, monolithic, and co‐functional designs together with always‐on, event‐driven, and multi‐modal sensing modes ...
Taehyun Park +5 more
wiley +1 more source
Gate-geometry Dependence of Enhancement-mode p-GaN Gate High Electron Mobility Transistors
, 2022 While GaN-based transistors for power electronics have in many situations demonstrated technological superiority over conventional Si based devices, the development of GaN power electronics has only scratched the surface of the possibilities that lie ...
Lee, Ethan Sukrae
core
Recessed and P-GaN regrowth gate development for normally-off AlGaN/GaN HEMTs
, 2020 International audienceA new normally-off AlGaN/GaN HEMT structure is proposed. The regrowth of a P-GaN layer on the AlGaN/GaN heterostructure after the gate recess allows the achievement of the enhancement mode.
Frayssinet, Éric +7 more
core +4 more sources
DeepLNM: A Multimodal Model for Predicting Lymph Node Metastasis in Colorectal Cancer
Advanced Science, EarlyView.Traditional diagnosis may miss positive LNM cases, and pathologists face a workload; therefore, we develop DeepLNM, a multimodal model that predicts lymph node metastasis in colorectal cancer from H&E WSIs, CT images, and text. DeepLNM is robust across internal, external, and prospective cohorts and, in a user study, improves diagnostic accuracy while ...
Zhengyu Zhang +24 more
wiley +1 more source
IEEE Journal of the Electron Devices Society, 2019 The surface morphology optimization of ohmic contacts and the Mg out-diffusion suppression of normally off p-GaN gate high-electron-mobility transistors (HEMTs) continue to be challenges in the power electronics industry in terms of the high-frequency ...
Hsien-Chin Chiu +6 more
doaj +1 more source
Physics‐Guided Multi‐Channel Restoration for Efficient and Accurate Atomic Force Microscopy Imaging
Advanced Science, EarlyView.Schematic figure of restoring noisy atomic force micrscopy (AFM) image via physics‐guided multi‐channel restoration. The lighter neural network models with multiple‐channel input from auxiliary signals outperforms heavier model with single‐channel input.
Jaeuk Sung +13 more
wiley +1 more source