Results 241 to 250 of about 1,818,251 (309)
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand +13 more
wiley +1 more source
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang +11 more
wiley +1 more source
Electrostatic Superlattices Beyond 1:1 Stoichiometry
Polymer‐mediated charge regulation drives two hierarchical routes to higher‐stoichiometry nanoparticle superlattices. Tuning the polymer's molecular weight promotes progressive interstitial filling, transforming ZnS into the fully occupied CaF2${\rm CaF}_2$ lattice. Exchanging polymer assignment between large and small nanoparticles instead breaks CsCl
Binay P. Nayak +7 more
wiley +1 more source
Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin +7 more
wiley +1 more source
Physics‐Grounded Materials Artificial Intelligence for Reliable Materials Discovery
Physics‐Grounded Materials AI (PhysMat AI) integrates physical priors, descriptors, constraints, verification, and data infrastructure into a unified full‐stack framework, enabling reliable, interpretable, and autonomous AI‐driven materials discovery.
Yuhang Wang +3 more
wiley +1 more source
Bias correction for inverse variance weighting Mendelian randomization
Mounier N, Kutalik Z.
europepmc +1 more source
Autonomous scanning probe microscopy and multi‐objective Bayesian optimization navigate a ternary (Al,Sc,B)N combinatorial library. Registered photoluminescence, electron‐probe compositional mapping, and X‐ray diffraction connect local electromechanical function to defect‐sensitive emission, composition, and crystal structure.
Yu Liu +12 more
wiley +1 more source
Electrically Induced Phase Transition and Synaptic Functionality in MoTe2/Graphene Memristors
An electrically induced reversible 2H ↔ 1T′ phase transition is demonstrated in a vertical Au/Ti/MoTe2/graphene memristor with a laterally contacted graphene electrode. Resistive switching proceeds through a compositionally invariant amorphous/2H ↔ amorphous/1T′ transformation, in which a self‐formed amorphous MoTe2 interfacial region is proposed to ...
Chien‐Hua Wang +7 more
wiley +1 more source
Schematic illustration of LNP‐MPG nuclei‐targeting delivery of HMW‐FGF2 promoting histone acetylation to regulate the fate of DPSCs and treat spinal cord injury. LNPs components include pHMW‐FGF2 plasmid, DSPC, Dlin‐MC3‐DMA, cholesterol, and PEG2000, and are modified with MPG to form HMW‐FGF2@LNP‐MPG (HLM). HLM nuclei‐targets DPSCs to deliver HMW‐FGF2,
Heng Zhou +6 more
wiley +1 more source

