Results 21 to 30 of about 3,650 (215)

Improved Gate Reliability of p-GaN Gate HEMTs by Gate Doping Engineering

, 2021
We present a novel p-GaN gate HEMT structure with reduced hole concentration near the Schottky interface by doping engineering in MOCVD, which aims at lowering the electric field across the gate. By employing an additional unintentionally doped GaN layer, the gate leakage current is suppressed and the gate breakdown voltage is boosted from 10.6 to 14.6
Zhou, Guangnan, Zeng, Fanming, Gao, Rongyu, Wang, Qing, Cheng, Kai, Xia, Guangrui, Yu, Hongyu   +6 more
openaire   +2 more sources

Normally-Off p-GaN Gated AlGaN/GaN MIS-HEMTs with ALD-Grown Al₂O₃/AlN Composite Gate Insulator

Membranes, 2021
A metal–insulator–semiconductor p-type GaN gate high-electron-mobility transistor (MIS-HEMT) with an Al2O3/AlN gate insulator layer deposited through atomic layer deposition was investigated.
Hsien-Chin Chiu, Chia-Hao Liu, Chong-Rong Huang, Chi-Chuan Chiu, Hsiang-Chun Wang, Hsuan-Ling Kao, Shinn-Yn Lin, Feng-Tso Chien   +7 more
doaj   +1 more source

On the Conduction Properties of Vertical GaN n-Channel Trench MISFETs

IEEE Journal of the Electron Devices Society, 2021
ON-state conductance properties of vertical GaN n-channel trench MISFETs manufactured on different GaN substrates and having different gate trench orientations are studied up to 200 °C ambient temperature.
Eldad Bahat Treidel, Oliver Hilt, Veit Hoffmann, Frank Brunner, Nicole Bickel, Andreas Thies, Kornelius Tetzner, Hassan Gargouri, Christian Huber, Konstanty Donimirski, Joachim Wurfl   +10 more
doaj   +1 more source

Investigation of normally-off GaN-based p-channel and n-channel heterojunction field-effect transistors for monolithic integration

Results in Physics, 2021
In this work, normally-off p-channel and n-channel heterojunction field-effect transistors (HFETs) were fabricated based on a p-GaN gate Al0.2Ga0.8N/Al0.05Ga0.95N HFET platform.
Weihang Zhang, Xi Liu, Liyu Fu, Ren Huang, Shenglei Zhao, Jincheng Zhang, Jinfeng Zhang, Yue Hao   +7 more
doaj   +1 more source

Reliability of p-GaN Gate HEMTs in Reverse Conduction

IEEE Transactions on Electron Devices, 2021
Synchronous buck converter comprises a low side (LS) and a high side (HS) switch, where the HS switch works in the first quadrant (forward conduction) whereas the LS switch works in the third quadrant (reverse conduction). However, the reliability of the p-GaN gate high electron mobility transistor (HEMT) in reverse conduction is unclear. In this work,
Cingu, Deepthi, Li, Xiangdong, Bakeroot, Benoit, Amirifar, Nooshin, Geens, Karen, Jacobs, Kristof J.P., Zhao, Ming, You, Shuzhen, Groeseneken, Guido, Decoutere, Stefaan   +9 more
openaire   +3 more sources

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

Energies, 2017
GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field.
Matteo Meneghini, Oliver Hilt, Joachim Wuerfl, Gaudenzio Meneghesso   +3 more
doaj   +1 more source

Review on Main Gate Characteristics of P-Type GaN Gate High-Electron-Mobility Transistors

Micromachines, 2023
As wide bandgap semiconductors, gallium nitride (GaN) lateral high-electron-mobility transistors (HEMTs) possess high breakdown voltage, low resistance and high frequency performance.
Zhongxu Wang, Jiao Nan, Zhiwen Tian, Pei Liu, Yinhe Wu, Jincheng Zhang   +5 more
doaj   +1 more source

Study of Magnesium Activation Effect on Pinch-Off Voltage of Normally-Off p-GaN HEMTs for Power Applications

Crystals, 2023
The role of the magnesium (Mg) doping and its electrical activation on the off-state of p-GaN/AlGaN/GaN HEMTs has been investigated in this work. Firstly, the effect of different Mg doping profiles has been studied via the help of Technology Computer ...
Giovanni Giorgino, Giuseppe Greco, Maurizio Moschetti, Cristina Miccoli, Maria Eloisa Castagna, Cristina Tringali, Patrick Fiorenza, Fabrizio Roccaforte, Ferdinando Iucolano   +8 more
doaj   +1 more source

Enhancement of Breakdown Voltage in p-GaN Gate AlGaN/GaN HEMTs With a Stepped Hybrid GaN/AlN Buffer Layer

IEEE Journal of the Electron Devices Society, 2022
A novel p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) structure with a stepped hybrid GaN/AlN buffer layer (S-HEMT) is proposed and simulated by the Sentaurus TCAD in this paper.
Yuan Wang, Shengdong Hu, Jingwei Guo, Hao Wu, Tao Liu, Jie Jiang   +5 more
doaj   +1 more source

Breakdown enhancement and hot electrons mitigation for p-GaN gate HEMTs by electric field modulation

Results in Physics, 2023
In this article, an enhancement mode (E-mode) p-GaN gate AlGaN/GaN high electron mobility transistor (HEMT) with the novel strain technology (NST) has been proposed.
Jingyu Shen, Liang Jing, Ping Li, Hao Wu, Shengdong Hu   +4 more
doaj   +1 more source