Results 181 to 190 of about 6,758 (243)

Ultrahigh mobility and Rashba spin splitting in Sb-substituted bismuth telluride and bismuth selenide.

Nanoscale
Kavkhani R, Akgenc Hanedar B, Anar K, Şahin Aİ, Johansson A, Onbaşlı MC.   +5 more
europepmc   +1 more source

Ink-Printed Thermoelectric Materials and Devices: Material Preparation, Fabrication Techniques, and Applications. [PDF]

Small Sci
Shao J, Li L, Yang M, Huang J, Zhang N, Pinitsoontorn S, Sun Q, Luo H, Wu H.   +8 more
europepmc   +1 more source

Generalizable growth of 2D twisted transition metal dichalcogenide heterostructures under non-equilibrium thermodynamic conditions. [PDF]

Nat Commun
Qin Q, Li X, Li W, Chen W, Zhang S, Chen S, Luo Z, Hua Z, Zhang L, Xi W, Xie W, Shen D, Li B, Liu Y, Li J, Wu R, Duan X.   +16 more
europepmc   +1 more source

A Generalized Automated Framework for Thermal Characterization: From Bulk Materials to Complex Heterostructures. [PDF]

Small
Tenaguillo MÁ, Pérez-Picazo E, Caballero-Calero O, Manzano CV, Martin-González M.   +4 more
europepmc   +1 more source

Thermoelectric properties of Co4Sb12 with Bi2Te3 nanoinclusions.

Journal of physics. Condensed matter : an Institute of Physics journal, 2018
The figure of merit (zT) of a thermoelectric material can be enhanced by incorporation of nanoinclusions into bulk material. The presence of bismuth telluride (Bi2Te3) nanoinclusions in Co4Sb12 leads to lower phonon thermal conductivity by introducing interfaces and defects; it enhances the average zT between 300-700 K.
Ghosh, Sanyukta, Bisht, Anuj, Karati, Anirudha, Rogl, Gerda, Rogl, Peter, Murty, B S, Suwas, Satyam, Mallik, Ramesh Chandra   +7 more
openaire   +4 more sources

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Bi2Te3 filaments via extrusion and pressureless sintering of Bi2Te3-based inks

MRS Communications, 2021
Inks containing sub-20 µm particles of doped bismuth telluride (n-type Bi2Te2.73Se0.3 or p-type (Bi0.5Sb1.5)Te3) are extruded into 330 µm diameter filaments. When solid-state sintered up to 857 K under no pressure, the filaments only partially densify, with over 20% porosity remaining.
Christoph Kenel, Nicholas R. Geisendorfer, Jun Peng, Matthew A. Grayson, David C. Dunand   +4 more
openaire   +1 more source

Liquation phenomena in Sn/Bi2Te3, In/Bi2Te3 and Cu/Bi2Te3 couples

Acta Materialia, 2020
Abstract Bi2Te3-based materials are the most commonly used materials in commercial thermoelectric devices. There are many joints in thermoelectric devices, thus knowledge of interfacial reactions with Bi2Te3 substrate is important. Interfacial reactions are examined in the following couples, Sn/Bi2Te3 at 160 °C, In/Bi2Te3 at 140 °C and Cu/Bi2Te3 at ...
Sinn-wen Chen, Yohanes Hutabalian, Zi-kai Hu, Hsu-hui Chen, Hao-wei Shih, Wei Wang   +5 more
openaire   +1 more source

Enhanced Thermoelectric Performance of Nanostructured Bi2Te3 through Significant Phonon Scattering

ACS Applied Materials & Interfaces, 2015
N-type Bi2Te3 nanostructures were synthesized using a solvothermal method and in turn sintered using sparking plasma sintering. The sintered n-type Bi2Te3 pellets reserved nanosized grains and showed an ultralow lattice thermal conductivity (∼0.2 W m–1 K–
Guang Han, Zhigang Chen, Jin Zou
exaly   +2 more sources

Research on power factor of BNNT/Bi2Te3 and BCNNT/Bi2Te3 nanocomposite films

Journal of Nanoparticle Research, 2020
Thermoelectric (TE) material nanocomposite film is widely used in the design of many kinds of wearable flexible device and portable sensors. Herein, BNNT/Bi2Te3 and BCNNT/Bi2Te3 TE nanocomposite films were successfully fabricated by a cost-effective hot pressing and millipore membrane filter (HPMMF) method.
Ling Li, Xiangqian Jiang, Chuncheng Ban, Dequan Xie, Weiping Chen, Keguan Song, Xiaowei Liu   +6 more
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Flash evaporated layers of (Bi2Te3–Bi2Se3)(N) and (Bi2Te3–Sb2Te3)(P)

Materials Science and Engineering: B, 1998
Abstract (Bi 2 Te 3 ) 0.9 (Bi 2 Se 3 ) 0.1 for N-type material powder and (Bi 2 Te 3 ) 0.25 (Sb 2 Te 3 ) 0.75 for P-type material powder were evaporated by a flash evaporation technique. We obtained a value of Z equal to 0.21×10 −4 K −1 for α =40 μV K −1 and ρ =50 μΩ·m for P-type material and Z of about 0.17×10 −3 K −1 for α =90 μV K −1
Foucaran, A., Sackda, A, Giani, Alain, Pascal-Delannoy, F., Boyer, A.   +4 more
openaire   +1 more source