Results 241 to 250 of about 262,408 (319)

Defect‐Mediated Scintillation in Fully Inorganic Perovskites via Water‐Induced 0D/3D Phase Modulation

open access: yesAdvanced Functional Materials, EarlyView.
A reproducible synthesis to control 3D/0D phase ratios via water‐tuned solvent–antisolvent methods is presented. Enhanced scintillation yield and ultrafast decay are achieved. Defect‐driven emission mechanisms are revealed through cathodoluminescence and radioluminescence, shedding light on the underexplored role of the 0D Cs4PbBr6 and mixed 0D/3D ...
Mario Calora   +18 more
wiley   +1 more source

Direct Evidence of Topological Dirac Fermions in a Low Carrier Density Correlated 5d Oxide

open access: yesAdvanced Functional Materials, EarlyView.
The 5d oxide BiRe2O6 is discovered as a low‐carrier‐density topological semimetal hosting symmetry‐protected Dirac fermions stabilized by nonsymmorphic symmetries. Angle‐resolved photoemission spectroscopy, quantum oscillations, and magnetotransport measurements reveal gapless Dirac cones, quasi‐2D Fermi surfaces, high carrier mobility, and a field ...
Premakumar Yanda   +11 more
wiley   +1 more source

A Review of Solid-State LiDAR Principles and Metasurface-Based LiDAR Sensors. [PDF]

open access: yesSensors (Basel)
Demirbas E   +6 more
europepmc   +1 more source

Epitaxial Interface‐Driven Photoresponse Enhancement in Monolayer WS2–MoS2 Lateral Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
Surface potential distribution image, along with the derived electric field distribution across the interface, reveals that the electric field reaches its peak at the interface. Additionally, the spectral response of the heterointerface exhibits higher and broader features compared to its bare counterparts.
Pargam Vashishtha   +18 more
wiley   +1 more source

Dynamic Control of Synaptic Plasticity by Competing Ferroelectric and Trap‐Assisted Switching in IGZO Transistors with Al2O3/HfO2 Dielectrics

open access: yesAdvanced Functional Materials, EarlyView.
A frequency‐tunable ferroelectric synaptic transistor based on a buried‐gate InGaZnO channel and Al2O3/HfO2 dielectric stack exhibits linear and reversible weight updates using single‐polarity pulses. By switching between ferroelectric and trap‐assisted modes depending on input frequency, the device simplifies neuromorphic circuit design and achieves ...
Ojun Kwon   +8 more
wiley   +1 more source

Synthesis and Electronic Structure of the Fractionally Occupied Double Perovskite EuTa2O6 with Ordered Europium Vacancies

open access: yesAdvanced Functional Materials, EarlyView.
Two‐dimensional electronic states are the foundation of modern semiconductor technology. Here, we report molecular‐beam epitaxy growth of fractional double perovskite, EuTa2O6. Reciprocal space mapping and transmission electron microscopy confirm a layered ordering of A‐site cations.
Tobias Schwaigert   +15 more
wiley   +1 more source

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