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Bipolar charge transport in an organic photorefractive composite
Applied Physics Letters, 2007The authors report on tuning the near-infrared holographic recording speed in a poly(N-vinylcarbazole) based photorefractive composite by illuminating it at a wavelength of very strong absorption. Due to the small penetration depth of the light under these conditions this approach allows to flood the material with charge carriers from the side of the ...
Michael Salvador +3 more
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Bipolar charge transport and hologram fixing in KNbO3 crystals
Topical Meeting on Photorefractive Materials, Effects, and Devices II, 1990The dark decay time of volume phase holograms recorded in photorefractive potassium niobate crystals mainly depends on the dark conductivity of the material. Self-erasure time constants between some microseconds and a few seconds are observed in general in KNbO3.
G. Montemezzani, P. Günter
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Preparation of bipolar metal oxide charge transporting layers for perovskite photovoltaics
Organic, Hybrid, and Perovskite Photovoltaics XXII, 2021We present a high-energy wet-milling grinding method to prepare the NiO NPs at a room temperature and a low-temperature solution-processing method for the intercalation of Cs2CO3 into NiO, resulting in bipolar charge-carrier extraction capability for inverted (p–i–n) and conventional planar (n–i–p) PSCs.
Mriganka Singh +4 more
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Simulation of bipolar charge transport in nanocomposite polymer films
Journal of Applied Physics, 2015This paper describes 3D particle-in-cell simulation of bipolar charge injection and transport through nanocomposite film comprised of ferroelectric ceramic nanofillers in an amorphous polymer matrix. The classical electrical double layer (EDL) model for a monopolar core is extended (eEDL) to represent the nanofiller by replacing it with a dipolar core.
Meng H. Lean, Wei-Ping L. Chu
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Simulation of bipolar charge transport in graphene on h-BN
COMPEL - The international journal for computation and mathematics in electrical and electronic engineering, 2020Purpose The purpose of this paper is to simulate charge transport in monolayer graphene on a substrate made of hexagonal boron nitride (h-BN). This choice is motivated by the fact that h-BN is one of the most promising substrates on account of the reduced degradation of the velocity due to the remote impurities.
Coco, Marco, Nastasi, Giovanni
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Bipolar charge transport analysis in high voltage stressed dielectrics
Conference on Electrical Insulation & Dielectric Phenomena - Annual Report 1985, 1985Modern pulse power machines commonly use deionized water in intermediate energy storage capacitors. Recent work has shown that charge injection phenomena can play an important role in determining the limits of performance of the dielectric [1]. For unipolar conduction, this anomalous behavior was shown to be due to injected charge that increases the ...
Markus Zahn, Jorge Mescua
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2020 IEEE 3rd International Conference on Dielectrics (ICD), 2020
Extruded HVDC cable systems contain a multitude of different interface types. Physical interfaces are introduced on-site when the outer semi-conductive layer is removed prior to installing a pre-molded joint or stress-cone onto the cable end. Such interfaces are characterized by surface roughness, which can locally enhance electric field and stimulate ...
E.H. Doedens +2 more
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Extruded HVDC cable systems contain a multitude of different interface types. Physical interfaces are introduced on-site when the outer semi-conductive layer is removed prior to installing a pre-molded joint or stress-cone onto the cable end. Such interfaces are characterized by surface roughness, which can locally enhance electric field and stimulate ...
E.H. Doedens +2 more
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Space Charge and Transport of Nonequilibrium Carriers in Bipolar Semiconductors
2006 3rd International Conference on Electrical and Electronics Engineering, 2006In this work we present results concerning the fundamental equations of charge carrier transport in semiconductor structures. We discuss a correct modeling of the recombination terms that do not violate the charge conservation law. We obtained that under stationary conditions and equal generation rates of electrons and holes the recombination rates of ...
Yu. Gurevich +2 more
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Bipolar resistive switching and charge transport in silicon oxide memristor
Materials Science and Engineering: B, 2015Abstract Reproducible bipolar resistive switching has been studied in SiO x -based thin-film memristor structures deposited by magnetron sputtering technique on the TiN/Ti metalized SiO 2 /Si substrates. It is established that, after electroforming, the structure can be switched between the quasi-ohmic low-resistance state related to silicon chains
Alexey N. Mikhaylov +14 more
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Transport of Non-Equilibrium Charge Carriers in Bipolar Semiconductor Materials
2006 25th International Conference on Microelectronics, 2006In this work we present results concerning the fundamental equations of charge carrier transport in semiconductor structures. We discuss the modeling of the recombination term in the charge transport equations for each type of carriers that respects the charge conservation law. It was obtained that under stationary conditions and equal generation rates
Y.G. Gurevich, J.E. Velazquez-Perez
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