Results 1 to 10 of about 30,596 (119)

History of Semiconductors

open access: yesJournal of Telecommunications and Information Technology, 2023
The history of semiconductors is presented beginning with the first documented observation of a semiconductor effect (Faraday), through the development of the first devices (point-contact rectifiers and transistors, early field-effect transistors) and ...
Lidia Łukasiak, Andrzej Jakubowski
doaj   +1 more source

Electric-Field Induced Doping Polarity Conversion in Top-Gated Transistor Based on Chemical Vapor Deposition of Graphene

open access: yesCrystals, 2022
The top-gated graphene field effect transistor (GFET) with electric-field induced doping polarity conversion has been demonstrated. The polarity of channel conductance in GFET can be transition from p-type to n-type through altering the gate electric ...
Songang Peng   +5 more
doaj   +1 more source

Nanowire-based synaptic devices for neuromorphic computing

open access: yesMaterials Futures, 2023
The traditional von Neumann structure computers cannot meet the demands of high-speed big data processing; therefore, neuromorphic computing has received a lot of interest in recent years.
Xue Chen   +5 more
doaj   +1 more source

DEVELOPMENT OF HUMIDITY MEASURER OF CUTTING MATERIALS [PDF]

open access: yesBiomedicinskaâ Inženeriâ i Èlektronika, 2017
The meter of moisture content of bulk materials is developed, which is characterized by high reliability and relatively low cost. Due to the improvement of the analogue circuit, the average lifespan of the elements of the circuit diagram and the ...
Litvinenko V.M., Andrienko A.O.
doaj   +1 more source

TESLA SWITCH OF 4 BATTERIES BASED ON THE ARDUINO UNO BOARD

open access: yesInformatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska, 2023
The paper considered the theoretical information of generators for several power sources, schematic their solutions, and the main disadvantages and advantages. A generator for 4 batteries based on field-effect transistors with optical galvanic isolation
Mykola Polishchuk   +4 more
doaj   +1 more source

Electronic and Optoelectronic Monolayer WSe2 Devices via Transfer-Free Fabrication Method

open access: yesNanomaterials, 2023
Monolayer transition metal dichalcogenides (TMDs) have drawn significant attention for their potential applications in electronics and optoelectronics.
Zixuan Wang   +10 more
doaj   +1 more source

Flexible high energy density zinc-ion batteries enabled by binder-free MnO2/reduced graphene oxide electrode

open access: yesnpj Flexible Electronics, 2018
Zinc-ion batteries: a carbon based promoter Simple carbon materials are shown to modify the MnO2 electrodes and greatly enhance the capacity and cyclability for zinc-ion batteries.
Yuan Huang   +11 more
doaj   +1 more source

Transistor Efek Medan Berbasis Semikonduktor Organik Pentacene untuk Sensor Kelembaban

open access: yesJurnal Nasional Teknik Elektro dan Teknologi Informasi, 2017
The purpose of this paper is to fabricate a humidity sensor from organic semiconductor and to understand the effect of the transistor`s structure on the sensitivity of humidity sensor.
Fadliondi, Budiyanto
doaj   +1 more source

BSIM-CMG compact model for IC CAD: from FinFET to Gate-All-Around FET Technology

open access: yesJournal of Microelectronic Manufacturing, 2020
We discuss the BSIM-CMG compact model for SPICE simulations of any common multi-gate (CMG) device. This is an industry standard model which has been used extensively for FinFETs IC design and simulation, and has now been extended to accurately model gate-
Avirup Dasgupta, Chenming Hu
doaj   +1 more source

Carbon Dot-Functionalized Solution-Gated Graphene Transistors for Highly Sensitive Detection of Cobalt(II) Ions

open access: yesChemosensors, 2023
A carbon dot-functionalized solution-gated graphene transistor (CD-SGGT) was designed and prepared via the modification of CDs on the gate of SGGT. The above CDs were hydrothermally synthesized using DL-thioctic acid and triethylenetramine as C, N and S ...
Zhanpeng Ren   +9 more
doaj   +1 more source

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