Results 1 to 10 of about 17,303 (109)

A High-Precision Current-Mode Bandgap Reference with Nonlinear Temperature Compensation [PDF]

open access: yesMicromachines, 2023
A high-precision current-mode bandgap reference (BGR) circuit with a high-order temperature compensation is presented in this paper. In order to achieve a high-precision BGR circuit, the equation of the nonlinear current has been modified and the high ...
Zhizhi Chen   +5 more
doaj   +4 more sources

A High-Precision Bandgap Reference with Chopper Stabilization and V-Curve Compensation Technique [PDF]

open access: yesMicromachines, 2023
The MEMS sensor converts the physical signal of nature into an electrical signal. The output signal of the MEMS sensor is so weak and basically in the low-frequency band that the MEMS sensor interface circuit has a rigorous requirement for the noise ...
Enming Chen   +3 more
doaj   +2 more sources

A 2.5 V, 2.56 ppm/°C Curvature-Compensated Bandgap Reference for High-Precision Monitoring Applications [PDF]

open access: yesMicromachines, 2022
This work presents a high-precision high-order curvature-compensated bandgap voltage reference (BGR) for battery monitoring applications. The collector currents of bipolar junction transistor (BJT) pairs with different ratios and temperature ...
Guangqian Zhu   +4 more
doaj   +2 more sources

A Design of 10-Bit Asynchronous SAR ADC with an On-Chip Bandgap Reference Voltage Generator [PDF]

open access: yesSensors, 2022
A proposed prototype of a 10-bit 1 MS/s single-ended asynchronous Successive Approximation Register (SAR) Analog-to-Digital Converter (ADC) with an on-chip bandgap reference voltage generator is fabricated with 130 nm technology.
Deeksha Verma   +7 more
doaj   +2 more sources

Design of a Bandgap Reference with a High PSRR and Strong Load-Driving Capability [PDF]

open access: yesMicromachines
This paper introduces an enhanced bandgap reference (BGR) design, addressing the shortcomings of traditional circuits, such as significant temperature drift, limited power-supply rejection, and inadequate load-driving capacity.
Meng Li   +6 more
doaj   +2 more sources

A 180 nm Self-biased Bandgap Reference with High PSRR Enhancement [PDF]

open access: yesNanoscale Research Letters, 2020
In this paper, an improved self-biased bandgap reference (BGR) with high power supply rejection ratio (PSRR) is presented. An operational amplifier constructing feedback loop is multiplexed with the generation of positive temperature coefficient (TC ...
Yue Shi   +4 more
doaj   +2 more sources

A 0.82 μVrms ultralow 1/f noise bandgap reference for a MEMS gyroscope [PDF]

open access: yesMicrosystems & Nanoengineering, 2023
High-precision microelectromechanical system (MEMS) gyroscopes are significant in many applications. Bias instability (BI) is an important parameter that indicates the performance of a MEMS gyroscope and is affected by the 1/f noise of the MEMS resonator
Junjun Zou   +7 more
doaj   +2 more sources

Design of a Bandgap Reference Circuit for MEMS Integrated Accelerometers [PDF]

open access: yesMicromachines
To meet the requirements of integrated accelerometers for a high-precision reference voltage under wide supply voltage range, high current drive capability, and low power consumption, this paper presents a bandgap reference operational amplifier (op-amp)
Wenbo Zhang   +5 more
doaj   +2 more sources

A Curvature Compensation Technique for Low-Voltage Bandgap Reference

open access: yesEnergies, 2021
Based on the standard 40 nm Complementary Metal Oxide Semiconductor (CMOS) process, a curvature compensation technique is proposed. Two low-voltage, low-power, high-precision bandgap voltage reference circuits are designed at a 1.2 V power supply.
Jie Shen   +3 more
doaj   +3 more sources

Trimmable bandgap reference circuit with exponential curvature compensation

open access: yesJournal of Electronic Science and Technology, 2023
This paper proposes an improved exponential curvature-compensated bandgap reference circuit to exploit the exponential relationship between the current gain β of the bipolar junction transistor (BJT) and the temperature as well as reduce the influence of
Hong-Zhuan Chen   +5 more
doaj   +1 more source

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