Results 61 to 70 of about 396,204 (347)
Advanced Functional Materials, EarlyView.In MOCVD MoS2 memristors, a current compliance‐regulated Ag filament mechanism is revealed. The filament ruptures spontaneously during volatile switching, while subsequent growth proceeds vertically through the MoS2 layers and then laterally along the van der Waals gaps during nonvolatile switching.
Yuan Fa +19 more
wiley +1 more source
Production of semi‑insulating silicon for high‑voltage devices
Технологія та конструювання в електронній апаратурі, 2008 The influence of deposition conditions on the nucleation process, structure, and electrophysical properties of oxygen‑doped polycrystalline silicon (ODPS) films has been investigated.
A. S. Turtsevich
doaj
, 2013 The Single Cooper Pair Josephson Transistor is a device that exhibits at the same time charge quantization and phase coherence. Coherent quantum phase slip phenomenon is "dual" the Josephson phase coherence while the charge quantization is dual to the ...
Chtchelkatchev, N. M., Kafanov, S.
core +1 more source
Bio‐Inspired Molecular Events in Poly(Ionic Liquids)
Advanced Functional Materials, EarlyView.Originating from dipolar and polar inter‐ and intra‐chain interactions of the building blocks, the topologies and morphologies of poly(ionic liquids) (PIL) govern their nano‐ and micro‐processibility. Modulating the interactions of cation‐anion pairs with aliphatic dipolar components enables the tunability of properties, facilitated by “bottom‐up ...
Jiahui Liu, Marek W. Urban
wiley +1 more source
Single hole transistor in a p-Si/SiGe quantum well
, 2000 A single hole transistor is patterned in a p-Si/SiGe quantum well by applying voltages to nanostructured top gate electrodes. Gating is achieved by oxidizing the etched semiconductor surface and the mesa walls before evaporation of the top gates ...
C. David +8 more
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Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips
Advanced Functional Materials, EarlyView.This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee +16 more
wiley +1 more source
Sensors, 2020 This study proposes a capacitive feedback transimpedance amplifier (CF-TIA) using a transistor in the direct current (DC) feedback loop for high DC dynamic range.
Jung-hoon Noh
doaj +1 more source
Resonant tunneling through a macroscopic charge state in a superconducting SET transistor
, 1997 We predict theoretically and observe in experiment that the differential conductance of a superconducting SET transistor exhibits a peak which is a complete analogue in a macroscopic system of a standard resonant tunneling peak associated with tunneling ...
A. J. Manninen +14 more
core +3 more sources
Advanced Functional Materials, EarlyView.Optoelectronic synaptic devices based on solution‐processed molecular telluride GST‐225 phase‐change inks are demonstrated for three‐factor learning. A global optical signal broadcast through a silicon waveguide induces non‐volatile conductance updates exclusively in locally electrically flagged memristors.
Kevin Portner +14 more
wiley +1 more source
The optimization of design of the membrane sensor
Технологія та конструювання в електронній апаратурі, 2009 The possibility of reducing the power consumed by the gas concentration sensor through the introduction of cracks in the structure of the multi-layered membrane has been considered.
I. I. Rubcevich +2 more
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