Results 31 to 40 of about 122,784 (308)
, 2016 The first chapter is meant to give a comprehensive overview of the fundamentals, state-of-the-art, challenges, and future trends in the field of high-frequency transistor modeling. Linear, as well as noise and nonlinear operations, are dealt with.
D.M.M.-P. Schreurs +11 more
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Controlling Nanostructure in Inkjet Printed Organic Transistors for Pressure Sensing Applications
Nanomaterials, 2021 This work reports the development of a highly sensitive pressure detector prepared by inkjet printing of electroactive organic semiconducting materials. The pressure sensing is achieved by incorporating a quantum tunnelling composite material composed of
Matthew J. Griffith +6 more
doaj +1 more source
Advanced Functional Materials, EarlyView.Shellac, a centuries‐old natural resin, is reimagined as a green material for flexible electronics. When combined with silver nanowires, shellac films deliver transparency, conductivity, and stability against humidity. These results position shellac as a sustainable alternative to synthetic polymers for transparent conductors in next‐generation ...
Rahaf Nafez Hussein +4 more
wiley +1 more source
Gas sensing using an organic/silicon hybrid field-effect transistor [PDF]
, 1996 This thesis describes the fabrication and properties of novel organic/silicon hybrid field-effect transistor gas sensors. Whilst most of the work used the emeraldine base form of the conductive polymer polyaniline, the response of a device incorporating ...
Barker, Paul Simon
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npj Flexible ElectronicsLarge-area electronic sensor and actuator arrays are suitable systems for thin-film transistor (TFT) technology with numerous applications from consumer electronics to healthcare. Considerable effort is being spent to make these arrays a reality. However,
Mauricio Velazquez Lopez +4 more
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Advanced Functional Materials, EarlyView.In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Um modelo eficiente do transistor MOS para o projeto de circuitos VLSI: [dissertação] [PDF]
, 2007 Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Engenharia Elétrica.Neste trabalho é detalhada a implementação do modelo ACM do transistor MOS no simulador elétrico ELDO (Mentor Graphics).
Siebel, Osmar Franca
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Enhanced electrodynamic gating in two-dimensional transistors using ferroelectric capping
Nano Express, 2023 Two-dimensional (2D) materials such as semiconductors and ferroelectrics are promising for future energy-efficient logic devices because of their extraordinary electronic properties at atomic thickness.
Hemendra Nath Jaiswal +10 more
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Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
Advanced Functional Materials, EarlyView.This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
Технологія та конструювання в електронній апаратурі, 2011 The research has been carried out on dependence of mechanical stress on the modes of deposition of silicon nitride and oxide films obtained by plasma excited chemical vapour deposition of the layers from the gas phase (PECVD).
I. I. Rubtsevich +4 more
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