Results 111 to 120 of about 3,988,589 (240)
Trions as Fundamental Species in Chemically Doped Polymer Semiconductors
Advanced Materials, EarlyView.This work shows that exciton–charge carrier coupling in doped polymer semiconductors gives rise to multi‐particle states, including trions—quasiparticles consisting of two holes and one electron under p‐doping—and bound exciton‐hole pairs, as identified through spectroscopic and theoretical analysis.
Hongmo Li +23 more
wiley +1 more source
A Geometrically Transient Platform for Bioelectronic Implants
Advanced Materials, EarlyView.Minimally invasive bioelectronic implants often compromise performance for smaller sizes. To resolve this optimization dilemma, a wireless bioelectronic implant with a transient geometry is introduced (MiFi). The origami‐inspired device miniaturizes up to sixfold for syringe insertion and autonomously unfolds post‐implantation.
Selin Olenik +13 more
wiley +1 more source
NanomaterialsThe half-Heusler semiconductors ZrNiPb and ZrPdPb have attracted considerable attention due to their excellent thermoelectric performance, owing largely to their appropriate energy bandgap.
Xiaorui Chen +4 more
doaj +1 more source
Advanced Materials, EarlyView.A scalable bottom‐up CVD methodology, based on liquid transition metal salt precursors, is presented for the controlled growth of two high‐quality MoSe2–WSe2 heterostructures (HSs): purely lateral (HS I) and hybrid lateral/vertical (HS II), by simply adjusting precursor concentration.
Md Tarik Hossain +16 more
wiley +1 more source
Kuijk bandgap voltage reference with high immunity to EMI
, 2010 peer reviewedThis brief evaluates the effect of conducted electromagnetic interference (EMI) that is injected in the power supply of a classic Kuijk bandgap reference voltage circuit.
Steyaert, M., Redouté, Jean-Michel
core +1 more source
Advanced Materials, EarlyView.Mixed‐cation lead mixed‐halide perovskites suffer from structural instabilities linked to nanoscale heterogeneity. To probe this non‐destructively, a low‐dose, concurrent 4D‐STEM and EDX methodology has been developed. Examining a (FA0.83Cs0.17)Pb(I0.8Br0.2)3 film revealed a complex mosaic of coexisting crystal structures. Crucially, local deficiencies
Jinseok Ryu +6 more
wiley +1 more source
Study on the Feasibility of SiC Bandgap Voltage Reference for High Temperature Applications
, 2011 This work demonstrates that a stable voltage reference with temperature, in the 25°C-300°C range is possible using SiC bipolar diodes. In a previous work, we have been demonstrated both theoretical and experimentally, the feasibility of SiC bandgap ...
Xavier Jordá +4 more
core +1 more source
Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors
Advanced Materials, EarlyView.Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee +15 more
wiley +1 more source
Advanced Materials, EarlyView.We show that sol‐gel‐fractured indium–magnesium oxide combines deep‐ultraviolet responsivity, high carrier mobility, and an excellent memory dynamic range. This unique materials platform enables deep‐ultraviolet long‐afterglow light‐emitting devices with multifunctional integration.
Zhongshi Ju +9 more
wiley +1 more source
A Universal van der Waals Tunneling Injector for Monolayer CMOS
Advanced Materials, EarlyView.A universal van der Waals injector unlocks polarity‐flexible tunneling contacts for monolayer CMOS. SnSe2, an intrinsically degenerate 2D semiconductor, establishes polarity‐specific band alignments with both WSe2 and MoS2 channels, enabling steep switching, high on/off ratios, and a unified route to low‐power 2D logic.
Hanbin Cho +17 more
wiley +1 more source