Results 231 to 240 of about 3,252,903 (268)

Bipolar-charge-transporting organic photoconductors

Journal of Applied Physics, 1991
A new class of bipolar-charge-transporting molecularly-doped polymers has been developed. The materials are ternary solid solutions comprised of 3,5-dimethyl-3′,5′-di-tert-butyl-4,4′-diphenoquinone (MBDQ), N,N,N′,N′-tetrakis (m-methylphenyl)-1, 3-diaminobenzene (PDA), and poly(4,4′-cyclohexylidenediphenyl carbonate) (PC-Z).
Yasuhiro Yamaguchi, Takahiro Fujiyama, Masaaki Yokoyama   +2 more
openaire   +1 more source

Bipolar charge transport in an organic photorefractive composite

Applied Physics Letters, 2007
The authors report on tuning the near-infrared holographic recording speed in a poly(N-vinylcarbazole) based photorefractive composite by illuminating it at a wavelength of very strong absorption. Due to the small penetration depth of the light under these conditions this approach allows to flood the material with charge carriers from the side of the ...
Michael Salvador, Francisco Gallego-Gomez, Sebastian Köber, Klaus Meerholz   +3 more
openaire   +1 more source

Simulation of bipolar charge transport in nanocomposite polymer films

Journal of Applied Physics, 2015
This paper describes 3D particle-in-cell simulation of bipolar charge injection and transport through nanocomposite film comprised of ferroelectric ceramic nanofillers in an amorphous polymer matrix. The classical electrical double layer (EDL) model for a monopolar core is extended (eEDL) to represent the nanofiller by replacing it with a dipolar core.
Meng H. Lean, Wei-Ping L. Chu
openaire   +1 more source

Bipolar charge transport and hologram fixing in KNbO3 crystals

Topical Meeting on Photorefractive Materials, Effects, and Devices II, 1990
The dark decay time of volume phase holograms recorded in photorefractive potassium niobate crystals mainly depends on the dark conductivity of the material. Self-erasure time constants between some microseconds and a few seconds are observed in general in KNbO3.
G. Montemezzani, P. Günter
openaire   +1 more source

Space Charge and Transport of Nonequilibrium Carriers in Bipolar Semiconductors

2006 3rd International Conference on Electrical and Electronics Engineering, 2006
In this work we present results concerning the fundamental equations of charge carrier transport in semiconductor structures. We discuss a correct modeling of the recombination terms that do not violate the charge conservation law. We obtained that under stationary conditions and equal generation rates of electrons and holes the recombination rates of ...
Yu. Gurevich, J.e. Velazquez-Perez, O. Titov   +2 more
openaire   +1 more source

Mechanisms of charge carriers nonequilibrium in transport processes in bipolar semiconductors

Current Applied Physics, 2016
Abstract The interplay between physical origins of the nonequilibrium and their influence on the linear steady state transport processes in bipolar semiconductors are under investigation. Particular attention is paid to the influence of the energy nonequilibrium on the generation-recombination processes under various conditions.
I.N. Volovichev, Yu.G. Gurevich
openaire   +1 more source

Transport of Non-Equilibrium Charge Carriers in Bipolar Semiconductor Materials

2006 25th International Conference on Microelectronics, 2006
In this work we present results concerning the fundamental equations of charge carrier transport in semiconductor structures. We discuss the modeling of the recombination term in the charge transport equations for each type of carriers that respects the charge conservation law. It was obtained that under stationary conditions and equal generation rates
Y.G. Gurevich, J.E. Velazquez-Perez
openaire   +1 more source

A unified analytical model for charge transport in Heterojunction Bipolar Transistors

Solid-State Electronics, 2004
Abstract A unified analytical charge transport model of HBTs, which is applicable for a wide variety of emitter-base (e–b) structures of HBTs, viz. abrupt or graded heterojunctions and p–n junctions displaced into wider or narrower band gap material is proposed.
K Venkateswara Reddy, Amitava DasGupta
openaire   +1 more source

Roughness Enhanced Charge Injection and Field Dependent Conduction Mechanisms for Bipolar Charge Transport Models

2020 IEEE 3rd International Conference on Dielectrics (ICD), 2020
Extruded HVDC cable systems contain a multitude of different interface types. Physical interfaces are introduced on-site when the outer semi-conductive layer is removed prior to installing a pre-molded joint or stress-cone onto the cable end. Such interfaces are characterized by surface roughness, which can locally enhance electric field and stimulate ...
E.H. Doedens, E. M. Jarvid, Y. V. Serdyuk   +2 more
openaire   +1 more source

Bipolar charge transport analysis in high voltage stressed dielectrics

Conference on Electrical Insulation & Dielectric Phenomena - Annual Report 1985, 1985
Modern pulse power machines commonly use deionized water in intermediate energy storage capacitors. Recent work has shown that charge injection phenomena can play an important role in determining the limits of performance of the dielectric [1]. For unipolar conduction, this anomalous behavior was shown to be due to injected charge that increases the ...
Markus Zahn, Jorge Mescua
openaire   +1 more source