Results 141 to 150 of about 4,164,324 (286)

Oxygen‐Controlled Structural and Defect Engineering of Magnetron‐Sputtered ZnO Thin Films for Photosensing

Advanced Materials Interfaces, EarlyView.
Zinc oxide thin films are engineered by controlling oxygen flow and nominal partial pressure during growth to tune atomic‐scale defects and crystallographic texture that limit device performance. By balancing competing defects, the films achieve improved preferential c‐axis orientation and enhanced ultraviolet photoresponse.
Julfikar Ali Sarkar, Rupa Jeena, Mohammed Aslam   +2 more
wiley   +1 more source

Advances in Halide Perovskites for Photon Radiation Detectors

Advanced Materials Technologies, EarlyView.
This work highlights recent progress in perovskite‐based photon radiation detectors, covering organic–inorganic hybrid, inorganic, lead‐free double, and vacancy‐ordered halide perovskites. Their detection performance is compared, material‐specific advantages and challenges are examined, and provides insight into current limitations and future ...
Liangling Wang, Jieqi Wang, Xiaojun Cui, Carsten Ronning   +3 more
wiley   +1 more source

Recent Advances in Transparent Microelectrode Device Architecture and Fabrication Strategies for Biomedical Applications

Advanced Materials Technologies, EarlyView.
Transparent microelectrode arrays enable simultaneous optical and electrical electrophysiology with high spatiotemporal resolution, allowing multimodal observations of dynamic biological systems. Advances in materials and device architectures improve device performance by addressing key trade‐offs between optical transparency, impedance, and ...
Michael Abraham Listyawan, Tran Bach Dang, Chi Cong Nguyen, Yee Lap Pong, Tianruo Guo, Thanh Nho Do, Hoang‐Phuong Phan   +6 more
wiley   +1 more source

Wafer‐Scale Top‐Down Patterning of Metal Halide Perovskites

Advanced Materials Technologies, EarlyView.
Wafer‐scale patterning of metal halide perovskite films is demonstrated on 150 mm substrates using a chemically amplified resist, polymethyl methacrylate (CAR‐PMMA) and a single reactive ion etching step. The streamlined process preserves film luminescence while defining submicrometer features across the full wafer, enabling dense, scalable integration
Federico Fabrizi, Ardeshir Esteki, Holger Lerch, Saeed Goudarzi, Liudmila Starodubtceva, Gerhard Müller‐Newen, Maryam Mohammadi, Max C. Lemme   +7 more
wiley   +1 more source

Recent Advances in Light‐Addressable Electrochemistry for Spatially Resolved Applications

Advanced Materials Technologies, EarlyView.
This comprehensive review highlights light‐addressable electrochemistry as a powerful tool that uses light to control localized chemical reactions on unstructured semiconductor surfaces. The work evaluates advanced strategies to optimize electrode materials for enhanced spatial resolution and stability. Furthermore, it showcases diverse applications in
Nhi Trang Vo, Sina Jamali, Nam‐Trung Nguyen   +2 more
wiley   +1 more source

Conductive Tin Oxide Under the Thermal Budget of Perovskite/TOPCon Tandems: Toward Indium‐Free Contacts

Advanced Materials Technologies, EarlyView.
This work demonstrates that achieving conductive undoped SnOx contacts required careful tailoring of oxygen vacancy (VO) tuning and defect engineering. Controlling oxygen deposition pressure and low‐temperature annealing (300°C) optimizes defect stoichiometry and mitigates carrier scattering. This low thermal budget approach significantly enhances Hall
Paul Llontop, Mario Hanser, Matthew Wright, Soumyajit Maitra, Eloy J. Marcelis, Jana‐Isabelle Polzin, Martin Bivour, David C. Grinter, Pilar Ferrer, Iris C. G. van den Bosch, Christoph Baeumer, Ruy S. Bonilla, Armin Richter, Monica Morales‐Masis   +13 more
wiley   +1 more source

Vertical Gate‐All‐Around SiGeSn/GeSn/SiGeSn Nanowire Transistors for Energy‐Efficient Electronics

Advanced Materials Technologies, EarlyView.
Band‐engineered SiGeSn/GeSn/SiGeSn heterostructures enable complementary vertical nanowire MOSFETs and steep slope tunnel FETs (TFETs) within a unified Group‐IV platform. Leakage suppression and tunnelling‐path engineering demonstrate an effective strategy for future low‐power and energy‐efficient integrated electronics.
Kenta Moto, Yannik Junk, Marvin Frauenrath, Florian Bärwolf, Jean‐Michel Hartmann, Andreas Mai, Detlev Grützmacher, Joachim Knoch, Dan Buca, Qing‐Tai Zhao   +9 more
wiley   +1 more source

Processing‐Driven Engineering of Transparent Conductive In‐Zn‐O Thin Films: A Comparative Study of Spin‐Coating, Inkjet Printing, and Screen Printing

Advanced Materials Technologies, EarlyView.
Transparent, electrically conductive In–Zn–O thin films are solution‐processed by spin coating, inkjet printing, and, as demonstrated here for the first time, screen printing. The chosen deposition technique determines the solution composition, which in turn governs the resulting microstructure and optoelectronic performance.
Danjela Kuscer, Izabela Čurković, Brigita Kmet, Aleksander Matavž   +3 more
wiley   +1 more source

Dielectric Permittivity Tensor of Muscovite for Next Generation All Van Der Waals Broadband Photonic Components

Advanced Optical Materials, EarlyView.
Low‐index and low‐loss vdW muscovite represents an emerging robust dielectric platform for the creation of next‐generation all‐vdW nanophotonic architectures. Its utilization as a low‐index building‐block in all‐vdW multilayers enables extreme optical contrast when paired with MoS2, paving the way to the realization of few‐layer ultrathin DBS ...
Meri H. Hayrapetyan, Maksim L. Sargsyan, Davit A. Karakhanyan, Ani P. Khachatryan, Maria A. Levonyan, Dmitrii Litvinov, Maciej Koperski, Artsruni V. Margaryan, Makars Šiškins, Konstantin S. Novoselov, Davit A. Ghazaryan   +10 more
wiley   +1 more source

Band Gap - accurate voltage reference

, 2009
This diploma thesis is specialized on a design of a high accuracy voltage reference Bandgap. A very low temperature coefficient and output voltage approx. 1,205V are the main features of this circuit.
Bubla, Jiří
core