Results 191 to 200 of about 2,290 (262)

Low‐Temperature Processed Optoelectronic Synapses With Enhanced Responsivity for Edge‐Oriented In‐Sensor Reservoir Computing

open access: yesAdvanced Materials Technologies, EarlyView.
Image pixels are converted into optical pulse sequences to stimulate the optoelectronic synaptic device, generating dynamic responses that form high‐dimensional features. These features improve classification efficiency and demonstrate strong potential for neuromorphic edge computing systems.
Jo‐Lin Chen   +3 more
wiley   +1 more source

Decoupling the Impact of Deep‐Trap and Band‐Tail States on PbS Quantum Dot Photodetectors via Alkylamine Engineering

open access: yesAdvanced Materials Technologies, EarlyView.
Band‐tail and deep trap states are effectively disentangled through the use of selective alkylamine additives. PA‐driven 2D ordering narrows band tails, while HA enhances halide passivation and Pb coordination to suppress deep traps. A comparative study of their CQD short‐wave infrared (SWIR) photodetectors further reveals whether band‐tail states or ...
Huaying Zhong   +14 more
wiley   +1 more source

Bidirectional Process Prediction in the Laser‐Induced‐Graphene Production Using Blackbox Deep Learning

open access: yesAdvanced Materials Technologies, EarlyView.
This study shows that a lightweight blackbox neural network provides a practical, cost‐effective solution for bidirectional process prediction in laser‐induced graphene (LIG) fabrication. Achieving high predictive performance with minimal overhead, the approach democratizes machine learning (ML) for resource‐limited environments.
Maxim Polomoshnov   +3 more
wiley   +1 more source

Aluminum Oxynitride‐Engineered Transparent Aluminum Nitride Resistive Memory for Low‐Leakage Multilevel Switching in Micro‐LED Pixels

open access: yesAdvanced Materials Technologies, EarlyView.
An AlON interfacial layer is engineered within an AlN switching layer to enable transparent RRAM with four stable resistance states. The device achieves low‐voltage multilevel switching and a high HRS, allowing precise grayscale modulation and preventing light leakage in micro‐LEDs operated at VDD = 2.7 V.
Sung Keun Choi   +7 more
wiley   +1 more source

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