Results 61 to 70 of about 29,855,390 (205)

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition

2022 IEEE International Reliability Physics Symposium (IRPS), 2022
A combined experimental/simulation analysis has been performed to study the gate reliability of GaN-HEMTs with p-type gate under pulse stress conditions. Results show that the time-dependent gate breakdown (TDGB) can be determined by two factors: i) the total ON-time during which the device is subjected to a positive gate bias before the failure; ii ...
Millesimo M., Bakeroot B., Borga M., Posthuma N., Decoutere S., Sangiorgi E., Fiegna C., Tallarico A. N.   +7 more
openaire   +1 more source

Vacancy‐Type Defects in N‐Implanted GaN and Their Impact on Mg Diffusion Studied by a Monoenergetic Positron Beam

physica status solidi (b), Volume 263, Issue 11, November 2026.
Vertical GaN devices have been extensively studied, and Mg implantation with sequential N implantation has been reported as an ideal technique for fabricating p‐type regions in these devices. We used positron annihilation to study vacancy behavior during ultrahigh‐pressure annealing. It was found that the imbalanced formation of Ga‐ and N‐vacancies and
Akira Uedono, Moriyuki Kanno, Shigefusa F. Chichibu, Shoji Ishibashi, Tetsu Kachi, Jun Suda   +5 more
wiley   +1 more source

Challenges and Advances in Materials and Fabrication Technologies for the Development of p-GaN Gated E-Mode AlGaN/GaN Power HEMTs: A Critical Review

IEEE Access
Industries including energy production, automotive and aerospace has seen a tremendous increase in interest in high temperature electronics. There has been a lot of investigations done on wide bandgap materials because of the difficulties traditional ...
J. Ajayan, Vakkalakula Bharath Sreenivasulu, N. Aruna Kumari, S. Sreejith, Subhajit Das   +4 more
doaj   +1 more source

Polar Wurtzite NbAlN: A Transition‐Metal Nitride Alloy for Polarization‐Engineered GaN Heterostructures

Advanced Materials, Volume 38, Issue 60, 27 October 2026.
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi, Souta Kurogi, Tomoya Okuda, Riku Kikuchi, Yusuke Wakamoto, Kouei Kubota, Hikaru Sasaki, Kazuhisa Ikeda, Kanako Shojiki, Takahiro Kawamura, Toru Akiyama, Takehito Seki, Takuya Maeda   +12 more
wiley   +1 more source

Optimization of the Field Plate Design of a 1200 V p-GaN Power High-Electron-Mobility Transistor

Micromachines, 2022
This study optimized the field plate (FP) design (i.e., the number and positions of FP layers) of p-GaN power high-electron-mobility transistors (HEMTs) on the basic of simulations conducted using the technology computer-aided design software of Silvaco.
Chia-Hao Liu, Chong-Rong Huang, Hsiang-Chun Wang, Yi-Jie Kang, Hsien-Chin Chiu, Hsuan-Ling Kao, Kuo-Hsiung Chu, Hao-Chung Kuo, Chih-Tien Chen, Kuo-Jen Chang   +9 more
doaj   +1 more source

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor

Advanced Functional Materials, Volume 36, Issue 73, 10 September 2026.
A comprehensive model is developed to capture the coupled electrostatics of a ferroelectric capacitor and a metal‐insulator‐semiconductor high electron mobility transistor (MISHEMT) connected in ferroelectric‐metal high electron mobility transistor (FeMHEMT) configuration.
Wentian Gao, Andre Wachowiak, Thomas Mikolajick, Uwe Schroeder, Roberto Guido   +4 more
wiley   +1 more source

Hole Virtual Gate Model Explaining Surface-Related Dynamic RON in p-GaN Power HEMTs [PDF]

Dynamic on-resistance ( RON) affects the stability of p-GaN power HEMTs. In Schottky-gate HEMTs, dynamic RON is associated to either electron trapping at device surface or dynamic effects occurring in the buffer.
Zagni N., Borgarino M., Iucolano F., Verzellesi G., Bertacchini A., Chini A.   +5 more
core   +1 more source

E-mode p-n Junction/AlGaN/GaN HEMTs with Enhanced Gate Reliability

, 2020
in this work, we investigate the gate reliability of E-mode ${p-n}$ junction gate (PNJ) HEMT, which features an n GaN/p-GaN/AlGaN/GaN gate stack. Both electric-field and thermal-accelerated time-dependent gate breakdown (TDGB) tests were conducted on the
Wang, Chengcai, Yang, Song, Zhang, Li, Chen, Kevin J., Hua, Mengyuan   +4 more
core   +1 more source

Effect of P-Type GaN Buried Layer on the Temperature of AlGaN/GaN HEMTs

Micromachines, 2023
In this paper, a P-type GaN buried layer is introduced into the buffer layer of AlGaN/GaN HEMTs, and the effect of the P-type GaN buried layer on the device’s temperature characteristics is studied using Silvaco TCAD software.
Hanghang Lv, Yanrong Cao, Maodan Ma, Zhiheng Wang, Xinxiang Zhang, Chuan Chen, Linshan Wu, Ling Lv, Xuefeng Zheng, Yongkun Wang, Wenchao Tian, Xiaohua Ma   +11 more
doaj   +1 more source

Low Thermal Resistance Architectures for AlGaN‐Based Semiconductor Devices

Advanced Electronic Materials, Volume 12, Issue 17, 7 September 2026.
Engineering channel thickness and substrate material significantly improves thermal management in AlGaN RF devices. A 5 nm AlGaN channel integrated on an AlN substrate achieved a record‐low thermal resistance of 3.96 K·mm${\rm K}\cdot{\rm mm}$/W, representing an 88.7% reduction compared with 500 nm AlGaN‐on‐sapphire devices.
Kidus Guye, Davide Orlandini, Seungheon Shin, Andy Allerman, Damena Agonafer, Siddharth Rajan, Samuel Graham   +6 more
wiley   +1 more source