Results 131 to 140 of about 122,784 (308)
Pelajaran elektronika Televisi transistor.
Dalam mempelajari teknik T. V. sebaiknya tidak meninggalkan T-V tabung sebab disampng ada hubungan yang erat antara televisi tabung dengan T-V yang menggunakan transistor, juga akan mempermudah untuk mengikuti perkembangan elektronika selanjutnya seperti
Ichwan Hariadi
core
HSPICE implementation of a numerically efficient model of CNT transistor
This paper presents the algorithms of an implementation of a numerically efficient carbon nanotube transistor (CNT) model in HSPICE. The model is derived from cubic spline non-linear approximation of the non-equilibrium mobile charge density.
Zhou, Dafeng +2 more
core +1 more source
, 2014 50 W LDMOS power transistor for base station applications at frequencies ...
Wimax Power Ldmos Transistor
core
Advanced Materials, EarlyView.A scalable bottom‐up CVD methodology, based on liquid transition metal salt precursors, is presented for the controlled growth of two high‐quality MoSe2–WSe2 heterostructures (HSs): purely lateral (HS I) and hybrid lateral/vertical (HS II), by simply adjusting precursor concentration.
Md Tarik Hossain +16 more
wiley +1 more source
Above Room Temperature Ferroelectricity in Epitaxially Strained KTaO3
Advanced Materials, EarlyView.Through precise epitaxial engineering, the cubic and paraelectric KTaO3${\rm KTaO}_3$ is transformed into a robust ferroelectric. By leveraging lattice‐mismatched substrates to apply controlled epitaxial strain, a stable ferroelectric ground‐state is achieved with a transition temperature as high as 475 K, establishing KTaO3${\rm KTaO}_3$ as a highly ...
Tobias Schwaigert +11 more
wiley +1 more source
, 2010 135 W LDMOS power transistor for base station applications at frequencies ...
Power Ldmos Transistor
core
Barrier‐Assisted Plasma Doping for Spatially Selective Resistance Engineering in MoS2 Transistors
Advanced Materials, EarlyView.Barrier‐assisted NH3 plasma doping enables damage‐free, spatially selective carrier modulation in monolayer MoS2 transistors. An ultrathin pV3D3/Al2O3 protective‐dielectric stack acts as a chemical filter that allows NHx radicals to reach the MoS2 surface while blocking plasma damage. This process achieves a high electron concentration of 4.3 × 1013 cm−
Inseong Lee +15 more
wiley +1 more source
Mode of operation f VDS PL(AV) Gp ηD ACPR
, 2010 40 W LDMOS power transistor for base station applications at frequencies ...
Power Ldmos Transistor, Product Profile
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Доклады Белорусского государственного университета информатики и радиоэлектроники, 2019 Modeling results of output static characteristics of gallium arsenide transistors for extreme high frequency range are given. Direct ion-implanted gallium arsenide transistors with the special profile under the gate are analyzed.
V. N. Mishchenka
doaj
Advanced Materials, EarlyView.We show that sol‐gel‐fractured indium–magnesium oxide combines deep‐ultraviolet responsivity, high carrier mobility, and an excellent memory dynamic range. This unique materials platform enables deep‐ultraviolet long‐afterglow light‐emitting devices with multifunctional integration.
Zhongshi Ju +9 more
wiley +1 more source