Results 11 to 20 of about 104,754 (247)

On-Wafer Gate Screening Test for Improved Pre-Reliability in p-GaN HEMTs [PDF]

Micromachines
In this paper, preliminary gate reliability of p-GaN HEMTs under high positive gate bias is studied. Gate robustness is of great interest both from an academic and industrial point of view; in fact, different tests and models can be explored to estimate ...
Giovanni Giorgino, Cristina Miccoli, Marcello Cioni, Santo Reina, Tariq Wakrim, Virgil Guillon, Nossikpendou Yves Sama, Pauline Gaillard, Mohammed Zeghouane, Hyon-Ju Chauveau, Maria Eloisa Castagna, Aurore Constant, Ferdinando Iucolano, Alessandro Chini   +13 more
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Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs [PDF]

Applied Physics Letters, 2022
In this Letter, we experimentally investigate the impact of gate geometry on forward operation of Schottky-gate p-GaN high electron mobility transistors (HEMTs). In particular, we analyze devices with changing gate-metal/p-GaN junction area and p-GaN/AlGaN/GaN heterostructure area in the linear regime. These devices exhibit unique threshold voltage and
Ethan S. Lee, Jungwoo Joh, Dong Seup Lee, Jesús A. del Alamo   +3 more
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Investigation on Stability of p-GaN HEMTs With an Indium–Tin–Oxide Gate Under Forward Gate Bias

IEEE Journal of the Electron Devices Society, 2021
In this study, p-GaN HEMTs with an indium-tin-oxide (ITO) electrode fabricated on the two different Mg concentration, i.e., $1 \mathbf {\mathrm {\times }} 10 ^{19}$ cm −3 and $8 \mathbf {\mathrm {\times }} 10 ^{19\,\,}$ cm −3,in p-GaN ...
Chih-Yao Chang, Yao-Luen Shen, Ching-Yao Wang, Shun-Wei Tang, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang   +7 more
doaj   +1 more source

Normally-Off p-GaN Gate High-Electron-Mobility Transistors with the Air-Bridge Source-Connection Fabricated Using the Direct Laser Writing Grayscale Photolithography Technology

Crystals, 2023
In this work, we used the Direct Laser Writing Grayscale Photolithography technology to fabricate a normally-off p-GaN gate high-electron-mobility transistor with the air-bridge source-connection.
Yujian Zhang, Guojian Ding, Fangzhou Wang, Ping Yu, Qi Feng, Cheng Yu, Junxian He, Xiaohui Wang, Wenjun Xu, Miao He, Yang Wang, Wanjun Chen, Haiqiang Jia, Hong Chen   +13 more
doaj   +1 more source

Analysis of Instability Behavior and Mechanism of E-Mode GaN Power HEMT with p-GaN Gate under Off-State Gate Bias Stress

Energies, 2021
In this study, we investigate the degradation characteristics of E-mode GaN High Electron Mobility Transistors (HEMTs) with a p-GaN gate by designed pulsed and prolonged negative gate (VGS) bias stress.
Surya Elangovan, Edward Yi Chang, Stone Cheng   +2 more
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Recent Developments and Prospects of Fully Recessed MIS Gate Structures for GaN on Si Power Transistors

Energies, 2023
For high electron mobility transistors (HEMTs) power transistors based on AlGaN/GaN heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two dimensional electron gas (2-DEG) and achieve a normally-OFF behavior.
Pedro Fernandes Paes Pinto Rocha, Laura Vauche, Patricia Pimenta-Barros, Simon Ruel, René Escoffier, Julien Buckley   +5 more
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Low Gate Lag Normally-Off p-GaN/AlGaN/GaN High Electron Mobility Transistor with Zirconium Gate Metal

Crystals, 2020
The impact of gate metal on the leakage current and breakdown voltage of normally-off p-GaN gate high-electron-mobility-transistor (HEMT) with nickel (Ni) and zirconium (Zr) metals were studied and investigated.
Chia-Hao Liu, Hsien-Chin Chiu, Chong-Rong Huang, Kuo-Jen Chang, Chih-Tien Chen, Kuang-Po Hsueh   +5 more
doaj   +1 more source

Formation of ultra-high-resistance Au/Ti/p-GaN junctions and the applications in AlGaN/GaN HEMTs

AIP Advances, 2021
We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/p-GaN Schottky junctions annealed within a certain annealing condition window (600–700 °C, 1–4 min).
Guangnan Zhou, Yang Jiang, Gaiying Yang, Qing Wang, Mengya Fan, Lingli Jiang, Hongyu Yu, Guangrui Xia   +7 more
doaj   +1 more source

Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering

, 2021
We present a novel p-GaN gate HEMT structure with reduced hole concentration near the Schottky interface by doping engineering in MOCVD, which aims at lowering the electric field across the gate. By employing an additional unintentionally doped GaN layer, the gate leakage current is suppressed and the gate breakdown voltage is boosted from 10.6 to 14.6
Zhou, Guangnan, Zeng, Fanming, Gao, Rongyu, Wang, Qing, Cheng, Kai, Xia, Guangrui, Yu, Hongyu   +6 more
openaire   +2 more sources

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al₂O₃/AlN Composite Gate Insulator

Membranes, 2021
A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated.
Hsien-Chin Chiu, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, Feng-Tso Chien   +7 more
doaj   +1 more source