Results 121 to 130 of about 101,466 (316)
Advanced Materials, EarlyView.This study presents a compact dynamic‐field‐driven nucleation and growth (DFNG) model that captures ferroelectric switching behavior under arbitrary voltage waveforms. It enables extraction of time‐dependent domain wall velocity and growth dimensionality, which can then be extended to device‐level modeling.
Yi Liang +10 more
wiley +1 more source
Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
, 2014 NPN transistor in a plastic SOT23 ...
Npn Ghz Wideband Transistor
core
Performance and analysis of the plasma bipolar junction transistor: Control of the surface electrical properties [PDF]
, 2012 A new configuration of plasma bipolar junction transistor (PBJT) based on an epitaxial wafer has been designed and fabricated. Its electrical properties and the collector plasma densities are characterized using electrical and optical methods. Using this
Li, Benben
core
Advanced Materials, EarlyView.The intimate interaction between negatively charged RNA molecules and conjugated polymers in organic electrochemical transistors (OECTs) in aqueous electrolytes is investigated. It demonstrates that RNA binding reduces the volumetric capacitance of the polymer channel, enabling the development of an ultrasensitive biosensing platform capable of ...
Hong Liu +7 more
wiley +1 more source
, 2010 135 W LDMOS power transistor for base station applications at frequencies ...
Power Ldmos Transistor
core
A new kind of vertically aligned field emission transistor with a cylindrical vacuum channel
, 2017 This study investigated a vertically aligned field emission transistor with a cylindrical vacuum channel. The channel length of this proposed transistor can be precisely controlled and easily fabricated to be comparable to the mean free path of ...
Tian, Jinshou +4 more
core +1 more source
Advanced Materials, EarlyView.We reveal the electronic origin of hidden interfacial doping in monolayer MoS2 grown by MOCVD, identifying sulfate related and water like species as intrinsic donors. Through dry interface engineering approach, we demonstrate MOCVD‐grown single‐crystal MoS2 wafers as a transfer‐free platform for the reliable evaluation of intrinsic gate stacks and ...
Shuhong Li +12 more
wiley +1 more source
, 2014 50 W LDMOS power transistor for base station applications at frequencies ...
Wimax Power Ldmos Transistor
core
Advanced Materials Interfaces, EarlyView.Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci +12 more
wiley +1 more source
Label‐Free Detection of a Neurotransmitter Using an Aptamer‐Functionalized Amorphous IGZO Transistor
Advanced Materials Interfaces, EarlyView.An aptamer‐functionalized amorphous IGZO thin‐film transistor enables label‐free electrical detection of the neurotransmitter serotonin under liquid‐gated operation. Stepwise surface functionalization ensures stable biomolecule integration and efficient electrostatic coupling.
Ngoc Thanh Ho +3 more
wiley +1 more source