Results 181 to 190 of about 14,384 (217)

Flash evaporated layers of (Bi2Te3–Bi2Se3)(N) and (Bi2Te3–Sb2Te3)(P)

Materials Science and Engineering: B, 1998
Abstract (Bi 2 Te 3 ) 0.9 (Bi 2 Se 3 ) 0.1 for N-type material powder and (Bi 2 Te 3 ) 0.25 (Sb 2 Te 3 ) 0.75 for P-type material powder were evaporated by a flash evaporation technique. We obtained a value of Z equal to 0.21×10 −4 K −1 for α =40 μV K −1 and ρ =50 μΩ·m for P-type material and Z of about 0.17×10 −3 K −1 for α =90 μV K −1
Foucaran, A., Sackda, A, Giani, Alain, Pascal-Delannoy, F., Boyer, A.   +4 more
openaire   +1 more source

Research on power factor of BNNT/Bi2Te3 and BCNNT/Bi2Te3 nanocomposite films

Journal of Nanoparticle Research, 2020
Thermoelectric (TE) material nanocomposite film is widely used in the design of many kinds of wearable flexible device and portable sensors. Herein, BNNT/Bi2Te3 and BCNNT/Bi2Te3 TE nanocomposite films were successfully fabricated by a cost-effective hot pressing and millipore membrane filter (HPMMF) method.
Ling Li, Xiangqian Jiang, Chuncheng Ban, Dequan Xie, Weiping Chen, Keguan Song, Xiaowei Liu   +6 more
openaire   +1 more source

The Tl2Te3-Bi2Te3 System

Journal of Applied Physics, 1966
The pseudobinary system Tl2Te3-Bi2Te3 was studied by means of microscopy, differential thermal analysis, and x-ray diffraction. No ternary compounds are found within the system. In particular, we do not find the compound TlBiTe3 previously reported by Borisova, Efremova, and Vlasov.
Donald P. Spitzer, James A. Sykes
openaire   +1 more source

Electrodeposition of Bi2Te3 films

AIP Conference Proceedings, 1994
The Bi2Te3 and its derivative compounds are very interesting materials in the field of thermoelectric refrigeration at room temperature. An electrochemical deposition that is an alternative process of the standard synthesis is developed in our laboratory.
P. Magri, C. Boulanger, J. M. Lecuire
openaire   +1 more source

Plasma Edge in Bi2Te3

Journal of Applied Physics, 1963
The reflectance minima associated with the free carrier plasma edges in p- and n-type Bi2Te3 have been observed at 78° and 300°K. The data together with the measured Hall and Seebeck coefficients have yielded combined band structure-relaxation time parameters when proper account is taken of the anisotropy.
Robert Sehr, Louis R. Testardi
openaire   +1 more source

Electronic structure and thermoelectric properties of Bi2Te3 crystals and graphene-doped Bi2Te3

Thin Solid Films, 2010
The electronic structure and thermoelectric properties of Bi2Te3 single crystals and graphene-doped Bi2Te3 polycrystalline samples were investigated with the aid of first-principles calculations, X-ray diffraction, scanning electron microscopy, Rietveld refinement, and thermal and transport measurements.
Li, A.H, Shahbazi, Mahboobeh, Zhou, Sihai, Wang, Guoxiu, Zhang, Chao, Jood, Priyanka, Peleckis, Germanas, Du, Yi, Cheng, Zhenxiang, Wang, Xiaolin, Kuo, Y.K   +10 more
openaire   +2 more sources

Three-Dimensional Bi2Te3 Nanocrystallites Embedded in 2D Bi2Te3 Films Grown by MOCVD

Journal of Electronic Materials, 2012
Two- (2D) and three-dimensional (3D) growth of nanostructured Bi2Te3 films was performed on 4° tilt (100) GaAs substrates using a metalorganic chemical vapor deposition system. To obtain 3D Bi2Te3 crystallites embedded in 2D planar film, we alternately changed the gas flow rate in the reactor.
HyunWoo You, Seung Hyub Baek, Chang Kyo Kim, Ho-Ki Lyeo, Chan Park, Jin-Sang Kim   +5 more
openaire   +1 more source

Bi2Te3–Te nanocomposite formed by epitaxial growth of Bi2Te3 sheets on Te rod

Journal of Solid State Chemistry, 2006
Abstract Single-crystal Bi 2 Te 3 –Te nanocomposites with heterostructure were synthesized using a two-step solvothermal process in the presence of ethylenediaminetetraacetic acid disodium salt. The first step is the formation of the Te nanorods and the second step is to grow the Bi 2 Te 3 sheets off the Te rods surface to form the Bi 2 Te 3 –Te ...
Yuan Deng, Chang-Wei Cui, Ni-La Zhang, Tian-Hao Ji, Qing-Lin Yang, Lin Guo   +5 more
openaire   +1 more source

Pulsed electrodeposition of Bi2Te3 and Bi2Te3/Te nanowire arrays from a DMSO solution

Electrochimica Acta, 2011
Abstract Dense, continuous and polycrystalline bismuth telluride (Bi 2 Te 3 ) nanowire arrays have been deposited from a DMSO solution containing Bi(NO 3 ) 3 ·5H 2 O and TeCl 4 in porous alumina templates by a pulse electrochemical method. The composition of the nanowire is dependent on the applied potential, and the composition distribution along a
Wen-Jin Li, Way-Ling Yu, Chia-Ying Yen
openaire   +1 more source

Electropolishing of Bi2Te3 based alloys

Materials Chemistry and Physics, 2001
Abstract Polarography has been used as a tool for controlling the electropolishing of p-type Bi0.5Sb1.5Te3.0 and n-type Bi2Se0.3Te2.7: 0.2 wt.% SbI3 semiconducting materials used in thermoelectric coolers at particular current density in terms of electropolished film thickness preceded by the electroetching of these materials in suitable electrolytes,
K.C. Tewari, V.K. Gandotra, M.V.G. Padmavati, Anupama Singh, A.G. Vedeshwar   +4 more
openaire   +1 more source