Results 31 to 40 of about 16,417,442 (254)

Charge Injection in Gold Ground Electrode Corona Charged Polyethylene Film: Numerical Simulation on Surface Potential Decay [PDF]

, 2011
Surface potential decay measurement is a simple and low cost tool to examine electrical properties of insulation materials. Bipolar charge injection has been verified by the measurement of space charge in the corona-charged sample using the pulsed ...
Zhuang, Yuan, Rotaru, Mihai, Y. Zhuang, G. Chen, M. Rotaru, Chen, George   +5 more
core   +2 more sources

Space Charge Accumulation at Material Interfaces in HVDC Cable Insulation Part I—Experimental Study and Charge Injection Hypothesis

Energies, 2020
On-site installation of accessories on extruded polymeric high voltage cables in a common practice. The procedure requires the shaping of the physical interface between the cable insulation surface and the pre-molded accessory body.
Espen Doedens, E. Markus Jarvid, Raphaël Guffond, Yuriy V. Serdyuk   +3 more
doaj   +1 more source

Effect of XLPE/EPDM Interface on Space Charge Behavior in Cable Accessory

IEEE Access, 2019
Space charges accumulate easily at insulation interface of cable accessories, which cause different electric field distribution and aging characteristics compared to single-layered cable.
Mingxiao Zhu, Ying Gao, Jiming Chen, Jiacai Li, Qianyu Yu, Chaolin Li   +5 more
doaj   +1 more source

Characteristics of Surface Charge Accumulation on Direct Current GIL Insulators Under Different Dominant Mechanisms Considering Surface Trapping Effect

Shanghai Jiaotong Daxue xuebao
The existing mathematical models for charge accumulation at the gas-solid interface can hardly illustrate some microscopic mechanisms, which need improvement.
WANG Yaogang, WANG Zheming, LI Ke, JIA Bowen, YANG Hua, YAN Wu, LU Wu
doaj   +1 more source

Evaluation of Electric Field and Space Charge Dynamics in Dielectric under DC Voltage with Superimposed Switching Impulse

Energies, 2019
The influx of a switching impulse during DC steady-state operations causes severe electrical stress on the insulation of HVDC cables. Thus, the insulation should be designed to withstand a superimposed switching impulse.
Ik-Soo Kwon, Sun-Jin Kim, Mansoor Asif, Bang-Wook Lee   +3 more
doaj   +1 more source

A Modified Algorithm for the Simulation of Charge Behavior in Water Tree Aged Cross-Linked Polyethylene Cable

IEEE Access, 2018
In this paper, a modified algorithm is introduced to explain the process of charge formation in water tree aged cable insulation with respect to the dielectric properties of water tree areas and the cylindrical geometries of cable insulation.
Yu Zhang, Deyuan Liu, Jiandong Wu, Yi Yin   +3 more
doaj   +1 more source

Finite Element Analysis of the Breakdown Prediction for LDPE Stressed by Various Ramp Rates of DC Voltage Based on Molecular Displacement Model

Energies, 2020
Predicting the electrical breakdown of polymers is critical for certifying the endurance and lifetime of high voltage power equipment. Since various factors contribute nonlinearly to the breakdown phenomena of polymer insulators, it is difficult to ...
Minhee Kim, Su-Hun Kim, Se-Hee Lee
doaj   +1 more source

Removal of Sulfadiazine by Polyamide Nanofiltration Membranes: Measurement, Modeling, and Mechanisms

Membranes, 2021
In this study, a complete steric, electrostatic, and dielectric mass transfer model is applied to investigate the separation mechanism of typical antibiotic sulfadiazine by NF90, NF270, VNF-8040 and TMN20H-400 nanofiltration membranes.
Haochen Zhu, Bo Hu, Fengrui Yang
doaj   +1 more source

Stabilized Cubic GeTe With Matched Grain-Boundary Networks and Band Convergence for High-Performance Dual-Mode Thermoelectric Devices. [PDF]

Adv Sci (Weinh)
I‐doping stabilizes the cubic phase of GeTe and generates “electron‐transparent, phonon‐blocking” grain boundary networks while inducing valence‐band convergence. This synergistic structural‐electronic design enables effective electron‐phonon decoupling, achieving an exceptional average zTave of ∼1.62, a peak zT of ∼2.2, and enhanced mechanical ...
Tan X, Rao X, Ma H, Luo J, Feng F, Lin Z, Li R, Tian M, Huo S, Hong M, Ang R.   +10 more
europepmc   +2 more sources

Intermediate Resistive State in Wafer‐Scale Vertical MoS2 Memristors Through Lateral Silver Filament Growth for Artificial Synapse Applications

Advanced Functional Materials, EarlyView.
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa, Milan Buttberg, Ke Ran, Rana Walied Ahmad, Dennis Braun, Lukas Völkel, Jimin Lee, Sofía Cruces, Bart Macco, Bárbara Canto, Holger Lerch, Thorsten Wahlbrink, Holger Kalisch, Michael Heuken, Andrei Vescan, Joachim Mayer, Zhenxing Wang, Ilia Valov, Stephan Menzel, Max C. Lemme   +19 more
wiley   +1 more source