Results 1 to 10 of about 671,184 (266)
Tunable Microwave Dielectric Properties of Ca0.6La0.8/3TiO3 and Ca0.8Sm0.4/3TiO3-Modified (Mg0.6Zn0.4)0.95Ni0.05TiO3 Ceramics with a Near-Zero Temperature Coefficient [PDF]
The microstructures and microwave dielectric properties of (Mg0.6Zn0.4)0.95Ni0.05TiO3 with Ca0.6La0.8/3TiO3 and Ca0.8Sm0.4/3TiO3 additions prepared by the solid-state method has been investigated.
Chung-Long Pan +3 more
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A Low-Voltage Low-Power Voltage-to-Current Converter with Low Temperature Coefficient Design Awareness [PDF]
This paper presents a low-voltage, low-power voltage-to-current converter (V-I Converter) implemented in TSMC 40 nm CMOS technology. Operating at a supply voltage of 0.45 V with an input range of 0.1 V to 0.3 V, the proposed circuit achieves a ...
Haoze Chen, Pak Kwong Chan
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Temperature Rise Characteristics and Error Analysis of a DC Voltage Divider
Measurement accuracy is an important performance indicator for high-voltage direct current (HVDC) voltage dividers. The temperature rise effect for a HVDC voltage divider’s internal resistance has an adverse effect on measurement accuracy. In this paper,
Zhengyun Fang +6 more
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In this study, we investigated various sintering temperatures (1200 °C−1450 °C) and durations (2–6 h) conditions for preparing (Tb _1/2 Nb _1/2 ) _0.01 Ti _0.99 O _2 (TNTO) ceramics.
Noppakorn Thanamoon, Prasit Thongbai
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In this paper we investigate the temperature dependent behavior of a liquid crystal (LC) loaded tunable dielectric image guide (DIG) phase shifter at millimeter-wave frequencies from 80 GHz to 110 GHz for future high data rate communications.
Henning Tesmer +5 more
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THE TEMPERATURE COEFFICIENT OF PHOTOSYNTHESIS [PDF]
The temperature coefficient of photosynthesis in Ulva (between 17° and 27°C.) is 1.81. This may be explained by assuming that the process involves a light reaction with a low coefficient followed by an ordinary reaction with a high coefficient.
W J, Osterhout, A R, Haas
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A 21.4 pW Subthreshold Voltage Reference with 0.020 %/V Line Sensitivity Using DIBL Compensation
This paper presents an ultra-low-power voltage reference designed in 180 nm CMOS technology. To achieve near-zero line sensitivity, a two-transistor (2-T) voltage reference is biased with a current source to cancel the drain-induced barrier-lowering ...
Louis Colbach +2 more
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This work presents an examination and unification of fragmented data on spin polarization in half-metallic, ferrimagnetic oxides. It also includes well understood ferromagnetic metals for comparison.
Gunnar Suchaneck
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Thin Al1−xGaxAs0.56Sb0.44 diodes with extremely weak temperature dependence of avalanche breakdown [PDF]
When using avalanche photodiodes (APDs) in applications, temperature dependence of avalanche breakdown voltage is one of the performance parameters to be considered. Hence, novel materials developed for APDs require dedicated experimental studies.
Xinxin Zhou +6 more
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The temperature–size rule (TSR) has been consistently observed in numerous studies, showing that ectotherms reared at higher temperatures experience accelerated growth during the juvenile stage and ultimately reach smaller sizes and younger ages at ...
Piotr Maszczyk +8 more
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