Results 111 to 120 of about 256,848 (192)

Molecular interplay between glycogen synthase kinase 3 beta and A-kinase anchoring protein 11 in bipolar disorder: a narrative review. [PDF]

Front Mol Neurosci
Ashvil A, Patil P, Bhat SU, Mateti UV, Pinto A, Gopinath DC, Joel JJ.   +6 more
europepmc   +1 more source

Bipolar anxiety

Revista de Psiquiatría y Salud Mental (English Edition), 2009
Goodwin, G, Holmes, E
openaire   +3 more sources

The Influence of Residual Ion Drift During Programming of Chip‐Integrated Nanoscale HfO2‐Based Memristive Devices

Advanced Electronic Materials, EarlyView.
1T1R‐arrays combining filamentary‐type memristors and CMOS transistors offer great potential for energy‐efficient analog hardware accelerators. Here, transient SET analysis of nanoscale HfO2 memristors integrated on 180 nm CMOS wafers is discussed.
Oliver Artner, Felix Cüppers, Seokki Son, Yang Chen, Xiaohua Liu, Christopher Bengel, Dennis Nielinger, André Zambanini, Stefan Wiefels, Stephan Menzel, Regina Dittmann, Susanne Hoffmann‐Eifert   +11 more
wiley   +1 more source

Neuroinflammation and white matter microstructure as mediators of cognitive deficits in offspring of parents with bipolar disorder. [PDF]

Brain Commun
Li X, Zou W, Shao R, Lu W, Chao L, Zhao X, Su KP, Lin K.   +7 more
europepmc   +1 more source

Environmental Effects on RRAM Cells Based on 2D Halide Perovskite Materials

Advanced Electronic Materials, EarlyView.
RRAM offers high speed, scalability, and low power, positioning it as a next‐generation non‐volatile memory. Two‐dimensional halide perovskites show promise due to tunable optoelectronic properties and flexible processing but suffer from environmental sensitivity. This review examines degradation from humidity, temperature, light, and strain, discusses
Mojtaba Joodaki, Babitha Arun, Hartmut Hillmer, Chih‐Chieh Hsu   +3 more
wiley   +1 more source

Linear and Programmable Long‐Term Plasticity in PECVD Amorphous SiC Memristors

Advanced Electronic Materials, EarlyView.
Stoichiometry‐engineered PECVD amorphous SiC memristors exhibit highly linear and programmable long‐term synaptic plasticity with a nonlinearity as low as 0.08. By controlling the local bonding environment, stable multilevel conductance updates are achieved, enabling robust neural‐network classification on MNIST and CIFAR‐10 and highlighting amorphous ...
Qin Liu, Omesh Kapur, Bohao Ding, Fangnan Chen, Bingkai Ding, Ruomeng Huang, C. H. Kees de Groot   +6 more
wiley   +1 more source

X‐Ray TID Suppresses Inhibitory Plasticity of SnO‐Based Memristors and Its Impact on Neuromorphic Computation

Advanced Electronic Materials, EarlyView.
X‐ray irradiation suppresses inhibitory plasticity in SnO‐based volatile memristors, reducing nonlinearity and variability while improving neuromorphic learning accuracy. Despite a reduced dynamic range, irradiated devices achieve more stable and linear synaptic updates, leading to enhanced CNN performance.
Aiden Graham, Zohreh Hajiabadi, Alexander H. Wang, Asep Nugroho, Om K. Prasad, Uma Sankar Rout, Christian Patzig, Irwan Purnama, Liam Godfrey, Marcello Borri, Bingkai Ding, Harold M. H. Chong, Firman M. Simanjuntak   +12 more
wiley   +1 more source

Pulse‐Engineered Synaptic Linearity and Non‐Volatile Memory in MoO3/TiO2 Bilayer Memristors for Neuromorphic Image Recognition

Advanced Electronic Materials, EarlyView.
Pulse‐protocol optimization in an Au/MoO3/TiO2/FTO bilayer memristor enables linear analog synaptic conductance modulation along with digital resistive switching for memory. Controlled filament evolution produces stable learning‐forgetting characteristics with low nonlinearity, resulting in significantly enhanced neural network inference accuracy for ...
Girish Chandrashekar, Atul Thakre, R. Thamankar   +2 more
wiley   +1 more source

Manic episode following lurasidone initiation in bipolar I disorder: a case report. [PDF]

Front Psychiatry
Alzain NM, Al-Awad FA, Alzahrani SA, Almsned FM.   +3 more
europepmc   +1 more source

Determining the Relationship Between Composition, Structure, and Device Properties of GexSe1‐x‐Based Selector‐Only Memory

Advanced Electronic Materials, EarlyView.
Composition‐dependent structural evolution in GeXSe1‐X selector‐only memory (SOM) is correlated with device switching behavior. Increasing Ge strengthens network rigidity, suppresses atomic motion, and stabilizes threshold switching, while narrowing the memory window. The revealed structure–property relationship provides a guideline for compositionally
Tien Anh Nguyen, Changdeok Han, Dipannita Ghosh, Suyong Chae, Moongyu Choi, Sanghyun Ban, Myoungsub Kim, Sangmin Yoo, Seung Hwan Lee, Sieun Chae   +9 more
wiley   +1 more source