Results 11 to 20 of about 29,909,859 (245)

Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs [PDF]

Applied Physics Letters, 2022
In this Letter, we experimentally investigate the impact of gate geometry on forward operation of Schottky-gate p-GaN high electron mobility transistors (HEMTs). In particular, we analyze devices with changing gate-metal/p-GaN junction area and p-GaN/AlGaN/GaN heterostructure area in the linear regime. These devices exhibit unique threshold voltage and
Ethan S. Lee, Jungwoo Joh, Dong Seup Lee, Jesús A. del Alamo   +3 more
openaire   +3 more sources

Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

Crystals, 2020
The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated.
Chia-Hao Liu, Hsien-Chin Chiu, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Kuang-Po Hsueh   +5 more
doaj   +2 more sources

Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate

Micromachines
This work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate.
Zhanfei Han, Xiangdong Li, Hongyue Wang, Yuebo Liu, Weitao Yang, Zesheng Lv, Meng Wang, Shuzhen You, Jincheng Zhang, Yue Hao   +9 more
doaj   +2 more sources

Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile [PDF]

IEEE Transactions on Electron Devices
The forward bias gate leakage current and forward gate breakdown voltage are important properties of p-GaN gate high-electron-mobility transistors (HEMTs). An engineered doping profile in the p-GaN layer results in a higher gate breakdown voltage and a lower forward bias gate leakage current.
Mojtaba Alaei, Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert, Benoit Bakeroot   +5 more
openaire   +3 more sources

Gate reliability enhancement of p-GaN gate HEMTs with oxygen compensation technique

Applied Physics Express
Improved p -GaN gate reliability is achieved through a simple oxygen compensation technique (OCT), which involves oxygen plasma treatment after gate opening and subsequential wet etching.
Chengcai Wang, Junting Chen, Zuoheng Jiang, Haohao Chen   +3 more
doaj   +2 more sources

P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime [PDF]

IEEE Electron Device Letters
In this letter, we report an approach to improve the forward bias gate reliability of Schottky gate p-GaN HEMTs. In particular, a gate layout solution, namely Gate Within Active Area (GWA), aimed at improving the high-temperature time to failure (TTF), is proposed and validated. This solution allows to avoid the exposure of the gate finger (p-GaN/metal)
A. N. Tallarico, M. Millesimo, M. Borga, B. Bakeroot, N. Posthuma, T. Cosnier, S. Decoutere, E. Sangiorgi, C. Fiegna   +8 more
openaire   +3 more sources

Recovery of drain-induced threshold voltage shift by positive gate bias in GaN power HEMTs with p-GaN gate [PDF]

Applied Physics Express
We demonstrate that exposure to positive gate bias can favor a fast recovery of the threshold voltage variation induced by off-state stress, in p-GaN gate high electron mobility transistors. Two process splits were investigated, having different Schottky
D. Favero, C. De Santi, A. Nardo, A. Dixit, P. Vanmeerbeek, A. Stockman, M. Tack, G. Meneghesso, E. Zanoni, M. Meneghini   +9 more
doaj   +2 more sources

Investigation on Stability of p-GaN HEMTs With an Indium–Tin–Oxide Gate Under Forward Gate Bias

IEEE Journal of the Electron Devices Society, 2021
In this study, p-GaN HEMTs with an indium-tin-oxide (ITO) electrode fabricated on the two different Mg concentration, i.e., $1 \mathbf {\mathrm {\times }} 10 ^{19}$ cm −3 and $8 \mathbf {\mathrm {\times }} 10 ^{19\,\,}$ cm −3,in p-GaN ...
Chih-Yao Chang, Yao-Luen Shen, Ching-Yao Wang, Shun-Wei Tang, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang   +7 more
doaj   +1 more source

Normally-Off p-GaN Gate High-Electron-Mobility Transistors with the Air-Bridge Source-Connection Fabricated Using the Direct Laser Writing Grayscale Photolithography Technology

Crystals, 2023
In this work, we used the Direct Laser Writing Grayscale Photolithography technology to fabricate a normally-off p-GaN gate high-electron-mobility transistor with the air-bridge source-connection.
Yujian Zhang, Guojian Ding, Fangzhou Wang, Ping Yu, Qi Feng, Cheng Yu, Junxian He, Xiaohui Wang, Wenjun Xu, Miao He, Yang Wang, Wanjun Chen, Haiqiang Jia, Hong Chen   +13 more
doaj   +1 more source

Gate-Tunable Polarity-Reconfigurable Photovoltaic Response With Dual Linearity in NbS₃/WSe₂ Heterostructures for In-Sensor Image Processing. [PDF]

Adv Sci (Weinh)
An NbS3/WSe2 van der Waals heterostructure realizes a continuously gate‐tunable self‐powered photovoltaic response through interfacial band‐alignment modulation and reversible built‐in electric‐field switching. The short‐circuit photocurrent scales linearly with incident power density, while short‐circuit photoresponsivity varies linearly with gate ...
Liu J, Xie J, Hao Q, Hu Y, He Z, Liu H, Lin D, Gan H, Tu Y, Zhang W.   +9 more
europepmc   +2 more sources