Results 21 to 30 of about 396,204 (347)

Critical Evaluation of Organic Thin-Film Transistor Models

, 2018
Thin-film transistors (TFTs) represent a wide-spread tool to determine the charge-carrier mobility of materials. Mobilities and further transistor parameters like contact resistances are commonly extracted from the electrical characteristics.
Borchert, James W., Karner-Petritz, Esther, Klauk, Hagen, Krammer, Markus, Petritz, Andreas, Schider, Gerburg, Stadlober, Barbara, Zojer, Karin   +7 more
core   +1 more source

Papan Pergantian Pemain Sepak Bola Berbasis Digital Menggunakan IC4072 dan IC7447

Rekayasa, 2018
Semua rangkaian elektronika pada umumnya menggunakan komponen tabung hampa (vaccum tube) atau komponen diskrit seperti dioda dan transistor. Terkait dengan perkembangan teknologi dalam bidang elektronika, baik rangkaian maupun komponen mengalami ...
Teguh Arifianto
doaj   +1 more source

Graphene-Based Sensing Platform for On-Chip Ochratoxin A Detection

Toxins, 2019
In this work, we report an on-chip aptasensor for ochratoxin A (OTA) toxin detection that is based on a graphene field-effect transistor (GFET).
Nikita Nekrasov, Dmitry Kireev, Aleksei Emelianov, Ivan Bobrinetskiy   +3 more
doaj   +1 more source

A Comprehensive Review of One-Dimensional Metal-Oxide Nanostructure Photodetectors

Sensors, 2009
One-dimensional (1D) metal-oxide nanostructures are ideal systems for exploring a large number of novel phenomena at the nanoscale and investigating size and dimensionality dependence of nanostructure properties for potential applications.
Bando Yoshio, Dmitri Golberg, Haibo Zeng, Meiyong Liao, Xijin Xu, Xiaosheng Fang, Tianyou Zhai   +6 more
doaj   +1 more source

Improved Properties of Post-Deposition Annealed Ga₂O₃/SiC and Ga₂O₃/Al₂O₃/SiC Back-Gate Transistors Fabricated by Radio Frequency Sputtering

Micro, 2023
The high breakdown electric field, n-type doping capability, availability of high-quality substrates, and high Baliga’s figure of merit of Ga2O3 demonstrate its potential as a next-generation power semiconductor material.
Hee-Jae Lee, Geon-Hee Lee, Seung-Hwan Chung, Dong-Wook Byun, Michael A. Schweitz, Dae Hwan Chun, Nack Yong Joo, Minwho Lim, Tobias Erlbacher, Sang-Mo Koo   +9 more
doaj   +1 more source

Rational Fine‐Tuning of MOF Pore Metrics: Enhanced SO2 Capture and Sensing with Optimal Multi‐Site Interactions

Advanced Functional Materials, EarlyView.
A pore tuning strategy to amplify the multi‐site MOF‐SO2 interactions is proposed to achieve an enhanced trace SO2 capture and chemiresistive sensing in highly stable isostructural DMOFs by annelating benzene rings. This work provides a facile strategy to achieve tailor‐made stable MOF materials for specific multifunctional applications.
Shanghua Xing, Abdulrahman Mohabbat, István Boldog, Jens Möllmer, Marcus Lange, Yulyan Haiduk, Tobias Heinen, Vladimir Pankov, Oliver Weingart, Christoph Janiak   +9 more
wiley   +1 more source

Technology and Reliability of Normally-Off GaN HEMTs with p-Type Gate

Energies, 2017
GaN-based transistors with p-GaN gate are commonly accepted as promising devices for application in power converters, thanks to the positive and stable threshold voltage, the low on-resistance and the high breakdown field.
Matteo Meneghini, Oliver Hilt, Joachim Wuerfl, Gaudenzio Meneghesso   +3 more
doaj   +1 more source

Seeding-Layer-Free Deposition of High-k Dielectric on CVD Graphene for Enhanced Gate Control Ability

Crystals, 2022
The gate insulator is one of the most crucial factors determining the performance of a graphene field effect transistor (GFET). Good electrostatic control of the conduction channel by gate voltage requires thin gate oxides.
Yunpeng Yan, Songang Peng, Zhi Jin, Dayong Zhang, Jingyuan Shi   +4 more
doaj   +1 more source

Improved chopper circuit uses parallel transistors [PDF]

, 1966
Parallel transistor chopper circuit operates with one transistor in the forward mode and the other in the inverse mode. By using this method, it acts as a single, symmetrical, bidirectional transistor, and reduces and stabilizes the offset ...

core   +1 more source

All‐in‐One Analog AI Hardware: On‐Chip Training and Inference with Conductive‐Metal‐Oxide/HfOx ReRAM Devices

Advanced Functional Materials, EarlyView.
An all‐in‐one analog AI accelerator is presented, enabling on‐chip training, weight retention, and long‐term inference acceleration. It leverages a BEOL‐integrated CMO/HfOx ReRAM array with low‐voltage operation (<1.5 V), multi‐bit capability over 32 states, low programming noise (10 nS), and near‐ideal weight transfer.
Donato Francesco Falcone, Victoria Clerico, Wooseok Choi, Tommaso Stecconi, Folkert Horst, Laura Bégon‐Lours, Matteo Galetta, Antonio La Porta, Nikhil Garg, Fabien Alibart, Bert Jan Offrein, Valeria Bragaglia   +11 more
wiley   +1 more source