Results 31 to 40 of about 128,521 (301)
Shellac, a centuries‐old natural resin, is reimagined as a green material for flexible electronics. When combined with silver nanowires, shellac films deliver transparency, conductivity, and stability against humidity. These results position shellac as a sustainable alternative to synthetic polymers for transparent conductors in next‐generation ...
Rahaf Nafez Hussein +4 more
wiley +1 more source
Large-area electronic sensor and actuator arrays are suitable systems for thin-film transistor (TFT) technology with numerous applications from consumer electronics to healthcare. Considerable effort is being spent to make these arrays a reality. However,
Mauricio Velazquez Lopez +4 more
doaj +1 more source
In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Enhanced electrodynamic gating in two-dimensional transistors using ferroelectric capping
Two-dimensional (2D) materials such as semiconductors and ferroelectrics are promising for future energy-efficient logic devices because of their extraordinary electronic properties at atomic thickness.
Hemendra Nath Jaiswal +10 more
doaj +1 more source
Um modelo eficiente do transistor MOS para o projeto de circuitos VLSI: [dissertação] [PDF]
Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Engenharia Elétrica.Neste trabalho é detalhada a implementação do modelo ACM do transistor MOS no simulador elétrico ELDO (Mentor Graphics).
Siebel, Osmar Franca
core
Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
The application of neuMOS transistors to enhanced Built-in Self-Test (BIST) and product quality [PDF]
The neuMOS transistor is a comparatively new device developed in 1991 at Tohoku University, Japan, which is currently showing great promise in the direction of enhanced circuit functionality, particularly in Neural Network applications.
Richardson, Andrew, Nicholson, Richard
core +4 more sources
The research has been carried out on dependence of mechanical stress on the modes of deposition of silicon nitride and oxide films obtained by plasma excited chemical vapour deposition of the layers from the gas phase (PECVD).
I. I. Rubtsevich +4 more
doaj
The study proposes an advanced control technique for modular‐structured series‐resonant converters, unifying pulse‐density modulation (PDM) and phase‐shift control to mitigate output current amplitude fluctuations.
Pavlo Herasymenko +3 more
doaj +1 more source
The study aimed at enhancement and optimisation of SnS conductivity via annealing for field effect transistor’s semiconductor channel layer application. Interstitials and vacancies in SnS films are known to cause carrier traps which limit charge carriers
Thomas Daniel +3 more
doaj +1 more source

