Results 11 to 20 of about 101,466 (316)

State of the art and perspectives of graphene field-effect transistor [PDF]

, 2022
openAnalisi scientifica dei transistor a effetto di campo in grafene. L’elaborato segue lo sviluppo e il percorso di vita in ambito elettronico di questo conosciuto materiale dalle ottime potenzialità a prima vista, ma con diverse criticità e ...
CESCHIN, MATTEO
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A Fast, Numerical Circuit-Level Model of Carbon Nanotube Transistor [PDF]

, 2007
Recently proposed circuit-level models of carbon nanotube transistor (CNT) for SPICE-like simulators suffer from numerical complexities as they rely on numerical evaluation of integrals or internal Newton-Raphson iterations to find solutions of non ...
Dafeng Zhou, Bashir M. Al-Hashimi, Zhou, Dafeng, Kazmierski, Tom, Al-Hashimi, Bashir, Tom J. Kazmierski   +5 more
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Magnetic Bipolar Transistor [PDF]

, 2004
A magnetic bipolar transistor is a bipolar junction transistor with one or more magnetic regions, and/or with an externally injected nonequilibrium (source) spin.
Zutic, Igor, Igor Žutić, Sarma, S. Das, Jaroslav Fabian, S. Das Sarma, Fabian, Jaroslav   +5 more
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Photocurrent Modulation in a Multilayer Molybdenum Ditelluride Transistor

, 2023
We have fabricated a phototransistor based on multilayer MoTe2 and investigated its optical response. Under dark, the transistor exhibits ambipolar behavior with an on-off ratio of around 1000 for hole transport.
Massoud, Yehia Mahmoud, Khan, Muhammad Atif, Khan, Danial, Goyal, Amit   +3 more
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NEGF simulations of a junctionless Si gate-all-around nanowire transistor with discrete dopants [PDF]

, 2012
We have carried out 3D Non-Equilibrium Green Function simulations of ajunctionlessgate-all-around n-type silicon nanowiretransistor of 4.2 × 4.2 nm2 cross-section. We model the dopants in a fully atomistic way.
Brown, A., Asenov, A., A. Martinez, Aldegunde, M., M. Aldegunde, A. Asenov, Martinez, A., Antonio Martinez Muniz, A.R. Brown, Roy, S., S. Roy   +10 more
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Silicon spin diffusion transistor: materials, physics and device characteristics

, 2005
The realisation that eaveryday electronics has ignored the spin of the carrier in favour of its charge is the foundation of the field of spintronics. Starting with simple two-terminal devices based on GMR and tunnel magnetoresistance, the technology has ...
Tiusan, C, C.V. Tiusan, Gregg, John, S.M. Thompson, Ensell, G, Thompson, SM, Thompson, S M, Gregg, J F, Dennis, CL, Tiusan, CV, Ensell, GJ, Gregg, JF, C.L. Dennis, J.F. Gregg, G.J. Ensell, Dennis, C L   +15 more
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BSIM-CMG compact model for IC CAD: from FinFET to Gate-All-Around FET Technology

Journal of Microelectronic Manufacturing, 2020
We discuss the BSIM-CMG compact model for SPICE simulations of any common multi-gate (CMG) device. This is an industry standard model which has been used extensively for FinFETs IC design and simulation, and has now been extended to accurately model gate-
Avirup Dasgupta, Chenming Hu
doaj   +1 more source

Carbon Dot-Functionalized Solution-Gated Graphene Transistors for Highly Sensitive Detection of Cobalt(II) Ions

Chemosensors, 2023
A carbon dot-functionalized solution-gated graphene transistor (CD-SGGT) was designed and prepared via the modification of CDs on the gate of SGGT. The above CDs were hydrothermally synthesized using DL-thioctic acid and triethylenetramine as C, N and S ...
Zhanpeng Ren, Jianying Wang, Chenglong Xue, Minghua Deng, Ziqin Li, Huibin Zhang, Chen Cai, Bing Xu, Xianbao Wang, Jinhua Li   +9 more
doaj   +1 more source

The investigation of quality of power-transistor crystals soldering by a transient impedance-spectrometer [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2012
Differential distribution profiles of the thermal «junction-to-case» resistance of KP723G transistors in accordance with the attachment of the crystals into the package have been investigated.
Turtsevich А. S., Rubtsevich I. I., Solov’yov Ya. А., Vas’kov O. S., Kononenko V. К., Niss V. S., Kerentsev А. F.   +6 more
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ANALYSIS OF FAILURES OF FIELD-EFFECT TRANSISTORS WHEN MONITORING THE OPERABILITY OF THE DEVICE BY INDIRECT PARAMETERS

Надежность и качество сложных систем, 2022
Background. According to electronics failure analysis, 90 % of failures occur in a very limited number of failed component types. Possible causes of failures of these types of components are easy to analyze.
M.L. Savin, A.K. Grishko, V.D. Zuev, I.I. Kochegarov, E.M. Solov'eva   +4 more
doaj   +1 more source