Results 21 to 30 of about 43,262 (231)

Improved Threshold Voltage Stability of p-GaN Gate HEMTs Under Off-State Drain Stress Using p-NiO RESURF Terminal [PDF]

Micromachines
A comparative study was undertaken to examine the VTH stability of p-GaN gate high electron mobility transistors (HEMTs) without the p-NiO reduced surface field (RESURF) terminal and with the RESURF terminal under off-state drain voltage stress and ...
Jun Pan, Xiangru Ye, Ruixi Jiang, Ailin Miao, Fuxiang Miao, Zhiyi Mao, Yanghu Peng, Hui Guo, Jianming Lei   +8 more
doaj   +2 more sources

Optimization of Low-Voltage p-GaN Gate HEMTs for High-Efficiency Secondary Power Conversion [PDF]

Micromachines
The explosive demand for high-performance secondary power sources in artificial intelligence (AI) has brought significant opportunities for low-voltage GaN devices.
Lili Zhai, Xiangdong Li, Jian Ji, Lu Yu, Liang Chen, Yaoming Chen, Haonan Xia, Zhanfei Han, Junbo Wang, Xi Jiang, Song Yuan, Tao Zhang, Yue Hao, Jincheng Zhang   +13 more
doaj   +2 more sources

Extending Electrostatic Modeling for Schottky p-GaN Gate HEMTs: Uniform and Engineered p-GaN Doping

IEEE Transactions on Electron Devices
This article presents a comprehensive analytical framework for modeling p-GaN gate high-electron-mobility transistors (HEMTs) based on rigorous solution of the Poisson and Schrodinger equations. It focuses primarily on the calculation of the 2-D electron gas (2DEG), voltage variation across the junction (Delta V-j), and AlGaN barrier ( Delta V-b) for ...
Mojtaba Alaei, Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert, Benoit Bakeroot   +5 more
openaire   +3 more sources

Gate reliability enhancement of p-GaN gate HEMTs with oxygen compensation technique

Applied Physics Express
Improved p -GaN gate reliability is achieved through a simple oxygen compensation technique (OCT), which involves oxygen plasma treatment after gate opening and subsequential wet etching.
Chengcai Wang, Junting Chen, Zuoheng Jiang, Haohao Chen   +3 more
doaj   +2 more sources

Modeling Gate Leakage Current for p-GaN Gate HEMTs With Engineered Doping Profile [PDF]

IEEE Transactions on Electron Devices
The forward bias gate leakage current and forward gate breakdown voltage are important properties of p-GaN gate high-electron-mobility transistors (HEMTs). An engineered doping profile in the p-GaN layer results in a higher gate breakdown voltage and a lower forward bias gate leakage current.
Mojtaba Alaei, Matteo Borga, Elena Fabris, Stefaan Decoutere, Johan Lauwaert, Benoit Bakeroot   +5 more
openaire   +3 more sources

Recovery of drain-induced threshold voltage shift by positive gate bias in GaN power HEMTs with p-GaN gate [PDF]

Applied Physics Express
We demonstrate that exposure to positive gate bias can favor a fast recovery of the threshold voltage variation induced by off-state stress, in p-GaN gate high electron mobility transistors. Two process splits were investigated, having different Schottky
D. Favero, C. De Santi, A. Nardo, A. Dixit, P. Vanmeerbeek, A. Stockman, M. Tack, G. Meneghesso, E. Zanoni, M. Meneghini   +9 more
doaj   +2 more sources

P-GaN Gate HEMTs: A Solution to Improve the High-Temperature Gate Lifetime [PDF]

IEEE Electron Device Letters
In this letter, we report an approach to improve the forward bias gate reliability of Schottky gate p-GaN HEMTs. In particular, a gate layout solution, namely Gate Within Active Area (GWA), aimed at improving the high-temperature time to failure (TTF), is proposed and validated. This solution allows to avoid the exposure of the gate finger (p-GaN/metal)
A. N. Tallarico, M. Millesimo, M. Borga, B. Bakeroot, N. Posthuma, T. Cosnier, S. Decoutere, E. Sangiorgi, C. Fiegna   +8 more
openaire   +3 more sources

Electrical Characterization and Simulation of GaN-on-Si Pseudo-Vertical MOSFETs with Frequency-Dependent Gate C–V Investigation [PDF]

Micromachines
This work presents a comprehensive study of GaN-on-Si pseudo-vertical MOSFETs focusing on single-trench and multi-trench designs. Thanks to a gate-first process flow based on an Al2O3/TiN MOS stack, both fabricated devices exhibit promising transistor ...
Valentin Ackermann, Mohammed El Amrani, Blend Mohamad, Riadh Ben Abbes, Matthew Charles, Sebastien Cavalaglio, Manuel Manrique, Julien Buckley, Bassem Salem   +8 more
doaj   +2 more sources

Study on the Relationship Between Threshold Voltage Instability and Gate Leakage Current in p-GaN HEMTs

IEEE Journal of the Electron Devices Society
This work uncovers a temperature-dependent relationship between gate leakage current ( $\mathrm{I}_{\mathrm{G}}$ ) and threshold voltage shift ( $\Delta \mathrm{V}_{\mathrm{TH}}$ ) through an evaluation combining deep level transient spectroscopy (DLTS ...
Yifan Cui, Yang Jiang, Yutian Gan, Qiaoyu Hu, Qing Wang, Hongyu Yu   +5 more
doaj   +2 more sources

Investigation on Stability of p-GaN HEMTs With an Indium–Tin–Oxide Gate Under Forward Gate Bias

IEEE Journal of the Electron Devices Society, 2021
In this study, p-GaN HEMTs with an indium-tin-oxide (ITO) electrode fabricated on the two different Mg concentration, i.e., $1 \mathbf {\mathrm {\times }} 10 ^{19}$ cm −3 and $8 \mathbf {\mathrm {\times }} 10 ^{19\,\,}$ cm −3,in p-GaN ...
Chih-Yao Chang, Yao-Luen Shen, Ching-Yao Wang, Shun-Wei Tang, Tian-Li Wu, Wei-Hung Kuo, Suh-Fang Lin, Chih-Fang Huang   +7 more
doaj   +1 more source