Results 91 to 100 of about 396,204 (347)
Two-stage emitter follower is temperature stabilized [PDF]
, 1964 Two-stage temperature stabilized circuit using two transistors is described. Increase in temperature causes the base-to-emitter voltage of n-p-n transistor to become less positive whereas the base-to-emitter voltage of p-n-p transistor becomes less ...
Schmidt, M. H.
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Advanced Functional Materials, EarlyView.Charge transport in 2D tin perovskite FETs is shown to be governed by dielectric interface behavior. Polar polymer dielectrics induce dipolar disorder that localizes carriers, whereas nonpolar polymers suppress trapping and enable superior charge transport, ensuring stable and reliable transistor operation. ABSTRACT Understanding the role of interfaces
Chongyao Li +5 more
wiley +1 more source
LAB-to-FAB Transition of 2D FETs: Available Strategies and Future Trends
NanomaterialsThe last decade has seen dramatic progress in research on FETs with 2D channels. Starting from the single devices fabricated using exfoliated flakes in the early 2010s, by the early 2020s, 2D FETs being trialed for mass production and vertical stacking ...
Yury Illarionov +3 more
doaj +1 more source
Table 1. Typical performance RF performance at Tcase = 25 �C in a class-AB production test circuit. Mode of operation f VDS PL(AV) Gp �D ACPR885k ACPR1980k [PDF]
[1] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8- 13). PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz. [2] Measured within 30 kHz bandwidth.
Wimax Power Ldmos Transistor
core
Low noise tuned amplifier [PDF]
, 1984 A bandpass amplifier employing a field effect transistor amplifier first stage is described with a resistive load either a.c. or directly coupled to the non-inverting input of an operational amplifier second stage which is loaded in a Wien Bridge ...
Kleinberg, L. L.
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Transistor Switches using Active Piezoelectric Gate Barriers
, 2015 This work explores the consequences of introducing a piezoelectric gate barrier in a normal field-effect transistor. Because of the positive feedback of strain and piezoelectric charge, internal charge amplification occurs in such an electromechanical ...
Ajoy, Arvind +3 more
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Kinetic Regimes of Hydrogen Absorption in Thin Films
Advanced Functional Materials, EarlyView.Knowledge of the hydrogen incorporation mechanisms in thin layers in relation to the amount absorbed is essential to design coatings and devices compatible with hydrogen‐based technologies. A combination of simultaneous in situ methods gives detailed insight into the hydrogenation of a prototypical hydrogen absorber layer in a time‐dependent manner ...
Laura Guasco +7 more
wiley +1 more source
Unlocking Photodetection Mode Switching from a Simple Lateral Design
Advanced Functional Materials, EarlyView.A simple lateral 2D perovskite photodetector capable of switching among transient, continuous, and dual transient/continuous photoresponse modes is achieved by integrating photoconductive effects with capacitive coupling from the SiO2/Si substrate. Such light‐programmable photodetection mode switching enables triple‐channel information transmission and
Zijun (June) Yong +10 more
wiley +1 more source
A Horizontal-Gate Monolayer MoS2 Transistor Based on Image Force Barrier Reduction
Nanomaterials, 2019 Transition metal dichalcogenides (TMDCs) have received wide attention as a new generation of semiconductor materials. However, there are still many problems to be solved, such as low carrier mobility, contact characteristics between metal and two ...
Kun Yang +4 more
doaj +1 more source
JFET reflection oscillator [PDF]
, 1985 A high frequency oscillator circuit is provided using a low cost junction type field effect transistor (T sub 1) with a tuned circuit connected to its gate.
Kleinberg, L. L.
core +1 more source