Results 71 to 80 of about 396,204 (347)

STRUCTURAL AND TECHNOLOGICAL PARAMETERS AFFECTING THE BIPOLAR STATIC INDUCTION TRANSISTOR (BSIT ) RESISTANCE

Вестник Дагестанского государственного технического университета: Технические науки, 2016
Aim. The aim of the study is to determine the impact of structural and technological parameters on the resistance of the bipolar static induction transistor.Methods.
T. A. Ismailov, A. R. Shakhmaeva, B. A. Shangereeva   +2 more
doaj   +1 more source

Thermal transistor: Heat flux switching and modulating

, 2008
Thermal transistor is an efficient heat control device which can act as a heat switch as well as a heat modulator. In this paper, we study systematically one-dimensional and two-dimensional thermal transistors.
Aoki K., Braun O. M., Chang C. W., Chang C. W., Donadio D., Hu B., Hu B., Hu B., Lan J., Li B., Li B., Li B., Li B., Nosé S., Patton K. R., Pokrovsky V. L., Saira O.-P., Segal D., Terraneo M., Wang L., Wu G., Yang N., Zhang G.   +22 more
core   +1 more source

Complexation‐Mediated Diffusion‐Limited Crystal Growth: A General Framework for Anisotropic Crystal Growth in Cu‐Based Perovskites

Advanced Functional Materials, EarlyView.
A Complexation‐Mediated Diffusion‐Limited Growth (CMDLG) framework is established to rationalize the anisotropic growth of lead‐free perovskites. Integrating coordination chemistry with mass transport kinetics, this study theoretically derives and experimentally validates that stable iodocuprate complexes induce a diffusion‐limited regime.
Hyunmin Lee, Mu Geun Son, Thanh Van Vu, Hokyeong Jeong, Joonhee Kang, Youngjong Kang   +5 more
wiley   +1 more source

Metal Oxide Silicon /MOS/ transistors protected from destructive damage by wire [PDF]

, 1966
Loop of flexible, small diameter, nickel wire protects metal oxide silicon /MOS/ transistors from a damaging electrostatic potential. The wire is attached to a music-wire spring, slipped over the MOS transistor case, and released so the spring tensions ...
Deboo, G. J., Devine, E. J.
core   +1 more source

Spin Electronics and Spin Computation

, 2001
We review several proposed spintronic devices that can provide new functionality or improve available functions of electronic devices. In particular, we discuss a high mobility field effect spin transistor, an all-metal spin transistor, and our recent ...
Andreev, Awschalom, Bacon, Balents, Barnes, Belzig, Bennett, Blonder, Burkard, Das Sarma, Datta, de Jong, Deutsch, Deutsch, DiVincenzo, DiVincenzo, DiVincenzo, DiVincenzo, DiVincenzo, DiVincenzo, Dong, Ekert, Feynman, Feynman, Fiederling, Goldman, Hammar, Hu, Hu, Igor Z̆utić, Imamoglu, Imamoglu, Jaroslav Fabian, Johnson, Johnson, Kane, Kane, Kane, Kashiwaya, Kikkawa, Kikkawa, Kikkawa, Kulić, Lidar, Loss, Medvedkin, Meier, Monsma, Monsma, Nitta, Oestreich, Ohno, Ohno, Pellizzari, Prinz, Privman, S. Das Sarma, Schmidt, Shor, Shor, Soulen, Steane, Steane, Tedrow, Tsukagoshi, Upadhyay, Va'sko, van Son, Vrijen, Wolf, Worledge, Xuedong Hu, Yamaguchi, Zhu, Z̆utić, Z̆utić, Z̆utić   +76 more
core   +2 more sources

Photon Avalanching Nanoparticles: The Next Generation of Upconverting Nanomaterials?

Advanced Functional Materials, EarlyView.
This Perspective outlines the mechanistic foundations that enable photon‐avalanche (PA) behavior in lanthanide nanomaterials and contrasts them with emerging application spaces and forward‐looking design strategies. By bridging threshold engineering, energy‐transfer dynamics, and materials engineering, we provide a coherent roadmap for advancing the ...
Kimoon Lee, Yunseo Kim, Hyeong‐ku Jo, Dongjoon Yoon, Byeonghyeok Im, WonJeong Yu, Eui‐Rim On, Changhwan Lee   +7 more
wiley   +1 more source

Rf-induced transport of Cooper pairs in superconducting single electron transistors in a dissipative environment

, 2003
We investigate low-temperature and low-voltage-bias charge transport in a superconducting Al single electron transistor in a dissipating environment, realized as on-chip high-ohmic Cr microstrips.
A. B. Zorin, Averin D. V., Averin D. V., Brink A. M. v. d., Ingold G. L., Ingold G. L., J. Niemeyer, Kycia J. B., Lafarge P., Lotkhov S. V., Männik J., S. A. Bogoslovsky, S. V. Lotkhov, Steinbach A., Tuominen M. T.   +14 more
core   +1 more source

On the Angular Dependence of InP High Electron Mobility Transistors for Cryogenic Low Noise Amplifiers in a Magnetic Field [PDF]

, 2019
The InGaAs-InAlAs-InP high electron mobility transistor (InP HEMT) is the preferred active device used in a cryogenic low noise amplifier (LNA) for sensitive detection of microwave signals.
Bauch, Thilo, Grahn, Jan, Moschetti, Giuseppe, Niepce, David, Pourkabirian, Arsalan, Rodrigues, Isabel Harrysson, Schleeh, Joel   +6 more
core   +2 more sources

Bio‐Inspired Multimodal Hardware Front‐End Enabled by 2D Floating‐Gate Memory for UAV Perception

Advanced Functional Materials, EarlyView.
A MoS2/h‐BN /graphene floating‐gate memory underpins a bio‐inspired multimodal front end that integrates visual, inertial, and airflow cues. A 4 × 4 FG memory array encodes temporal intensity differences, while IMU‐ and airflow‐driven threshold modulation suppresses self‐motion artifacts, enabling fast, low‐power, robust autonomous UAV tracking and ...
Lianghao Guo, Yue Cheng, Cong Li, Xiaoyu Guo, Jiankai Yin, Dadong Fan, Zhenyu Xu, Chenyu Tang, Arokia Nathan, Shuo Gao, Li Tao, Luigi G. Occhipinti   +11 more
wiley   +1 more source

Phosphorus diffusion with the help of the solid planar source in the manufacturing of the integrated circuits [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2008
The results of the development and realization of the basic process of the phosphorus diffusion for the formation of the active region of the power silicon transistor have been considered. It is shown that the obtained optimum technological conditions of
B. A. Shangereeva
doaj