Results 191 to 200 of about 4,164,324 (286)

Fast Neutron-Induced Enhancement of the I8 Exciton Emission in ZnO Bulk Single Crystals. [PDF]

Nanomaterials (Basel)
Zeidan MM, Abedrabbo S.
europepmc   +1 more source

Giant Bulk Photovoltaic Effect in Two‐Dimensional Topological Ferroelectric Semimetal

Advanced Science, EarlyView.
ABSTRACT Ferroelectric (FE) metals have attracted growing interest because they combine ferroelectricity with metallic behavior and enable polarization‐controlled band topology near the Fermi level. However, the number of known ferroelectric metals is still limited.
Jianhua Wang, Xia Cheng, Shibo Fang, Tao Zhu, Xiaodong Zhou, Shifeng Qian, Tie Yang, Wenhong Wang, Yee Sin Ang   +8 more
wiley   +1 more source

High-throughput Materials-to-Device Discovery of Lead-free Double Perovskites Beyond Radiative-limit Metrics. [PDF]

JACS Au
Wang Y, Meng L, Zhuang W.
europepmc   +1 more source

Multiferroic‐Centric Materials and Systems Engineering for Battery Applications: An Insight Into Mechanisms, Strategies, and Characterizations

Advanced Science, EarlyView.
Multiferroic order parameters – polarization, magnetization, and ferroelastic strain – are positioned as dynamic design variables for batteries. Their mechanistic roles, practical tuning through fabrication and external fields, and ferroic‐resolved characterization routes are unified into a closed‐loop framework, revealing how coupled ferroic responses
Jiaqi Su, Yanda Zhu, Hao Peng, Manman Li, Xuzihan Zhang, Meixiao Wu, Siyuan Zhang, Yuhan Zeng, Jiwen Liao, Ming Luo, Hetaishan Huang, Yutong Wang, Sean Li, Wenxian Li   +13 more
wiley   +1 more source

Modeling and Enhancing Responsivity for the InGaAsN/GaAs Configuration in p-i-n Photodiodes. [PDF]

Micromachines (Basel)
Hafi N, Aissat A, Hadjadj K, Dupont S, Saidi F, Dhaou MH, Vilcot JP.   +6 more
europepmc   +1 more source

Boosting Ferroelectricity: 2D and Polymer Ferroelectric Hybrids Enabling Ambipolar Nonvolatile MoS2 Memory Transistor

Advanced Science, EarlyView.
Two‐dimensional CuInP2S6 nanosheets are incorporated into a P(VDF‐TrFE) matrix to induce polarization‐cooperative ferroelectric coupling. The resulting P(VDF‐TrFE)/CuInP2S6 hybrid film exhibits reinforced ferroelectric ordering and reduced coercive electric fields compared with pristine P(VDF‐TrFE).
Yeonsu Jeong, Honglei Wang, Pietro Tordi, Ying Chieh Hu, Adrián Tamayo, Bing Wu, Hyun Soo Ahn, Zdenek Sofer, Jong Hoon Jung, Massimo Bonini, Paolo Samorì   +10 more
wiley   +1 more source

Intrinsically Conductive Films of Ag2Te Nanocrystals for Broadband Infrared Photodetection beyond 2000 nm. [PDF]

Nano Lett
Huo Y, Kuznetsova YV, Sokolova AV, Guo C, Sergeev AA, Wong KS, Sergeeva KA, Rogach AL.   +7 more
europepmc   +1 more source

Nanoscale Optical Inhomogeneities From Compositional Segregation Within Individual GaN‐on‐Si Quantum Wells

Advanced Science, EarlyView.
This work visualizes local variations in luminescence and relates them to nanoscale chemical inhomogeneities in single InxGa1−xN quantum wells. We demonstrate that the elemental segregation is only inherent to quantum wells with high indium content. Density functional theory shows this to be the result of strain‐induced phase stabilization, explaining ...
Jing‐Yang Chung, Tara P. Mishra, Zackaria Mahfoud, Thomas E. Gage, Jianguo Wen, Katherine P. Rice, Isabelle Martin, Li Zhang, Govindo J. Syaranamual, Stephen J. Pennycook, Silvija Gradečak, Pieremanuele Canepa, Michel Bosman   +12 more
wiley   +1 more source

First-Principles Design of Cubic Spinel ZnIn₂S₄ With Enhanced Carrier Transport, Optical Response, and Mechanical Stability for Photocatalytic and Optoelectronic Applications. [PDF]

ChemistryOpen
Rahman M, Tanisa NY, Roshid MM, Yildirim Y, Khan MSA.   +4 more
europepmc   +1 more source

Volatile ZrO2 Antiferroelectric Tunnel Junctions for Rapid, Energy‐Efficient Physical Reservoir Computing

Advanced Science, EarlyView.
An antiferroelectric tunnel junction serves as a reservoir computing node, where field‐induced phase transitions and spontaneous ZrO2 relaxation deliver nonlinear fading memory. An In‐Ga‐Zn oxide interlayer enlarges the memory margin and multibit state richness.
Taegyu Kwon, Moonseek Jeong, Su In Hwang, Geun Hyeong Park, Joonyong Kim, Hyojun Choi, Hyeong Seok Choi, Da Hyun Kim, Dong Hee Han, Ju Yong Park, Seungho Baek, Jung Ho Yoon, Dong Hyun Lee, Min Hyuk Park   +13 more
wiley   +1 more source