Results 91 to 100 of about 122,784 (308)

Anisotropic Phonon Dynamics and Directional Transport in Actinide Van der Waals Semiconductor Uranium Triselenide

Advanced Functional Materials, EarlyView.
USe3 is introduced as an actinide van der Waals semiconductor that mirrors the quasi‐one‐dimensional physics of transition‐metal trichalcogenides. Polarization‐resolved Raman spectroscopy on exfoliated flakes maps strong in‐plane phonon anisotropy and strain‐tunable mode shifts.
Aljoscha Söll, Valentino Jadriško, Sourav Dey, Nassima Benchtaber, Kalyan Sarkar, Borna Radatović, Jan Luxa, Fedor Lipilin, Kseniia Mosina, Vojtěch Kundrát, Jakub Zalesak, Jana Vejpravová, Martin Žáček, Szymon J. Zelewski, Nikolas Antonatos, Christoph Gadermaier, José J. Baldoví, Zdeněk Sofer   +17 more
wiley   +1 more source

A Compact Device Model for a Piezoelectric Nano-Transistor

Micromachines
An approximate compact model was developed to provide a convenient method of exploring the initial design space when investigating the performance of micro-electronic devices such as nano-scaled piezoelectronic transistors, where fast ball-park estimates
L. Neil McCartney, Louise E. Crocker, Louise Wright, Ivan Rungger   +3 more
doaj   +1 more source

Enhanced Ferroelectric Phase Formation via Local Structure Modification in the Pre‐Crystalline State of Hafnium Zirconium Oxide Thin Films

Advanced Functional Materials, EarlyView.
Hafnium zirconium oxide thin films are grown using plasma‐enhanced atomic layer deposition with the addition of an atomic layer annealing (ALA) step. ALA leads to a change in the short‐range structure of the deposit and encourages formation of the ferroelectric Pca21 phase. The result is wake‐up‐free performance with films exposed to ALA.
Nicolas K. Lam, Gerald R. Bejger, Waseem A. Wani, Kristina M. Holsgrove, Andrew N. Titus, Niyorjyoti Sharma, Shihao Wang, Keithen Orson, Megan K. Lenox, Liron Shvilberg, Yong Kyu Choi, Ian A. Brummel, Benjamin L. Aronson, Petra Reinke, Quentin Ramasse, Amit Kumar, Brian J. Rodriguez, Christina M. Rost, Jon F. Ihlefeld   +18 more
wiley   +1 more source

Wearable electrochemical sensors for monitoring performance athletes [PDF]

, 2011
Nowadays, wearable sensors such as heart rate monitors and pedometers are in common use. The use of wearable systems such as these for personalized exercise regimes for health and rehabilitation is particularly interesting.
Dermot Diamond, Coyle, Shirley, Kevin J. Fraser, Róisín M. Owens, Owens, Róisín, Benito-Lopez, Fernando, Shirley Coyle, Robert Byrne, George G. Malliaras, Curto, Vincenzo F., Diamond, Dermot, Fernando Benito-Lopez, Benjamin Schazmann, Vincenzo F. Curto, Malliaras, George, Fraser, Kevin J., Schazmann, Benjamin, Byrne, Robert   +17 more
core   +2 more sources

Ground‐State Charge‐Transfer Doping in Donor–Acceptor Semiconducting Polymers

Advanced Functional Materials, EarlyView.
This work demonstrates controlled ground‐state charge‐transfer complex formation (GS‐CTC) and doping in a series of diketopyrrolopyrrole‐based donor–acceptor semiconducting polymers paired with a π‐conjugated penta‐t‐butylpentacyanopentabenzo[25]annulene “cyanostar” macrocycle. Complementary experimental techniques show how subtle molecular, electronic,
Tanner L. Smith, Akshay N. Shah, Tanya A. Balandin, Michel De Keersmaecker, Paramasivam Mahalingam, Debapriya Gupta, Siqi Yu, Eui Hyun Suh, Pushkar Dalal, Erin L. Ratcliff, Scott P. O. Danielsen, Tse Nga Ng, Amar H. Flood, Jason D. Azoulay   +13 more
wiley   +1 more source

Controllable threshold voltage of a pentacene field-effect transistor based on a double-dielectric Structure [PDF]

, 2013
We report for the first time organic n-type nonvolatile memory transistors based on a fullerene (C_) semiconductor and an electron-trapping polymer, poly(perfluoroalkenyl vinyl ether) (CYTOP).
Murata, Hideyuki, Dao, Toan Thanh, Matsushima, Toshinori, Friedlein, Rainer   +3 more
core   +1 more source

Covalent Functionalization of 2D Semiconductors: A Roadmap to Advanced Electronic Devices

Advanced Functional Materials, EarlyView.
This Review presents recent advances in the covalent functionalization strategies for two‐dimensional semiconductors and their implementation in modern technologies. Layered materials are modified through diverse molecular chemistries (e.g., thiols, diazonium salts, alkyl halides, and electron‐deficient species) to tailor their surface properties ...
Ramiro Quirós‐Ovies, Bin Han, Paolo Samorì   +2 more
wiley   +1 more source

Structure‐Guided Balancing of Ambipolar Transport Enables Symmetric Switching in Heterojunction Bilayer Organic Transistor Inverters

Advanced Functional Materials, EarlyView.
Balancing the spatially separated p‐ and n‐type transport pathways in heterojunction‐bilayer OTFTs enables symmetric inverter switching (VM ≈ 0.5VDD), whereas discrete integration of unipolar OTFTs gives polarity‐dependent and resistive responses. ABSTRACT High inverter performance in ambipolar organic electronics requires balanced channel strengths ...
Sohyun Choi, Young Yong Kim, Ji Ho Youk, Hoichang Yang   +3 more
wiley   +1 more source

An Adaptive Inhibitory WSe2 Transistor for Retinomorphic In‐Sensor Image Processing

Advanced Functional Materials, EarlyView.
Conventional retinomorphic devices typically require deliberate gate‐bias tuning for each illumination condition. In this paper, we demonstrate an adaptive inhibitory WSe2 transistor that uses photo‐induced regime shift between the subthreshold and accumulation modes to achieve decision‐free, intensity‐adaptive image processing within a single pixel ...
Juhwan Baek, Junhwa Oh, Hyeonjung Kim, Minsik Park, Haein Cho, Jin Young Park, Hyeonchang Son, Taeyun Kim, Sung‐Un An, Yamin Zhang, Hyeon‐Jin Shin, Seyong Oh, Dong‐Ho Kang   +12 more
wiley   +1 more source

Remarkably High Effective Mobility of 301 cm²/V·s in 3 nm Ultra-Thin-Body SnO₂ Transistor by UV Annealing

Nanomaterials
At an ultra-thin 3 nm SnO2 channel thickness, a record-high effective mobility (µeff) of 301 cm2/V·s, field-effect mobility (µFE) of 304 cm2/V·s, and a sharp subthreshold swing (SS) of 201 mV/decade are achieved at a high carrier density (Ne) of 5 × 1012
An-Chieh Shih, Yi-Hao Zhan, Albert Chin
doaj   +1 more source