Results 111 to 120 of about 122,784 (308)
Vertical organic electrochemical transistors (vOECTs) are limited in speed by ion‐impermeable metal electrodes that slow ion injection. Using ion‐permeable PBFDO top electrodes allows direct vertical ion injection into BBL channels, achieving high current densities (>400 A cm−2), large on/off ratios (>106), and ultrafast switching in 28 µs. This sets a
Han‐Yan Wu +14 more
wiley +1 more source
Pelajaran Elektronika Radio Transistor dan Teknik Reparasinya.
Untuk memudahkan pengertian tentang radio yang menggunakan transistor sebagai bahan penguatnya maka dimulainya dari pengertian radio yang sederhana walaupun radio yang sedemikian itu sudah tidak terdapat dalam pasaran umum.v + 176 hlm; 15 x 20 ...
Ichwan Hariadi
core
Fig.1 SOT23. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
NPN transistor in a plastic SOT23 ...
Npn Ghz Wideband Transistor
core
Recently, organic-transistor-based chemical gas sensors have attracted great interest; however, the properties of the sensor devices, such as their responsivity, response/recovery rates, and linearity, have not yet been fully developed to enable their ...
Boseok Kang (1463410) +5 more
core +1 more source
Correlated Charge Transport in an Organic Coulomb Glass
ABSTRACT Advances in the development of organic field‐effect transistors (OFETs), electrically gated organic semiconductors (EGOFETs), and organic electrochemical transistors (OECTs) allow for the operation of these devices at very high charge‐carrier densities, where Coulomb interactions between carriers can be expected to become significant.
Magdalena Sophie Dörfler +3 more
wiley +1 more source
Molecular doping of conjugated polymers is fundamentally constrained by thermodynamic phase behavior. This Perspective reframes doping efficiency and stability in terms of miscibility limits, binodals, and solvus boundaries, highlighting the role of effective interaction parameters and charge transfer.
Somayeh Kashani +10 more
wiley +1 more source
The perspective presents an integrated view of neuromorphic technologies, from device physics to real‐time applicability, while highlighting the necessity of full‐stack co‐optimization. By outlining practical hardware‐level strategies to exploit device behavior and mitigate non‐idealities, it shows pathways for building efficient, scalable, and ...
Kapil Bhardwaj +8 more
wiley +1 more source
100 W LDMOS power transistor for base station applications at frequencies ...
Wimax Power Ldmos Transistor
core
Process Development for High Speed Transistor Laser Operation [PDF]
The transistor laser (TL) o ers advantages over conventional diode laser structure. The TL uses high base doping and minority carrier collection to reduce the recombination lifetime in the active region of the device to
James, Adam L.
core
THE USE OF DIFFUSION IN MANUFACTURING ELECTRONIC EQUIPMENT
Background. Electronic equipment has become a part of modern life. To achieve the desired physical and electrical properties, electronic materials are often processed at high temperatures.
Albert I. Nazmiev, Igor D. Mikheev
doaj +1 more source

