Results 21 to 30 of about 29,909,859 (245)
Energies, 2021 In this study, we investigate the degradation characteristics of E-mode GaN High Electron Mobility Transistors (HEMTs) with a p-GaN gate by designed pulsed and prolonged negative gate (VGS) bias stress.
Surya Elangovan +2 more
doaj +1 more source
Surface-Potential-Based Compact Model for the Gate Current of p-GaN Gate HEMTs [PDF]
IEEE Transactions on Electron Devices, 2020 The gate leakage current of p-GaN gate HEMTs is modeled based on surface potential calculations. The model accurately describes the bias and temperature dependence of the gate leakage. Thermionic emission is the main mechanism of the gate current in forward bias operation while hopping transport component is the main mechanism of gate current in ...
Jie Wang +7 more
openaire +2 more sources
Formation of ultra-high-resistance Au/Ti/p-GaN junctions and the applications in AlGaN/GaN HEMTs
AIP Advances, 2021 We report a dramatic current reduction, or a resistance increase, by a few orders of magnitude of two common-anode Au/Ti/p-GaN Schottky junctions annealed within a certain annealing condition window (600–700 °C, 1–4 min).
Guangnan Zhou +7 more
doaj +1 more source
Energies, 2023 For high electron mobility transistors (HEMTs) power transistors based on AlGaN/GaN heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two dimensional electron gas (2-DEG) and achieve a normally-OFF behavior.
Pedro Fernandes Paes Pinto Rocha +5 more
doaj +1 more source
Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering
, 2021 We present a novel p-GaN gate HEMT structure with reduced hole concentration near the Schottky interface by doping engineering in MOCVD, which aims at lowering the electric field across the gate. By employing an additional unintentionally doped GaN layer, the gate leakage current is suppressed and the gate breakdown voltage is boosted from 10.6 to 14.6
Zhou, Guangnan +6 more
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Threshold voltage instability by charge trapping effects in the gate region of p-GaN HEMTs [PDF]
, 2022 In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transistors (HEMTs) has been investigated by monitoring the gate current density during device on-state.
Alessandrino, Mario Santi +17 more
core +1 more source
Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al2O3/AlN Composite Gate Insulator
Membranes, 2021 A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated.
Hsien-Chin Chiu +7 more
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On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs
IEEE Journal of the Electron Devices Society, 2021 ON-state conductance properties of vertical GaN n-channel trench MISFETs manufactured on different GaN substrates and having different gate trench orientations are studied up to 200 °C ambient temperature.
Eldad Bahat Treidel +10 more
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Reliability of p-GaN Gate HEMTs in Reverse Conduction
IEEE Transactions on Electron Devices, 2021 Synchronous buck converter comprises a low side (LS) and a high side (HS) switch, where the HS switch works in the first quadrant (forward conduction) whereas the LS switch works in the third quadrant (reverse conduction). However, the reliability of the p-GaN gate high electron mobility transistor (HEMT) in reverse conduction is unclear. In this work,
Cingu, Deepthi +9 more
openaire +3 more sources
Results in Physics, 2021 In this work, normally-off p-channel and n-channel heterojunction field-effect transistors (HFETs) were fabricated based on a p-GaN gate Al0.2Ga0.8N/Al0.05Ga0.95N HFET platform.
Weihang Zhang +7 more
doaj +1 more source