Results 131 to 140 of about 87,187 (276)
Radiation effects on three low-power microcircuits [PDF]
Irradiation of several low power circuit elements by Co-60 gamma radiation, low and high energy electrons, and neutrons is discussed. The bipolar circuits were SE480 Q NAND gate, and a micropower frequency divider was used in electronic wrist watches ...
Yamakawa, K. A.
core +1 more source
Investigation on Bipolar Degradation Caused by Micropipe in 3.3 kV SiC-MOSFET [PDF]
Hiroki Niwa +7 more
openalex +1 more source
Durable Thin‐Film Porous Transport Electrodes for High Current Density PEM Water Electrolysis
Water electrolysis using porous transport electrodes with sputter‐deposited, ionomer‐free thin films of rutile IrO2 catalyst suppresses Ir dissolution by >10x over other forms of IrOx. The rutile IrO2 catalyst prepared by this readily scalable electrode synthesis method provides stable cell operation at 3 A cm−2 while using low Ir loading (0.4 mg Ir cm−
James L. Young +18 more
wiley +1 more source
Degradation of SiC Bipolar Devices: A Review of Likely Causes and Recent Advances in its Understanding [PDF]
Pirouz Pirouz
openalex +1 more source
Analysis of Bipolar Integrated Circuit Degradation Mechanisms Against Combined TID–DD Effects [PDF]
Rudy Ferraro +3 more
openalex +1 more source
Tracing the evolution from structural regulation to multifunctional integration, this paper systematically analyzes modification strategies for carbon‐based electrodes. It evaluates how element doping, surface functionalization, and composite material design affect the electrode performance, and offers perspectives on future applications and challenges
Yunlei Wang +4 more
wiley +1 more source
Insulated gate bipolar transistors (IGBTs) are vulnerable components in electrified powertrain systems, considerably influencing inverter reliability and operational lifespan. Among their various failure mechanisms, bond-wire lift-off is a common package-
Jingyu Noh +4 more
doaj +1 more source
Degradation mechanisms in polysilicon emitter bipolar junction transistors for digital applications
L. Vendrame +5 more
openalex +2 more sources
The HfxZr1‐xO2‐based ferroelectric/antiferroelectric bilayer capacitor exhibits morphotropic‐phase‐boundary behavior with a high dielectric constant (∼52) at 2 V. Phase engineering stabilizes o/t‐phase coexistence and suppresses m‐phase formation, enabling capacitance enhancement and self‐optimization under cycling for scalable low‐voltage, high‐κ ...
Junseok Kim +5 more
wiley +1 more source

