Results 91 to 100 of about 113,286 (339)
Control of Polarization and Polar Helicity in BiFeO3 by Epitaxial Strain and Interfacial Chemistry
In BiFeO3 thin films, the interplay of interfacial chemistry, electrostatics, and epitaxial strain is engineered to stabilize homohelicity in polarization textures at the domain scale. The synergistic use of a Bi2O2‐terminated Aurivillius buffer layer and a highly anisotropic compressive epitaxial strain offers new routes to control the polar‐texture ...
Elzbieta Gradauskaite +5 more
wiley +1 more source
Review of beryllium technology for spacecraft applications [PDF]
Joining, working, and structural properties of beryllium and beryllium alloys for spacecraft ...
Moss, R. G.
core +1 more source
The Solar Neutrino Problem: Neither Astrophysics Nor Oscillations? [PDF]
There is no consistent solar model which can describe all experimental data on the solar neutrinos. The problem can be formulated essentially in a model independent way.
Smirnov, Alexei Yu.
core +3 more sources
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Bio‐Inspired Molecular Events in Poly(Ionic Liquids)
Originating from dipolar and polar inter‐ and intra‐chain interactions of the building blocks, the topologies and morphologies of poly(ionic liquids) (PIL) govern their nano‐ and micro‐processibility. Modulating the interactions of cation‐anion pairs with aliphatic dipolar components enables the tunability of properties, facilitated by “bottom‐up ...
Jiahui Liu, Marek W. Urban
wiley +1 more source
A study of beryllium and beryllium-lithium complexes in single crystal silicon [PDF]
When beryllium is thermally diffused into silicon, it gives rise to acceptor levels 191 MeV and 145 meV above the valence band. Quenching and annealing studies indicate that the 145-MeV level is due to a more complex beryllium configuration than the 191 ...
Crouch, R. K. +2 more
core +1 more source
UCN anomalous losses and the UCN capture cross-section on material defects [PDF]
Experimental data shows anomalously large Ultra Cold Neutrons (UCN) reflection losses and that the process of UCN reflection is not completely coherent.
A. Fomin +33 more
core +1 more source
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
Beryllium film deposition was studied with cavity samples in remote areas of the inner and outer JET divertor and below divertor tile 5 during the 2011–2012 campaign with the ITER-like wall.
S. Krat +6 more
doaj +1 more source
2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics
2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit +5 more
wiley +1 more source

