Results 31 to 40 of about 4,164,324 (286)

Wide-Supply-Voltage-Range CMOS Bandgap Reference for In Vivo Wireless Power Telemetry

Energies, 2020
The robustness of the reference circuit in a wide range of supply voltages is crucial in implanted devices. Conventional reference circuits have demonstrated a weak performance over wide supply ranges.
Ruhaifi Bin Abdullah Zawawi, Wajahat H. Abbasi, Seung-Hwan Kim, Hojong Choi, Jungsuk Kim   +4 more
doaj   +1 more source

Hollow core photonic bandgap fibre for truly single mode operation

, 2008
Based on extensive numerical simulations we fabricate a 3-cell core photonic bandgap fibre.
Petrovich, M.N., D. J. Richardson, Richardson, D.J., A. van Brakel, Poletti, F., M. N. Petrovich, F. Poletti, van Brakel, A.   +7 more
core   +1 more source

A bandgap reference source with higher-order curvature compensation

Dianzi Jishu Yingyong
Based on the 0.18 μm BCD process, a higher-order curvature compensation bandgap reference with low temperature coefficient is proposed. On the basis of the basic Kuijk bandgap reference structure, the VBE linearization method is used to perform high ...
Huang Chaoxuan, Li Xiankun, Wei Jinghe
doaj   +1 more source

A low-voltage, low-power CMOS bandgap reference [PDF]

, 2010
textBandgap reference circuits are used in a host of analog, digital, and mixed-signal systems to establish an accurate voltage reference for the entire IC.
Murugeshappa, Ravi Gourapura
core  

Optoelectronic Synaptic Devices Using Molecular Telluride Phase‐Change Inks for Three‐Factor Learning

Advanced Functional Materials, EarlyView.
Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner, Dhananjeya Kumaar, Giacomo Torti, Killian Keller, Till Zellweger, Florian M. Schenk, Christoph Weilenmann, Daniel Chelladurai, Vara Prasad Jonnalagadda, Ghazi Sarwat Syed, Vanessa Wood, Jürg Leuthold, Alexandros Emboras, Maksym Yarema, Mathieu Luisier   +14 more
wiley   +1 more source

Reservoir‐Driven Neuromorphic Computing Based on Composite Rare‐Earth/Transition Metal Oxide Memristor

Advanced Functional Materials, EarlyView.
A defect‐engineered Ag/Gd2O3:Nb2O5/Pt rare earth composite oxide memristor enables stable multilevel reservoir states through pulse driven conductance modulation. Experimentally measured device responses are incorporated into a device aware reservoir computing framework for CIFAR‐100 image classification, highlighting the potential of rare earth ...
Hammad Ghazanfar, Haider Abbas, Muhammad Rabeel, Honggyun Kim, Ghulam Dastgeer, Muhammad Nasim, Furqan Zahoor, Yawar Abbas, Waqas Ahmad, Deok‐kee Kim   +9 more
wiley   +1 more source

A 1.2V −55°C‐125°C ultra‐low noise bandgap voltage reference without start‐up circuit

Electronics Letters, 2023
This paper proposes a novel bandgap voltage reference (BGR) with low temperature coefficient, ultra‐low noise and without start‐up circuit. Designed in a TSMC 180‐nm CMOS technology, this bandgap voltage reference operates in the temperature range of −55
Linzhi Tao, Haoyu Zhuang, Qiang Li
doaj   +1 more source

Novel Methods for Improved Particle Swarm Optimization in Designing the Bandgap Reference Circuit

IEEE Access, 2023
Bandgap reference (BGR) circuits play a crucial role as voltage reference generators for other components within a variety of analog integrated circuits.
Trang Hoang, Thang Nguyen Quoc, Lihong Zhang, Trung Q. Duong   +3 more
doaj   +1 more source

Electrically Induced Phase Transition and Synaptic Functionality in MoTe2/Graphene Memristors

Advanced Functional Materials, EarlyView.
An electrically induced reversible 2H ↔ 1T′ phase transition is demonstrated in a vertical Au/Ti/MoTe2/graphene memristor with a laterally contacted graphene electrode. Resistive switching proceeds through a compositionally invariant amorphous/2H ↔ amorphous/1T′ transformation, in which a self‐formed amorphous MoTe2 interfacial region is proposed to ...
Chien‐Hua Wang, Mu‐Pai Lee, Jhen‐Dong Tsai, Liang‐Ying Hsieh, Jui‐Yuan Chen, Chun‐Wei Huang, Yen‐Fu Lin, Wen‐Wei Wu   +7 more
wiley   +1 more source

Design of a wide-input-range and high-PSR bandgap reference

Dianzi Jishu Yingyong
Based on the actual design requirements of DC-DC chip circuit, this paper designs a bandgap reference circuit with an input voltage range of 2.5~15 V. Through the design of the pre-regulator circuit, the reference voltage output by the bandgap reference ...
Li Siyuan, Li Yajun, Zhang Youtao, Qian Feng   +3 more
doaj   +1 more source