Results 61 to 70 of about 122,784 (308)

Monolithic Oxidation Enables Ultrathin Vertically Graded Tantalum Oxide for Low‐Voltage, Low‐Variability Memristive Switching

open access: yesAdvanced Functional Materials, EarlyView.
Monolithic UV‐ozone oxidation of Ta forms an ultrathin Ta2O5/TaOx bilayer enabling resistive switching with a vertical defect gradient. A stoichiometric surface layer over an oxygen‐deficient sublayer promotes localized filament nucleation near the top interface, enabling low‐voltage operation, and reduced cycle‐to‐cycle variability.
Seunghoon Yang   +11 more
wiley   +1 more source

A Capacitive Feedback Transimpedance Amplifier with a DC Feedback Loop Using a Transistor for High DC Dynamic Range

open access: yesSensors, 2020
This study proposes a capacitive feedback transimpedance amplifier (CF-TIA) using a transistor in the direct current (DC) feedback loop for high DC dynamic range.
Jung-hoon Noh
doaj   +1 more source

Ambient‐Stable Transparent P‐Type CuI Transistors Via Room‐Temperature Pulsed Laser Deposition

open access: yesAdvanced Functional Materials, EarlyView.
An in situ PLD fabricated AlOx${\rm AlO}_x$/CuI/AlOx${\rm AlO}_x$ sandwich structure enables stable CuI TFTs with a field‐effect mobility of 2.3 ±$\pm$ 0.7 cm2${\rm cm}^{2}$ V−1${\rm V}^{-1}$ s−1${\rm s}^{-1}$ and excellent ambient stability. Complementary inverters based on CuI:Rb and ZnO:Al exhibit rail‐to‐rail voltage transfer characteristics and an
Yang Chen   +5 more
wiley   +1 more source

The optimization of design of the membrane sensor

open access: yesТехнологія та конструювання в електронній апаратурі, 2009
The possibility of reducing the power consumed by the gas concentration sensor through the introduction of cracks in the structure of the multi-layered membrane has been considered.
I. I. Rubcevich   +2 more
doaj  

STRUCTURAL AND TECHNOLOGICAL PARAMETERS AFFECTING THE BIPOLAR STATIC INDUCTION TRANSISTOR (BSIT ) RESISTANCE

open access: yesВестник Дагестанского государственного технического университета: Технические науки, 2016
Aim. The aim of the study is to determine the impact of structural and technological parameters on the resistance of the bipolar static induction transistor.Methods.
T. A. Ismailov   +2 more
doaj   +1 more source

Semiconducting Polymers Post‐Functionalized With Ureido‐Pyrimidinone for Robust Stretchable Transistors

open access: yesAdvanced Functional Materials, EarlyView.
The design of intrinsically robust stretchable semiconducting polymers was achieved through OTBS‐mediated post‐functionalization of PDPP2T side chains with UPy units, generating dual hydrogen‐bonding motifs comprising weaker urethane linkages and strong quadruple UPy interactions along the long alkyl side chain, which is crucial for achieving desirable
Dinda Bazliah   +7 more
wiley   +1 more source

Design of new logic architectures utilizing optimized suspended-gate single-electron transistors

open access: yes, 2010
The operation and performances of the suspended-gate single-electron transistor (SET) are investigated through simulation. The movable gate is 3-D optimized, so that low actuation voltage (0.4 V), fast switching (1 ns), and ultralow pull-in energy (0.015
Mizuta, Hiroshi   +3 more
core   +1 more source

Multimode Oxide‐Based Optoelectronic Memtransistor for In‐Sensor Vision Processing

open access: yesAdvanced Functional Materials, EarlyView.
A multimode optoelectronic memtransistor (OEMT) is demonstrated for vision explainable artificial intelligence (VXAI) hardware. By integrating optical sensing, electrical masking, and non‐volatile memory, the device enables key operations required for generating saliency information.
Min Gu Lee   +10 more
wiley   +1 more source

Nanoscale Spatial Tuning of Superconductivity in Cuprate Thin Films via Direct Laser Writing

open access: yesAdvanced Functional Materials, EarlyView.
Maskless direct laser writing enables local control of oxygen stoichiometry in epitaxial YBCO thin films under ambient conditions. Sub‐micrometer grayscale patterns with tunable optical response and superconducting transport properties are achieved.
Irene Biancardi   +11 more
wiley   +1 more source

Phosphorus diffusion with the help of the solid planar source in the manufacturing of the integrated circuits [PDF]

open access: yesTekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2008
The results of the development and realization of the basic process of the phosphorus diffusion for the formation of the active region of the power silicon transistor have been considered. It is shown that the obtained optimum technological conditions of
B. A. Shangereeva
doaj  

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