Results 161 to 170 of about 10,354 (260)

Inverse-Designed Ultra-Compact Passive Phase Shifters for High-Performance Beam Steering. [PDF]

open access: yesSensors (Basel)
Fu T   +8 more
europepmc   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

Sub-terahertz transmissive reconfigurable intelligent surface for integrated beam steering and self-OOK-modulation. [PDF]

open access: yesLight Sci Appl
Shen D   +15 more
europepmc   +1 more source

A High‐Resolution THz‐PCF Sensing Framework: Precise Identification of Food Preservatives Through Refractive Index Analysis

open access: yesAdvanced Materials Interfaces, EarlyView.
As presented in the graphical abstract, it depicts an image of a terahertz photonic crystal fiber (THz‐PCF) sensor with a polygonal shape in the core, which is filled with an analyte, and air slots in the cladding. The THz waves will travel through the fiber, and due to increased light‐matter interaction in the sensing region, changes in refractive ...
T. H. M. Sumon Rashid   +6 more
wiley   +1 more source

Bandgap‐Dependent Band‐to‐Band Tunneling in Carbon Nanotube Transistors

open access: yesAdvanced Materials Interfaces, EarlyView.
We systematically investigate bandgap‐dependent BTBT in SWCNT transistors by comparing wide‐bandgap (6,5) (Eg≈1.13 eV), medium‐bandgap HiPco, and narrow‐bandgap Arc‐discharge (Eg≈0.59 eV) SWCNT networks. The narrow‐bandgap networks show stronger BTBT, higher off‐state leakage, and lower on/off ratio, while wide‐bandgap (6,5) devices suppress BTBT and ...
Yuxiang Wei   +10 more
wiley   +1 more source

Grafted Low‐Leakage Si/AlN p‐n Diodes Enabled by Fluorinated AlN Interface

open access: yesAdvanced Materials Interfaces, EarlyView.
This work demonstrates a fluorination‐based interface engineering strategy that transforms oxygen‐terminated AlN surfaces into fluorine‐terminated interfaces for grafted p‐Si/n‐AlN diodes. By combining pseudo‐ALE oxide removal, XeF2 fluorination, and ultrathin SiNx stabilization, the engineered interface suppresses defect‐assisted reverse leakage by ...
Yi Lu   +21 more
wiley   +1 more source

Flexible Wide Bandgap Electrode System for In situ Cell Sensing and Irreversible Electroporation

open access: yesAdvanced Materials Interfaces, EarlyView.
The paper reports the design and wafer‐level microfabrication of a long‐lived, flexible 3C‐SiC electrode capable of sensitive and in situ cell sensing, as well as electroporation ablation. The work demonstrates a biocompatible and durable electrode platform that can perform reliable electrical interfacing with biological tissues over extended periods ...
Minh Anh Huynh   +3 more
wiley   +1 more source

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