Results 151 to 160 of about 122,784 (308)

Diketopyrrolopyrrole‐Based Cation as a Semiconducting Spacer in Layered Perovskite

open access: yesAdvanced Materials, EarlyView.
Diketopyrrolopyrrole cation incorporated layered perovskites exhibiting extended absorption profiles and enhanced charge carrier mobility with type‐II energy alignment. The improved photoconversion efficiency demonstrates the critical role of incorporating organic semiconductors in optimizing layered perovskite performance.
Waygen Thor   +8 more
wiley   +1 more source

1.2 Features and benefits Excellent ruggedness

open access: yes, 2013
100 W LDMOS power transistor for base station applications at frequencies ...
Power Ldmos Transistor, High Efficiency
core  

High-Mobility and Reliability Ultra-Thin-Channel Oxide Semiconductor Field-Effect Transistors for Chip-Interconnect-Embedded Logic and Ferroelectric Memory. [PDF]

open access: yesAdv Mater
Chen CK   +12 more
europepmc   +1 more source

Electropolymerized Aptasensor for Femtogram‐Level Cytokine Detection

open access: yesAdvanced Materials, EarlyView.
Electropolymerization of 3‐amino‐ʟ‐tyrosine creates ultrathin, smooth, and chemically robust pALT nanofilms with accessible carboxyl functionalities for direct aptamer immobilization. Integrated with fiber‐optic SPR and OECT platforms, these interfaces enable IL‐6 detection down to 100 fg mL−1 and provide a versatile route to bioelectronic sensing ...
Jiyao Yu   +7 more
wiley   +1 more source

Dual-ferroelectric stacked high-performance field-effect transistor. [PDF]

open access: yesNat Commun
Wang P   +10 more
europepmc   +1 more source

Ion Concentration and Voltage Imaging With Fluorescent Nanodiamonds

open access: yesAdvanced Materials, EarlyView.
We demonstrate reversible switching between the fluorescent NV0 and the dark NV+ state, in sub‐30 nm FNDs via surface oxidation and hydrogenation, respectively. In an electrochemical cell, we show that the fluorescence from hydrogenated particles enables all‐optical imaging of voltages and ion concentrations at the micrometer scale.
Patrick Voorhoeve   +8 more
wiley   +1 more source

Author Correction: A tunable multi-timescale Indium-Gallium-Zinc-Oxide thin-film transistor neuron towards hybrid solutions for spiking neuromorphic applications

open access: yesCommunications Engineering
Mauricio Velazquez Lopez   +7 more
doaj   +1 more source

A Very-High Frequency Solution-Processed Organic Field-Effect Transistor With Improved Voltage-Normalized Frequency of Transition. [PDF]

open access: yesAdv Sci (Weinh)
Losi T   +8 more
europepmc   +1 more source

Polar Wurtzite NbAlN: A Transition‐Metal Nitride Alloy for Polarization‐Engineered GaN Heterostructures

open access: yesAdvanced Materials, EarlyView.
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi   +12 more
wiley   +1 more source

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