Design and simulation of a CNTFET based approximate full adder for low power nanoelectronic and image processing applications. [PDF]
Karimi Forood AM +5 more
europepmc +1 more source
Diketopyrrolopyrrole‐Based Cation as a Semiconducting Spacer in Layered Perovskite
Diketopyrrolopyrrole cation incorporated layered perovskites exhibiting extended absorption profiles and enhanced charge carrier mobility with type‐II energy alignment. The improved photoconversion efficiency demonstrates the critical role of incorporating organic semiconductors in optimizing layered perovskite performance.
Waygen Thor +8 more
wiley +1 more source
1.2 Features and benefits Excellent ruggedness
100 W LDMOS power transistor for base station applications at frequencies ...
Power Ldmos Transistor, High Efficiency
core
High-Mobility and Reliability Ultra-Thin-Channel Oxide Semiconductor Field-Effect Transistors for Chip-Interconnect-Embedded Logic and Ferroelectric Memory. [PDF]
Chen CK +12 more
europepmc +1 more source
Electropolymerized Aptasensor for Femtogram‐Level Cytokine Detection
Electropolymerization of 3‐amino‐ʟ‐tyrosine creates ultrathin, smooth, and chemically robust pALT nanofilms with accessible carboxyl functionalities for direct aptamer immobilization. Integrated with fiber‐optic SPR and OECT platforms, these interfaces enable IL‐6 detection down to 100 fg mL−1 and provide a versatile route to bioelectronic sensing ...
Jiyao Yu +7 more
wiley +1 more source
Dual-ferroelectric stacked high-performance field-effect transistor. [PDF]
Wang P +10 more
europepmc +1 more source
Ion Concentration and Voltage Imaging With Fluorescent Nanodiamonds
We demonstrate reversible switching between the fluorescent NV0 and the dark NV+ state, in sub‐30 nm FNDs via surface oxidation and hydrogenation, respectively. In an electrochemical cell, we show that the fluorescence from hydrogenated particles enables all‐optical imaging of voltages and ion concentrations at the micrometer scale.
Patrick Voorhoeve +8 more
wiley +1 more source
A Very-High Frequency Solution-Processed Organic Field-Effect Transistor With Improved Voltage-Normalized Frequency of Transition. [PDF]
Losi T +8 more
europepmc +1 more source
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi +12 more
wiley +1 more source

