Results 31 to 40 of about 396,204 (347)

Controlling Nanostructure in Inkjet Printed Organic Transistors for Pressure Sensing Applications

open access: yesNanomaterials, 2021
This work reports the development of a highly sensitive pressure detector prepared by inkjet printing of electroactive organic semiconducting materials. The pressure sensing is achieved by incorporating a quantum tunnelling composite material composed of
Matthew J. Griffith   +6 more
doaj   +1 more source

Printed Integrated Logic Circuits Based on Chitosan‐Gated Organic Transistors for Future Edible Systems

open access: yesAdvanced Functional Materials, EarlyView.
Edible electronics needs integrated logic circuits for computation and control. This work presents a potentially edible printed chitosan‐gated transistor with a design optimized for integration in circuits. Its implementation in integrated logic gates and circuits operating at low voltage (0.7 V) is demonstrated, as well as the compatibility with an ...
Giulia Coco   +8 more
wiley   +1 more source

Demonstration of an All‐Optical AND Gate Mediated by Photochromic Molecules

open access: yesAdvanced Functional Materials, EarlyView.
A logic AND gate that runs on photons is demonstrated. It relies on two spatially separated photochromic molecules that work in tandem. Abstract The realization of a photonic logic AND gate, i.e. a logic AND gate that runs on photons rather than electrons, and where all steps are controlled by light, is demonstrated. In a proof‐of‐principle experiment,
Heyou Zhang   +7 more
wiley   +1 more source

An algorithm for transistor sizing in CMOS circuits [PDF]

open access: yes, 1989
This paper describes a novel algorithm for automatic transistor sizing which is one technique for improving timing performance in CMOS circuits. The sizing algorithm is used to minimize area and power subject to timing constraints.
Gajski, Daniel   +2 more
core  

Enhanced electrodynamic gating in two-dimensional transistors using ferroelectric capping

open access: yesNano Express, 2023
Two-dimensional (2D) materials such as semiconductors and ferroelectrics are promising for future energy-efficient logic devices because of their extraordinary electronic properties at atomic thickness.
Hemendra Nath Jaiswal   +10 more
doaj   +1 more source

An economical arterial-pulse-wave transducer [PDF]

open access: yes, 1973
Transducer records arterial pulses externally. Device uses thin plastic membrane which is fluid coupled to pressure sensitive transistor. Transistor is connected to amplifier which, in turn, is connected to recorder.
Chen, W., Gorelick, D., Kim, C.
core   +1 more source

Laser‐Induced Graphene from Waste Almond Shells

open access: yesAdvanced Functional Materials, EarlyView.
Almond shells, an abundant agricultural by‐product, are repurposed to create a fully bioderived almond shell/chitosan composite (ASC) degradable in soil. ASC is converted into laser‐induced graphene (LIG) by laser scribing and proposed as a substrate for transient electronics.
Yulia Steksova   +9 more
wiley   +1 more source

Investigation of properties of nitride and silicon oxide films grown by plasma-chemical deposition on a silicon substrate

open access: yesТехнологія та конструювання в електронній апаратурі, 2011
The research has been carried out on dependence of mechanical stress on the modes of deposition of silicon nitride and oxide films obtained by plasma excited chemical vapour deposition of the layers from the gas phase (PECVD).
I. I. Rubtsevich   +4 more
doaj  

Control Strategy for Modular‐Structured Series‐Resonant Converters: Unifying Pulse‐Density Modulation and Phase‐Shift Control

open access: yesIET Power Electronics
The study proposes an advanced control technique for modular‐structured series‐resonant converters, unifying pulse‐density modulation (PDM) and phase‐shift control to mitigate output current amplitude fluctuations.
Pavlo Herasymenko   +3 more
doaj   +1 more source

Tuning of SnS Thin Film Conductivity on Annealing in an Open Air Environment for Transistor Application

open access: yesEast European Journal of Physics, 2020
The study aimed at enhancement and optimisation of SnS conductivity via annealing for field effect transistor’s semiconductor channel layer application. Interstitials and vacancies in SnS films are known to cause carrier traps which limit charge carriers
Thomas Daniel   +3 more
doaj   +1 more source

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