Results 141 to 150 of about 2,364 (190)

Bi2Te3 filaments via extrusion and pressureless sintering of Bi2Te3-based inks

MRS Communications, 2021
Inks containing sub-20 µm particles of doped bismuth telluride (n-type Bi2Te2.73Se0.3 or p-type (Bi0.5Sb1.5)Te3) are extruded into 330 µm diameter filaments. When solid-state sintered up to 857 K under no pressure, the filaments only partially densify, with over 20% porosity remaining.
Christoph Kenel, Nicholas R. Geisendorfer, Jun Peng, Matthew A. Grayson, David C. Dunand   +4 more
openaire   +1 more source

Research on power factor of BNNT/Bi2Te3 and BCNNT/Bi2Te3 nanocomposite films

Journal of Nanoparticle Research, 2020
Thermoelectric (TE) material nanocomposite film is widely used in the design of many kinds of wearable flexible device and portable sensors. Herein, BNNT/Bi2Te3 and BCNNT/Bi2Te3 TE nanocomposite films were successfully fabricated by a cost-effective hot pressing and millipore membrane filter (HPMMF) method.
Ling Li, Xiangqian Jiang, Chuncheng Ban, Dequan Xie, Weiping Chen, Keguan Song, Xiaowei Liu   +6 more
openaire   +1 more source

Heterodiffusion of selenium in Bi2Te3

Physics Letters A, 1988
Abstract We present results for the anisotropic diffusion coefficient of selenium, isoelectronic impurity, in Bi2Te3 along the solidus. The experimental conditions permitted us to obtain a definite stoichiometric deviation, and diffusion profiles were obtained by SIMS.
H. Scherrer, B. Hammou, J.P. Fleurial, S. Scherrer   +3 more
openaire   +1 more source

On the Band Structure of Bi2Te3

Semiconductors, 2019
For p-Bi2Te3 crystals grown by the Czochralski method, the temperature dependences of the conductivity, Hall coefficient, thermoelectric power (α), and transverse Nernst–Ettingshausen coefficient are obtained experimentally in the temperature range 77–450 K. The transmittance spectrum in the range 400–5250 cm–1 is recorded at room temperature.
S. A. Nemov, Yu. V. Ulashkevich, A. A. Rulimov, A. E. Demchenko, A. A. Allahkhah, I. V. Sveshnikov, M. Dzhafarov   +6 more
openaire   +1 more source

Electrodeposition of Bi2Te3 films

AIP Conference Proceedings, 1994
The Bi2Te3 and its derivative compounds are very interesting materials in the field of thermoelectric refrigeration at room temperature. An electrochemical deposition that is an alternative process of the standard synthesis is developed in our laboratory.
P. Magri, C. Boulanger, J. M. Lecuire
openaire   +1 more source

Electronic structure and thermoelectric properties of Bi2Te3 crystals and graphene-doped Bi2Te3

Thin Solid Films, 2010
The electronic structure and thermoelectric properties of Bi2Te3 single crystals and graphene-doped Bi2Te3 polycrystalline samples were investigated with the aid of first-principles calculations, X-ray diffraction, scanning electron microscopy, Rietveld refinement, and thermal and transport measurements.
Li, A.H, Shahbazi, Mahboobeh, Zhou, Sihai, Wang, Guoxiu, Zhang, Chao, Jood, Priyanka, Peleckis, Germanas, Du, Yi, Cheng, Zhenxiang, Wang, Xiaolin, Kuo, Y.K   +10 more
openaire   +2 more sources

Flash evaporated layers of (Bi2Te3–Bi2Se3)(N) and (Bi2Te3–Sb2Te3)(P)

Materials Science and Engineering: B, 1998
Abstract (Bi 2 Te 3 ) 0.9 (Bi 2 Se 3 ) 0.1 for N-type material powder and (Bi 2 Te 3 ) 0.25 (Sb 2 Te 3 ) 0.75 for P-type material powder were evaporated by a flash evaporation technique. We obtained a value of Z equal to 0.21×10 −4 K −1 for α =40 μV K −1 and ρ =50 μΩ·m for P-type material and Z of about 0.17×10 −3 K −1 for α =90 μV K −1
Foucaran, A., Sackda, A, Giani, Alain, Pascal-Delannoy, F., Boyer, A.   +4 more
openaire   +1 more source

Pulsed electrodeposition of Bi2Te3 and Bi2Te3/Te nanowire arrays from a DMSO solution

Electrochimica Acta, 2011
Abstract Dense, continuous and polycrystalline bismuth telluride (Bi 2 Te 3 ) nanowire arrays have been deposited from a DMSO solution containing Bi(NO 3 ) 3 ·5H 2 O and TeCl 4 in porous alumina templates by a pulse electrochemical method. The composition of the nanowire is dependent on the applied potential, and the composition distribution along a
Wen-Jin Li, Way-Ling Yu, Chia-Ying Yen
openaire   +1 more source

The Tl2Te3-Bi2Te3 System

Journal of Applied Physics, 1966
The pseudobinary system Tl2Te3-Bi2Te3 was studied by means of microscopy, differential thermal analysis, and x-ray diffraction. No ternary compounds are found within the system. In particular, we do not find the compound TlBiTe3 previously reported by Borisova, Efremova, and Vlasov.
Donald P. Spitzer, James A. Sykes
openaire   +1 more source

Plasma Edge in Bi2Te3

Journal of Applied Physics, 1963
The reflectance minima associated with the free carrier plasma edges in p- and n-type Bi2Te3 have been observed at 78° and 300°K. The data together with the measured Hall and Seebeck coefficients have yielded combined band structure-relaxation time parameters when proper account is taken of the anisotropy.
Robert Sehr, Louis R. Testardi
openaire   +1 more source