Results 301 to 310 of about 324,286 (368)

High Mobility, High Carrier Density SnSe2 Field‐Effect Transistors with Ultralow Subthreshold Swing and Gate‐Controlled Photoconductance Switching

open access: yesAdvanced Electronic Materials, EarlyView.
Field‐effect transistors with layered SnSe2 channel gated by a solution top gate combine very high room‐temperature electron mobility, large on‐off current ratios, and a subthreshold swing below the thermodynamic limit at exceptionally high sheet carrier concentrations.
Yuan Huang   +3 more
wiley   +1 more source

Strain‐Induced Reduction of Centrosymmetry in Rare‐Earth Iron Garnet Thin Films

open access: yesAdvanced Electronic Materials, EarlyView.
This study introduces reduced centrosymmetry in rare‐earth iron garnet thin films. Studies on compressively strained Sm3Fe5O12 and tensile‐strained Lu3Fe5O12 thin films reveal that above critical thickness, a more than tenfold increase in coercivity and non‐zero orbital moments indicate a reduction of centrosymmetry.
EMK Ikball Ahamed   +8 more
wiley   +1 more source

Soft and Stretchable Thienopyrroledione‐Based Polymers via Direct Arylation

open access: yesAdvanced Electronic Materials, EarlyView.
π‐conjugated polymers (CPs) that are concurrently soft and stretchable are needed for deformable electronics. This systematic molecular weight study on promising candidates for soft CPs, poly(indacenodithiophene‐co‐thienopyrroledione) (p(IDTC16‐TPDC8)) and poly(indacenodithienothiophene‐co‐thienopyrroledione) (p(IDTTC16‐TPDC8)) found that p(IDTC16 ...
Angela Lin   +9 more
wiley   +1 more source

CMOS‐Compatible HfOx‐Based Radiation Hardening Component for Neuromorphic Computing Applications

open access: yesAdvanced Electronic Materials, EarlyView.
HfOx‐based resistive random‐access‐memory (TiN/Ti/HfOx/RuOx/TiN) is fabricated by CMOS‐compatible materials – ruthenium, with a maskless etching‐free process. After a 5‐Mrad total ionizing dose test, the results showed non‐degradation performance, memory window ≈ 40 with operation power < 2 mW, > 8k endurance cycles, and 15‐year retention, which can be
Yao‐Feng Chang   +3 more
wiley   +1 more source

A Physics‐Based Compact Model for Ferroelectric Capacitors Operating Down to Deep Cryogenic Temperatures for Applications in Analog Memory and Neuromorphic Architectures

open access: yesAdvanced Electronic Materials, EarlyView.
A compact model for ferroelectric thin‐film capacitors operating under different electric fields and temperatures is reported. The model can reproduce polarization switching down to 4 K, making them suitable for quantum computing and space technologies.
Ella Paasio   +2 more
wiley   +1 more source

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