Results 101 to 110 of about 4,002 (212)

Polarization‐Engineered GaN‐Based High‐Electron‐Mobility Transistors for High Power RF Applications

physica status solidi (a), Volume 222, Issue 23, December 2025.
Gallium nitride (GaN)‐based high‐electron‐mobility transistors with nonlinear polarization‐graded AlGaN barriers improve power handling and breakdown voltage by mitigating peak electric fields. technology computer‐aided design simulations show up to 8.8 W mm−1 output power and 2.2× breakdown enhancement without field plates, making this structure ideal
Yu‐En Jeng, Nivedhita Venkatesan, Pengcheng Xu, Weifeng Wu, Zhongtao Zhu, Patrick Fay   +5 more
wiley   +1 more source

Influence of AlxGa1−xN barrier layer thickness and p-GaN gate characteristics on the threshold voltage of p-GaN/AlGaN/GaN high electron mobility transistors

AIP Advances
In this research work, the pivotal role of threshold voltage (Vth) in the performance optimization of enhancement-mode (E-mode) AlGaN/GaN-based high-electron-mobility transistors (HEMTs) is explored.
Bang-zhi Xiao, Yin-shui He, Wen-bo Xiao
doaj   +1 more source

Meandering gate edges for breakdown voltage enhancement in AlGaN/GaN HEMTs

, 2019
In this letter, we report on a unique device design strategy for increasing the breakdown voltage and hence Baliga Figure of Merit (BFOM) of III-nitride HEMTs by engineering the gate edge towards the drain.
Dolmanan, Surani B., Kumar, Sandeep, Muralidharan, Rangarajan, Nath, Digbijoy N., Tripathy, Sudhiranjan   +4 more
core   +1 more source

Effects of N2 Plasma Pretreatment on the SiN Passivation of AlGaN/GaN HEMT [PDF]

, 2008
The impact of in situ low-power plasma pretreatment, prior to silicon-nitride (SiN) deposition, was investigated in AlGaN/GaN high-electron mobility transistors (HEMTs).
Braña, A.F., Calle Gómez, Fernando, Cuerdo Bragado, Roberto, González-Posada Flores, Fernando, Jiménez, A., Muñoz Merino, Elias, Romero Rojo, Fátima, Sánchez, José M.   +7 more
core   +2 more sources

Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation

IEEE Access
In this paper, we investigated an experimental analysis of the degradation caused by low dose rate irradiation in GaN-based high-electron-mobility transistors (HEMTs) with a p-type gate. Combined with experimental frequency-dependent conductance ( $\text{
Xiaolong Li, Xin Wang, Mohan Liu, Kunfeng Zhu, Guohua Shui, Qiwen Zheng, Jiangwei Cui, Wu Lu, Yudong Li, Qi Guo   +9 more
doaj   +1 more source

Self-Consistent C-V Characterization of Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET Incorporating Strain Effects

, 2012
We investigated Capacitance-Voltage (C-V) characteristics of the Depletion Mode Buried Channel InGaAs/InAs Quantum Well FET by using Self-Consistent method incorporating Quantum Mechanical (QM) effects.
Ahmed, Imtiaz, Alam, Md. Hasibul, Azim, Zubair Al, Chowdhury, Nadim, Khosru, Quazi Deen Mohd, Niaz, Iftikhar Ahmad   +5 more
core   +1 more source

Analytical Switching Loss Model for GaN Gate Injection Transistors

IEEE Open Journal of Power Electronics
Gallium nitride (GaN) high electron mobility transistors (HEMTs) are increasingly adopted in highly efficient power converters. In the design and optimization of GaN-based converters, accurate analytical models with low computational effort are required ...
Ruida Zhang, Jurgen Biela
doaj   +1 more source

Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs. [PDF]

Micromachines (Basel), 2023
Langpoklakpam C, Liu AC, You NJ, Kao MH, Huang WH, Shen CH, Tzou J, Kuo HC, Shieh JM.   +8 more
europepmc   +1 more source

Influence of polarization coulomb field scattering on the subthreshold swing in E-mode p-GaN/AlGaN/GaN HEMTs

Journal of Physics Communications
In the present study, p-GaN/AlGaN/GaN HEMTs treated with hydrogen plasma passivation were fabricated. Capacitance–voltage (C-V) and current–voltage(I-V) characteristics of these devices were subsequently measured.
Heyu Liu, Mingyan Wang, Heng Zhou, Guohao Yu, Honghuan Guo, Baoshun Zhang, Peng Cui, Zhaojun Lin   +7 more
doaj   +1 more source

Highly Responsive Gate-Controlled p-GaN/AlGaN/GaN Ultraviolet Photodetectors with a High-Transmittance Indium Tin Oxide Gate

Micromachines
This work presents highly responsive gate-controlled p-GaN/AlGaN/GaN ultraviolet photodetectors (UVPDs) on Si substrates with a high-transmittance ITO gate.
Zhanfei Han, Xiangdong Li, Hongyue Wang, Yuebo Liu, Weitao Yang, Zesheng Lv, Meng Wang, Shuzhen You, Jincheng Zhang, Yue Hao   +9 more
doaj   +1 more source