Results 101 to 110 of about 29,855,390 (205)

Analog/RF and Distortion Characteristics of Recessed Superjunction AlGaN/GaN HEMTs

IET Circuits, Devices &Systems, Volume 2026, Issue 1, 2026.
In this work, we investigate the impact of the recessed height of the i‐gallium nitride (GaN) layer on the performance of superjunction AlGaN/GaN high electron mobility transistors (HEMTs). The recessed height (h) of the superjunction layer is systematically varied from 0 to 30 nm while keeping all other device dimensions and biasing conditions ...
Nahida Banu, Chandrima Mondal, Abhijit Biswas, Harsupreet Kaur   +3 more
wiley   +1 more source

Vth and Ron Instability of GaN Power HEMTs with pGaN Gate Under Negative Gate Bias

We investigate the impact of negative gate stress on the stability of threshold voltage and on-resistance of p-GaN gate power HEMTs. We demonstrate three different trapping processes and describe the related kinetics: (process 1), trapping of electrons ...
Stockman, A., De Santi, C., Vanmeerbeek, P., Meneghesso, G., Zanoni, E., Favero, D., Meneghini, M., Nardo, A., Tack, M., Longato, S. L.   +9 more
core   +1 more source

Influence of AlxGa1−xN barrier layer thickness and p-GaN gate characteristics on the threshold voltage of p-GaN/AlGaN/GaN high electron mobility transistors

AIP Advances
In this research work, the pivotal role of threshold voltage (Vth) in the performance optimization of enhancement-mode (E-mode) AlGaN/GaN-based high-electron-mobility transistors (HEMTs) is explored.
Bang-zhi Xiao, Yin-shui He, Wen-bo Xiao
doaj   +1 more source

Impact of Inadequate Mg Activation on Dynamic Threshold Voltage of Schottky-type p-GaN Gate HEMTs

, 2023
To further reduce the forward gate current of Schottky-type p-GaN gate HEMTs, inadequate Mg activation in p-GaN is deployed in this work, which tends to convert the conventional p-GaN into insulating GaN with high concentration of Mg passivated by ...
Zheng, Zheyang, Ng, Yat Hon, Shu, Ji, Zhang, Li, Chen, Kevin J., Chen, Tao, Sun, Jiahui   +6 more
core   +1 more source

RTN Analysis of Schottky p-GaN Gate HEMTs Under Forward Gate Stress: Impact of Temperature [PDF]

This study presents a comprehensive analysis of random telegraph noise (RTN) to evaluate the impact of forward gate bias (VGS) and temperature (T) on defects creation and activation in the gate epi-stack of GaN-based Schottky p-GaN gate HEMTs.
Tallarico A. N., Borga M., Fiegna C., Decoutere S., Valentini L., Sangiorgi E., Millesimo M., Bakeroot B., Posthuma N.   +8 more
core   +1 more source

Degradation Mechanisms of Gate Leakage in GaN-Based HEMTs at Low Dose Rate Irradiation

IEEE Access
In this paper, we investigated an experimental analysis of the degradation caused by low dose rate irradiation in GaN-based high-electron-mobility transistors (HEMTs) with a p-type gate. Combined with experimental frequency-dependent conductance ( $\text{
Xiaolong Li, Xin Wang, Mohan Liu, Kunfeng Zhu, Guohua Shui, Qiwen Zheng, Jiangwei Cui, Wu Lu, Yudong Li, Qi Guo   +9 more
doaj   +1 more source

Analytical Switching Loss Model for GaN Gate Injection Transistors

IEEE Open Journal of Power Electronics
Gallium nitride (GaN) high electron mobility transistors (HEMTs) are increasingly adopted in highly efficient power converters. In the design and optimization of GaN-based converters, accurate analytical models with low computational effort are required ...
Ruida Zhang, Jurgen Biela
doaj   +1 more source

Improving the High-Temperature Gate Bias Instabilities by a Low Thermal Budget Gate-First Process in p-GaN Gate HEMTs. [PDF]

Micromachines (Basel), 2023
Langpoklakpam C, Liu AC, You NJ, Kao MH, Huang WH, Shen CH, Tzou J, Kuo HC, Shieh JM.   +8 more
europepmc   +1 more source

Gate leakage current sensing for in situ temperature monitoring of p-GaN gate HEMTs

, 2020
In this paper, an effective, yet simple, methodology for the temperature monitoring of voltage-driven p-GaN HEMTs based on gate leakage current sensing is presented.
Breglio G., Irace A., Longobardi G., Maresca L., Borghese A., Riccio M., A. Borghese, G. Breglio, L. Maresca, A. Irace, M. Riccio, G. Longobardi   +11 more
core   +1 more source

Local stress engineering for the optimization of p-GaN gate HEMTs power devices

, 2017
International audienceThe impact of the built-in stress of the SiN passivation layer on p-GaN gate High Electron Mobility transistors (HEMTs) is investigated through TCAD simulations. Local modifications of electron confinement in the channel area due to
M. Pala, T. Cosnier, Cosnier T, Cosnier, T, Pala, M., L. Lucci, A. Torres, Lucci, L, Torres, A., Lucci L, Torres A, Pala M, Pala, M   +12 more
core   +3 more sources