Results 11 to 20 of about 43,262 (231)

Determination of the Gate Breakdown Mechanisms in p-GaN Gate HEMTs by Multiple-Gate-Sweep Measurements [PDF]

IEEE Transactions on Electron Devices, 2021
In this work, we studied the gate breakdown mechanisms of p-GaN gate AlGaN/GaN HEMTs by a novel multiple-gate-sweep-based method. For the first time, three different breakdown mechanisms were observed and identified separately in the same devices: the metal/p-GaN junction breakdown, the p-GaN/AlGaN/GaN junction breakdown, and the passivation related ...
Guangnan Zhou, Qing Wang, Lingli Jiang   +2 more
exaly   +4 more sources

Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate [PDF]

Micromachines, 2023
The channel temperature distribution and breakdown points are difficult to monitor for the traditional p-GaN gate HEMTs under high power stress, because the metal gate blocks the light.
Zhanfei Han, Xiangdong Li, Hongyue Wang, Jiahui Yuan, Junbo Wang, Meng Wang, Weitao Yang, Shuzhen You, Jingjing Chang, Jincheng Zhang, Yue Hao   +10 more
doaj   +2 more sources

Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors [PDF]

Micromachines, 2023
In this work, we investigated the degradation of the p-GaN gate stack induced by the forward gate voltage stress in normally off AlGaN/GaN high electron mobility transistors (HEMTs) with Schottky-type p-GaN gate. The gate stack degradations of p-GaN gate
Myeongsu Chae, Hyungtak Kim
doaj   +2 more sources

Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization [PDF]

Micromachines, 2023
The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in this paper, we precisely monitored the shifting process of the ...
Xiangdong Li, Meng Wang, Jincheng Zhang, Rui Gao, Hongyue Wang, Weitao Yang, Jiahui Yuan, Shuzhen You, Jingjing Chang, Zhihong Liu, Yue Hao   +10 more
doaj   +2 more sources

Surface-Potential-Based Compact Modeling of p-GaN Gate HEMTs. [PDF]

Micromachines (Basel), 2021
We propose a surface potential (SP)-based compact model of p-GaN gate high electron mobility transistors (HEMTs) which solves the Poisson equation. The model includes all possible charges in the GaN channel layer, including the unintended Mg doping density caused by out-diffusion.
Wang J, Chen Z, You S, Bakeroot B, Liu J, Decoutere S.   +5 more
europepmc   +6 more sources

Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs [PDF]

Applied Physics Letters, 2022
In this Letter, we experimentally investigate the impact of gate geometry on forward operation of Schottky-gate p-GaN high electron mobility transistors (HEMTs). In particular, we analyze devices with changing gate-metal/p-GaN junction area and p-GaN/AlGaN/GaN heterostructure area in the linear regime. These devices exhibit unique threshold voltage and
Ethan S. Lee, Jungwoo Joh, Dong Seup Lee, Jesús A. del Alamo   +3 more
openaire   +2 more sources

A Novel Atomic-Level Post-Etch-Surface-Reinforcement Process for High-Performance p-GaN Gate HEMTs Fabrication [PDF]

Nanomaterials, 2023
A novel atomic-level post-etch-surface-reinforcement (PESR) process is developed to recover the p-GaN etching induced damage region for high performance p-GaN gate HEMTs fabrication.
Luyu Wang, Penghao Zhang, Kaiyue Zhu, Qiang Wang, Maolin Pan, Xin Sun, Ziqiang Huang, Kun Chen, Yannan Yang, Xinling Xie, Hai Huang, Xin Hu, Saisheng Xu, Chunlei Wu, Chen Wang, Min Xu, David Wei Zhang   +16 more
doaj   +2 more sources

Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

Crystals, 2020
The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated.
Chia-Hao Liu, Hsien-Chin Chiu, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Kuang-Po Hsueh   +5 more
doaj   +2 more sources

Gate Current in p-GaN Gate HEMTs as a Channel Temperature Sensitive Parameter: A Comparative Study between Schottky- and Ohmic-Gate GaN HEMTs

Energies, 2021
In this work, a comparison between the gate-driving requirements of p-GaN HEMTs with gate contact of Schottky and Ohmic type is presented. Furthermore, the presence of a gate current of different magnitude is experimentally verified for both types of ...
Alessandro Borghese, Michele Riccio, Luca Maresca   +2 more
exaly   +3 more sources

Reliability of p-GaN Gate HEMTs in Reverse Conduction

IEEE Transactions on Electron Devices, 2021
Synchronous buck converter comprises a low side (LS) and a high side (HS) switch, where the HS switch works in the first quadrant (forward conduction) whereas the LS switch works in the third quadrant (reverse conduction). However, the reliability of the p-GaN gate high electron mobility transistor (HEMT) in reverse conduction is unclear. In this work,
Cingu, Deepthi, Li, Xiangdong, Bakeroot, Benoit, Amirifar, Nooshin, Geens, Karen, Jacobs, Kristof J.P., Zhao, Ming, You, Shuzhen, Groeseneken, Guido, Decoutere, Stefaan   +9 more
openaire   +4 more sources