Results 21 to 30 of about 104,754 (247)

On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs

IEEE Journal of the Electron Devices Society, 2021
ON-state conductance properties of vertical GaN n-channel trench MISFETs manufactured on different GaN substrates and having different gate trench orientations are studied up to 200 °C ambient temperature.
Eldad Bahat Treidel, Oliver Hilt, Veit Hoffmann, Frank Brunner, Nicole Bickel, Andreas Thies, Kornelius Tetzner, Hassan Gargouri, Christian Huber, Konstanty Donimirski, Joachim Wurfl   +10 more
doaj   +1 more source

Investigation of normally-off GaN-based p-channel and n-channel heterojunction field-effect transistors for monolithic integration

Results in Physics, 2021
In this work, normally-off p-channel and n-channel heterojunction field-effect transistors (HFETs) were fabricated based on a p-GaN gate Al0.2Ga0.8N/Al0.05Ga0.95N HFET platform.
Weihang Zhang, Xi Liu, Liyu Fu, Ren Huang, Shenglei Zhao, Jincheng Zhang, Jinfeng Zhang, Yue Hao   +7 more
doaj   +1 more source

High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs

IEEE Transactions on Electron Devices, 2021
In this article, we present an in-depth high-temperature analysis of the long-term gate reliability in GaN-based power high-electron-mobility transistors (HEMTs) with p-type gate. Three different isolation process options, aimed at improving the time-dependent gate breakdown (TDGB), are proposed and compared by means of constant voltage stress tests ...
M. Millesimo, C. Fiegna, N. Posthuma, M. Borga, B. Bakeroot, S. Decoutere, A. N. Tallarico   +6 more
openaire   +2 more sources

Gate stability of GaN-Based HEMTs with P-Type Gate [PDF]

, 2016
status ...
Decoutere, S., Marcon, D., Meneghesso, Gaudenzio, Meneghini, Matteo, Posthuma, N., Rizzato, V., Rossetto, Isabella, Stoffels, S., Van Hove, M., Wu, T. L., Zanoni, Enrico   +10 more
core   +2 more sources

An E-mode p-channel GaN MOSHFET for a CMOS compatible PMIC [PDF]

, 2017
The operation principle of a low power E-mode p-channel GaN MOSHFET is explained via TCAD simulations. The challenges of achieving negative threshold voltage with the scaling of gate length are addressed by adjusting the mole fraction of an AlGaN cap ...
De Souza, M.M., Kumar, A.
core   +1 more source

Surface-Potential-Based Compact Model for the Gate Current of p-GaN Gate HEMTs [PDF]

IEEE Transactions on Electron Devices, 2020
The gate leakage current of p-GaN gate HEMTs is modeled based on surface potential calculations. The model accurately describes the bias and temperature dependence of the gate leakage. Thermionic emission is the main mechanism of the gate current in forward bias operation while hopping transport component is the main mechanism of gate current in ...
Jie Wang, Zhanfei Chen, Shuzhen You, Wenyong Zhou, Benoit Bakeroot, Jun Liu, Lingling Sun, Stefaan Decoutere   +7 more
openaire   +2 more sources

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

Energies, 2017
GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field.
Matteo Meneghini, Oliver Hilt, Joachim Wuerfl, Gaudenzio Meneghesso   +3 more
doaj   +1 more source

Reduction of oscillations in a GaN bridge leg using active gate driving with sub-ns resolution, arbitrary gate-impedance patterns [PDF]

, 2017
Active gate driving provides an opportunity to reduce EMI in power electronic circuits. Whilst it has been demonstrated for MOS-gated silicon power semiconductor devices, reported advanced gate driving in wide-bandgap devices has been limited to a single
Dalton, Jeremy, Dymond, Harry C P, Hollis, Simon, Liu, Dawei, McNeill, Neville, Pamunuwa, Dinesh, Stark, Bernard, Wang, Jianjing   +7 more
core   +1 more source

Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors

Micromachines, 2023
As wide bandgap semiconductors, gallium nitride (GaN) lateral high-electron-mobility transistors (HEMTs) possess high breakdown voltage, low resistance and high frequency performance.
Zhongxu Wang, Jiao Nan, Zhiwen Tian, Pei Liu, Yinhe Wu, Jincheng Zhang   +5 more
doaj   +1 more source

Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications

Crystals, 2023
The role of the magnesium (Mg) doping and its electrical activation on the off-state of p-GaN/AlGaN/GaN HEMTs has been investigated in this work. Firstly, the effect of different Mg doping profiles has been studied via the help of Technology Computer ...
Giovanni Giorgino, Giuseppe Greco, Maurizio Moschetti, Cristina Miccoli, Maria Eloisa Castagna, Cristina Tringali, Patrick Fiorenza, Fabrizio Roccaforte, Ferdinando Iucolano   +8 more
doaj   +1 more source