Results 91 to 100 of about 206 (188)

Asymmetric Electrostrain/Electrobending in Piezoelectric Ceramics: Role of Defect Dipoles or Oxygen Vacancies

Advanced Science, EarlyView.
Defect‐configurational origins of the asymmetric apparent electrostrain are revealed in different piezoelectric ceramics via atomic‐scale visualization of defect configurations. Migration of oxygen vacancies leads to the electrobending effect in N2‐sintered BaTiO3, while defect dipoles in Ba0.99TiO2.99 generate true asymmetric electrostrain without ...
Jie Wang, Geng Huangfu, Hongjie Zhang, Tiannan Yang, Zhenhua Ma, Jingsheng Chen, Yun Liu, Yiping Guo   +7 more
wiley   +1 more source

Field‐Free Spin‐Splitting‐Torque Driven Stochastic Neuron Mimicking the Neuromorphic Imagination for High‐Performance Recognition

Advanced Science, EarlyView.
The human brain's imagination, which enables autonomous driving hazard avoidance by completing missing visual information, relies on Gaussian‐stochastic neuron. We report the altermagnetic RuO2 spintronic neurons integrating field‐free switching and intrinsic Gaussian stochasticity, building an all‐spin ANN for high‐quality image repairing and high ...
Junwei Zeng, Baoshan Cui, Xi Guo, Jiahao Liu, Xiaoyu Feng, Liang Fang, Li Xi, Xiaolong Fan, Xiaoxi Liu, Yang Guo   +9 more
wiley   +1 more source

An Embodied Paper‐Based Microfluidic Al‐Air Battery for Enduring Untethered Insect‐Scale Robots

Advanced Science, EarlyView.
This work presents a centimeter‐scale microfluidic aluminum–air battery (MFAAB) with dual‐surface anode and F−‐mediated byproduct decomposition. The design enables a high capacity of 2697.05 mAh/g Al and delivers tens of milliwatts to power LEDs, motors, and a toy car.
Yun Yang, Tao Jiang, Zhongyue Lu, Dapeng Fan, Zucheng Yi, Zirong Luo   +5 more
wiley   +1 more source

Multifaceted Roles of Tantalum in Promoting the Thermoelectric Performance of Mg3(Sb,Bi)2 Based Materials

Advanced Science, EarlyView.
A multifunctional tantalum incorporation strategy enables simultaneous tuning of carrier concentration, mitigation of grain‐boundary scattering, and enhanced phonon scattering in Mg3(Sb,Bi)2. These synergistic effects markedly improve carrier mobility and suppress lattice thermal conductivity, yielding both high material zT and high module conversion ...
Guangmeng You, Jingdan Lei, Kai Xu, Yuntian Fu, Xueke Gu, Chengxiao Peng, Zhen Wang, Jing Chen, Kunpeng Zhao, Chao Wang   +9 more
wiley   +1 more source

Reconfigurable Selector‐Only Memory (SOM) for Scalable Neuromorphic Computing

Advanced Science, EarlyView.
ABSTRACT Highly scalable reconfigurable neuromorphic devices are critical for addressing continual‐learning challenges in artificial intelligence. However, the scalability of existing reconfigurable devices is severely constrained by limited operating margins and insufficient process maturity.
Jin‐Yu Wen, Chuan‐Qi Yi, Ya‐Ru Zhang, Bin‐Hao Wang, Zi‐Xuan Liu, Chun‐Yu Zhou, Hao Tong, Xiang‐Shui Miao   +7 more
wiley   +1 more source

Dual‐Mode Nanoporous SiO2 Memristors with Coexisting Volatile and Nonvolatile Dynamics for Reservoir Computing

Advanced Science, EarlyView.
A nanoporous SiO2 memristor enabling reconfigurable volatile and non‐volatile switching within a single device is demonstrated. The dual‐mode functionality supports both physical reservoir dynamics and synaptic weight storage, allowing unified hardware implementation of reservoir computing for temporal information processing, including image and ...
Bohao Ding, Tongjun Zhang, Li Shao, Nikolay Zhelev, Andrew L. Hector, Ruomeng Huang   +5 more
wiley   +1 more source

Exfoliated‐MoS2 Gradual Resistive Switching Devices as Artificial Synapses

Advanced Electronic Materials, EarlyView.
A vertical memristor based on untreated, exfoliated MoS2 is presented, revealing gradual resistive switching governed by Schottky barrier modulation at the MoS2/metal interface from the trapping/detrapping of charges. Furthermore, the device emulates synaptic‐like plasticity functions, including: potentiation, depression, and spike‐amplitude‐dependent ...
Deianira Fejzaj, Richard Schroedter, Thomas Mikolajick, André Heinzig   +3 more
wiley   +1 more source

Ultralow Voltage Resistive Switching in Hafnium–Zirconium Oxide

Advanced Physics Research
Ultralow SET and RESET voltage are essential for high‐density, low‐power, and small heat dissipation nonvolatile random‐access memory (NVRAM) elements.
M. Asif, Rajib K. Rakshit, Ashok Kumar
doaj   +1 more source

Temperature‐Graded Deposition of HfZrOx for Ferroelectric Capacitors With Enhanced Polarization, Reliability, and Switching

Advanced Electronic Materials, EarlyView.
Temperature‐graded ALD of HfZrOx (HZO) enables strain‐enhanced stabilization of the ferroelectric o‐phase, achieving simultaneously high polarization, fast switching, and robust endurance in BEOL‐compatible FeCAPs. ABSTRACT Ferroelectric Hf0.5Zr0.5O2 (HZO) capacitors hold great promise for next‐generation nonvolatile memory and logic applications ...
Sheng‐Yen Zheng, Yin‐Chen Sun, Yu‐Cheng Kao, Hsin‐Yu Hsu, Pin‐Jiun Wu, Yung‐Hsien Wu   +5 more
wiley   +1 more source

Silicon Nitride Resistive Memories

Advanced Electronic Materials, EarlyView.
Amorphous SiNx is an attractive resistance switching material for ReRAM applications due to its physicochemical properties, such as humidity resistance, low oxygen diffusivity, and is used as a metal diffusion blocker. By modifying the ratio between N and Si atoms, the microstructure of the SiNx is affected, rendering it possible to change the ...
Alexandros‐Eleftherios Mavropoulis, Nikolaos Vasileiadis, Iosif‐Angelos Fyrigos, Emmanouil Stavroulakis, Caroline Bonafos, Pascal Normand, Georgios Ch. Sirakoulis, Panagiotis Dimitrakis   +7 more
wiley   +1 more source