Results 11 to 20 of about 122,784 (308)

Hybrid Pass Transistor Logic With Ambipolar Transistors [PDF]

IEEE Transactions on Circuits and Systems I: Regular Papers, 2021
In comparison to the conventional complementary pull-up and pull-down logic structure, the pass transistor logic (PTL) family reduces the number of transistors required to perform logic functions, thereby reducing both area and power consumption. However, this logic family requires inter-stage inverters to ensure signal integrity in cascaded logic ...
Xuan Hu 0002, Amy S. Abraham, Jean Anne C. Incorvia, Joseph S. Friedman   +3 more
openaire   +3 more sources

A Fast, Numerical Circuit-Level Model of Carbon Nanotube Transistor [PDF]

, 2007
Recently proposed circuit-level models of carbon nanotube transistor (CNT) for SPICE-like simulators suffer from numerical complexities as they rely on numerical evaluation of integrals or internal Newton-Raphson iterations to find solutions of non ...
Dafeng Zhou, Bashir M. Al-Hashimi, Zhou, Dafeng, Kazmierski, Tom, Al-Hashimi, Bashir, Tom J. Kazmierski   +5 more
core   +2 more sources

State of the art and perspectives of graphene field-effect transistor [PDF]

, 2022
openAnalisi scientifica dei transistor a effetto di campo in grafene. L’elaborato segue lo sviluppo e il percorso di vita in ambito elettronico di questo conosciuto materiale dalle ottime potenzialità a prima vista, ma con diverse criticità e ...
CESCHIN, MATTEO
core  

Silicon spin diffusion transistor: materials, physics and device characteristics

, 2005
The realisation that eaveryday electronics has ignored the spin of the carrier in favour of its charge is the foundation of the field of spintronics. Starting with simple two-terminal devices based on GMR and tunnel magnetoresistance, the technology has ...
Tiusan, C, C.V. Tiusan, Gregg, John, S.M. Thompson, Ensell, G, Thompson, SM, Thompson, S M, Gregg, J F, Dennis, CL, Tiusan, CV, Ensell, GJ, Gregg, JF, C.L. Dennis, J.F. Gregg, G.J. Ensell, Dennis, C L   +15 more
core   +2 more sources

Magnetic Bipolar Transistor [PDF]

, 2004
A magnetic bipolar transistor is a bipolar junction transistor with one or more magnetic regions, and/or with an externally injected nonequilibrium (source) spin.
Zutic, Igor, Igor Žutić, Sarma, S. Das, Jaroslav Fabian, S. Das Sarma, Fabian, Jaroslav   +5 more
core   +1 more source

NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants [PDF]

, 2012
We have carried out 3D Non-Equilibrium Green Function simulations of ajunctionlessgate-all-around n-type silicon nanowiretransistor of 4.2 × 4.2 nm2 cross-section. We model the dopants in a fully atomistic way.
Brown, A., Asenov, A., A. Martinez, Aldegunde, M., M. Aldegunde, A. Asenov, Martinez, A., Antonio Martinez Muniz, A.R. Brown, Roy, S., S. Roy   +10 more
core   +1 more source

The application of neuMOS transistors to enhanced Built-in Self-Test (BIST) and product quality [PDF]

, 1999
The neuMOS transistor is a comparatively new device developed in 1991 at Tohoku University, Japan, which is currently showing great promise in the direction of enhanced circuit functionality, particularly in Neural Network applications.
Richardson, Andrew, Nicholson, Richard
core   +4 more sources

The investigation of quality of power-transistor crystals soldering by a transient impedance-spectrometer [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2012
Differential distribution profiles of the thermal «junction-to-case» resistance of KP723G transistors in accordance with the attachment of the crystals into the package have been investigated.
Turtsevich А. S., Rubtsevich I. I., Solov’yov Ya. А., Vas’kov O. S., Kononenko V. К., Niss V. S., Kerentsev А. F.   +6 more
doaj   +2 more sources

ANALYSIS OF FAILURES OF FIELD-EFFECT TRANSISTORS WHEN MONITORING THE OPERABILITY OF THE DEVICE BY INDIRECT PARAMETERS

Надежность и качество сложных систем, 2022
Background. According to electronics failure analysis, 90 % of failures occur in a very limited number of failed component types. Possible causes of failures of these types of components are easy to analyze.
M.L. Savin, A.K. Grishko, V.D. Zuev, I.I. Kochegarov, E.M. Solov'eva   +4 more
doaj   +1 more source

Preparation of Dye Semiconductors via Coupling Polymerization Catalyzed by Two Catalysts and Application to Transistor

Molecules, 2023
Organic dye semiconductors have received increasing attention as the next generation of semiconductors, and one of their potential applications is as a core component of organic transistors.
Shiwei Ren, Wenqing Zhang, Zhuoer Wang, Abderrahim Yassar, Jinyang Chen, Minfeng Zeng, Zhengran Yi   +6 more
doaj   +1 more source