Results 101 to 110 of about 101,466 (316)

Characteristics, Theory and Modeling of the Transistor Laser

, 2009
The transistor laser possesses advantageous characteristics of fast base spontaneous carrier lifetime, high differential optical gain, and unique three-terminal electrical-optical characteristics for direct “read-out” of its optical properties.
Then, Han Wui
core  

Neuromorphic Electronics for Intelligence Everywhere: Emerging Devices, Flexible Platforms, and Scalable System Architectures

Advanced Materials, EarlyView.
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj, Roshni Satheesh Babu, Yuxin Xia, Eva Bestelink, Radu Sporea, Nikos Hastas, Ioannis Zeimpekis, Dimitra G. Georgiadou, Sayani Majumdar   +8 more
wiley   +1 more source

Injection transistor-transistor logic (i.t.t.l.)

Electronics Letters, 1979
A new circuit is described that comprises a lateral-multiemitter vertical transistor structure and an inverter transistor. The circuit acts as an injection transistor-transistor logic (i.t.t.l.).
openaire   +1 more source

The application of neuMOS transistors to enhanced Built-in Self-Test (BIST) and product quality [PDF]

, 1999
The neuMOS transistor is a comparatively new device developed in 1991 at Tohoku University, Japan, which is currently showing great promise in the direction of enhanced circuit functionality, particularly in Neural Network applications.
Richardson, Andrew, Nicholson, Richard
core  

Leaftronics: Bio‐Fractal Scaffolds From Leaf Venation for Low‐Waste Electronics

Advanced Materials, EarlyView.
“Leaftronics” transforms naturally evolved leaf venation into quasi‐fractal scaffolds for sustainable electronics. Polymer‐infiltrated leaf skeletons can be used to fabricate ultra‐smooth, reflow‐ and thin‐film‐compatible decomposable substrates, while making the same lignocellulose networks conducting results in flexible transparent electrodes.
Rakesh Rajendran Nair, Hrisheekesh Thachoth Chandran, Karl Leo, Hans Kleemann   +3 more
wiley   +1 more source

Fig.1 SOT23. QUICK REFERENCED DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

, 2014
NPN transistor in a plastic SOT23 ...
Npn Ghz Wideband Transistor
core  

Path‐Decoupled Cation‐Eutaxy III–V van der Waals Memristive Semiconductors for Mitigating the Neuromorphic Accuracy‐Energy Trade‐off

Advanced Materials, EarlyView.
Path‐decoupled III–V van der Waals memtransistors spatially separate ionic and electronic transport to overcome the conventional trade‐off between accuracy and energy in neuromorphic hardware. Mobile K+ ions in the vdW gaps set a wide conductance window, Gmax/Gmin, while gate‐tunable hole conduction lowers programming energy, enabling reliable ...
Jihong Bae, Ji Hoon Han, Taeyoung Kim, Jongbum Won, Seokmin Park, Gyu Won Kim, Sungsoon Kim, Hong Choi, Taehoon Kim, Hong‐Sub Lee, Jae‐Hyun Lee, Young Jin Choi, Jinwoo Cheon, Wooyoung Shim   +13 more
wiley   +1 more source

Laser‐Assisted Phase Engineering of 2D MoS2 for Efficient Solution‐Processed Electronics

Advanced Materials, EarlyView.
Here, local laser‐assisted phase transition from solution‐processed phase‐pure 1T′ to 2H MoS2 is shown to critically depend on the irradiation atmosphere. While processing in air leads to damaged insulating regions, inert conditions yield semiconducting 2H domains, enabling direct field‐effect transistor patterning with optimized lateral 1T′‐2H MoS2 ...
Anna Zhuravlova, Minjuan Li, Osamah Alharbi, Yeonsu Jeong, Bin Han, Lei Gao, Mischa Bonn, Mario Lanza, Sheng Yang, Antonio Gaetano Ricciardulli, Paolo Samorì   +10 more
wiley   +1 more source

Remarkably High Effective Mobility of 301 cm²/V·s in 3 nm Ultra-Thin-Body SnO₂ Transistor by UV Annealing

Nanomaterials
At an ultra-thin 3 nm SnO2 channel thickness, a record-high effective mobility (µeff) of 301 cm2/V·s, field-effect mobility (µFE) of 304 cm2/V·s, and a sharp subthreshold swing (SS) of 201 mV/decade are achieved at a high carrier density (Ne) of 5 × 1012
An-Chieh Shih, Yi-Hao Zhan, Albert Chin
doaj   +1 more source

Polyimide Dielectric Layer on Filaments for Organic Field Effect Transistors: Choice of Solvent, Solution Composition and Dip-Coating Speed

AUTEX Research Journal, 2014
In today’s research, smart textiles is an established topic in both electronics and the textile fields. The concept of producing microelectronics directly on a textile substrate is not a mere idea anymore and several research institutes are working on ...
Rambausek Lina, Bruneel Els, De Mey Gilbert, Van Langenhove Lieva   +3 more
doaj   +1 more source