Results 141 to 150 of about 396,204 (347)

Ion‐Reconfigurable “N”‐Shaped Antiambipolar Behavior in Organic Electrochemical Transistors

Advanced Materials, EarlyView.
A unique N‐shaped negative differential transconductance (NDT) characteristics is demonstrated in single‐polymer organic electrochemical transistors through a sequential doping–redox–doping process driven by iodide ions. This redox‐driven mechanism enables low‐voltage, ion‐controlled reconfigurability and tunable current modulation, allowing seamless ...
Debdatta Panigrahi, Daniele Zucchelli, Zeinab Hamid, Christina Kousseff, Arup Sarkar, Aristea Pavlou, Zhitian Ling, Somayeh Kashani, Iain McCulloch, Paul W. M. Blom, Fabrizio Torricelli, Paschalis Gkoupidenis   +11 more
wiley   +1 more source

Study of MISHEMT transistors behavior with different gate dielectrics

, 2022
Genilson Julião do [UNESP] Carmo
openalex   +1 more source

Self-aligned gate dielectric in carbon nanotube field-effect transistors by anodic oxidation of aluminium [PDF]

, 2011
Jeff Tsung‐Hui Tsai, Wei-Syun Wang, Szu-Hung Chen, Chia‐Liang Sun   +3 more
openalex   +1 more source

Role of the Recombination Zone in Organic Light‐Emitting Devices

Advanced Materials, EarlyView.
This review summarizes the critical role of the recombination zone in organic light‐emitting diodes (OLEDs). We highlight that broadening the recombination zone in OLEDs based on emissive layers with balanced charge transport and high photoluminescence quantum yields provides a promising route toward achieving both long operational lifetime and high ...
Yungui Li, Karl Leo
wiley   +1 more source

Ultrafast Vertical Organic Electrochemical Transistors With Ion‐Permeable Conductive Polymer Top Electrodes

Advanced Materials, EarlyView.
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu, Yingxue An, Luigi Fabiano, Qifan Li, Qingqing Wang, Feng Zhang, Wenlong Jin, Miao Xiong, Junpeng Ji, Ugo Bruno, Grzegorz Greczynski, Grazia Maria Lucia Messina, Xianjie Liu, Chi‐Yuan Yang, Simone Fabiano   +14 more
wiley   +1 more source

Three Dimensional Transistor Design Maintains Moore s Law for Foreseeable Future

, 2013

openalex   +1 more source

Self‐Powered Flexible Triboelectric‐Gated Ion‐Gel Transistor for Neuromorphic Tactile Sensing and Human Activity Recognition

Advanced Materials, EarlyView.
A fully flexible ion‐gel‐gated graphene‐channel transistor driven by a triboelectric nanogenerator enables self‐powered tactile sensing and synaptic learning. Mimicking spike‐rate‐dependent plasticity, the device exhibits frequency‐selective potentiation and depression, supporting rate‐coded neuromorphic computation even under flex.
Hanseong Cho, Seoyeon Park, Youngmin Lee, Sejoon Lee   +3 more
wiley   +1 more source

Triply degenerate semimetal PtBi2 as van der Waals contact interlayer in two-dimensional transistor

Materials Futures
The low-energy electronic excitations in topological semimetal yield a plethora of a range of novel physical properties. As a relatively scarce branch, the research of triple-degenerate semi-metal is mostly confined to the stage of physical properties ...
Bohan Wei, Yun Li, Tinghe Yun, Yang Li, Tianhu Gui, Wenzhi Yu, Hanran Mu, Nan Cui, Weiqiang Chen, Shenghuang Lin   +9 more
doaj   +1 more source

Preamplifier Noise in VLF Receivers [PDF]

Noise specifications for junction field-effect transistors are presented in different ways depending on the particular semiconductor manufacturer. Arithmetic involved in converting these specifications to equivalent RMS noise in microvolts developed at ...
Burhans, R. W.
core   +1 more source

High-frequency organic thin-film transistors for conformable large-area electronics [PDF]

, 2015
Amir Reuveny
openalex   +1 more source