Results 41 to 50 of about 101,466 (316)
Advanced Functional Materials, EarlyView.Shellac, a centuries‐old natural resin, is reimagined as a green material for flexible electronics. When combined with silver nanowires, shellac films deliver transparency, conductivity, and stability against humidity. These results position shellac as a sustainable alternative to synthetic polymers for transparent conductors in next‐generation ...
Rahaf Nafez Hussein +4 more
wiley +1 more source
Технологія та конструювання в електронній апаратурі, 2011 The research has been carried out on dependence of mechanical stress on the modes of deposition of silicon nitride and oxide films obtained by plasma excited chemical vapour deposition of the layers from the gas phase (PECVD).
I. I. Rubtsevich +4 more
doaj
IET Power ElectronicsThe study proposes an advanced control technique for modular‐structured series‐resonant converters, unifying pulse‐density modulation (PDM) and phase‐shift control to mitigate output current amplitude fluctuations.
Pavlo Herasymenko +3 more
doaj +1 more source
East European Journal of Physics, 2020 The study aimed at enhancement and optimisation of SnS conductivity via annealing for field effect transistor’s semiconductor channel layer application. Interstitials and vacancies in SnS films are known to cause carrier traps which limit charge carriers
Thomas Daniel +3 more
doaj +1 more source
Efeitos da saturação de velocidade em aplicações de alta frequência do Mosfet [PDF]
, 2003 Dissertação (mestrado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-Graduação em Engenharia ElétricaEste trabalho apresenta análise dos efeitos da saturação da velocidade dos portadores e do campo elétrico transversal na ...
Bork, Briam Cavalca
core
Role of Intrinsic Electron Trapping in Negative Charging of Amorphous Alumina
Advanced Functional Materials, EarlyView.Intrinsic electron trapping in amorphous Al2O3 is examined using hybrid‐DFT models spanning a wide density range. Both spontaneous and thermally activated trapping are identified, with pronounced spontaneous localization in dense, partly crystallized structures.
Jack W. Strand +5 more
wiley +1 more source
Study of MOSFET transistors in various hermetic surface-mount packages
Технологія та конструювання в електронній апаратурі, 2004 The assembly processes of MOSFET transistors in the SMD-1 metal-ceramic package were investigated in comparison with the SMD-220 metal-plastic package. Results regarding electrical and thermal parameters are presented.
I. I. Rubtsevitch +2 more
doaj
Leakage Power Analysis and Comparison of Deep Submicron Logic Gates
, 2004 Basic combinational gates, including NAND, NOR and XOR, are fundamental building blocks in CMOS digital circuits. This paper analyses and compares the power consumption due to transistor leakage of low-order and high-order basic logic gates. The NAND and
Merrett, Geoff +3 more
core +1 more source
Advanced Functional Materials, EarlyView.In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Surface mounting of high-power package-free MOSFET transistors
Технологія та конструювання в електронній апаратурі, 2006 The processes of mounting MOSFET transistor chips onto metallic and ceramic die holders intended for surface mounting have been investigated. The quality of chip attachment was evaluated using optical inspection, non-destructive X-ray television ...
D. L. Anufriev +2 more
doaj