Results 111 to 120 of about 396,204 (347)
Hydrogen‐Bond–Driven Ion Retention in Electrolyte‐Gated Synaptic Transistors
Anion molecular design governs ion–polymer interactions in electrolyte‐gated synaptic transistors. Asymmetric anions induce hydrogen‐bond interactions that suppress ion back‐diffusion and stabilize doping, enabling enhanced nonvolatile synaptic properties.
Donghwa Lee +5 more
wiley +1 more source
Self‐Healing and Stretchable Synaptic Transistor
A self‐healing stretchable synaptic transistor (3S‐T) is realized using a p‐PVDF‐HFP‐DBP/PDMS‐MPU‐IU bilayer as gate insulator, where dipole‐dipole interaction enhances polarization to achieve a large memory window. Leveraging its neuronal biomimicry, the synaptic transistor demonstrates electrically compatibility with the biological brain. Furthermore,
Hyongsuk Choo +10 more
wiley +1 more source
Wafer‐scale two‐dimensioanl In2Se3 oxidized into InOx on sodium‐embedded beta‐alumina enables multifunctional reconfigurable electronics. Sodium ions accumulate within distinct spatial distribution under drain‐controlle and gate‐controlled operation. Drain‐control operation gives controllability of ultraviolet‐driven optoelectronic synaptic conductance
Jinhong Min +13 more
wiley +1 more source
Back Cover: Identification of grain boundaries as degradation site in n-channel organic field-effect transistors determined via conductive atomic force microscopy (Phys. Status Solidi RRL 4/2016) [PDF]
Sebastian Müller +3 more
openalex +1 more source
ABSTRACT Traditional wearable exoskeletons rely on rigid structures, which limit comfort, flexibility, and everyday usability. This work introduces the fundamental technologies to create the first soft, lightweight, intelligent textile‐based exoskeletons (Texoskeletons) built using 1D sensors and actuators.
Amy Lukomiak +19 more
wiley +1 more source
At an ultra-thin 3 nm SnO2 channel thickness, a record-high effective mobility (µeff) of 301 cm2/V·s, field-effect mobility (µFE) of 304 cm2/V·s, and a sharp subthreshold swing (SS) of 201 mV/decade are achieved at a high carrier density (Ne) of 5 × 1012
An-Chieh Shih, Yi-Hao Zhan, Albert Chin
doaj +1 more source
In today’s research, smart textiles is an established topic in both electronics and the textile fields. The concept of producing microelectronics directly on a textile substrate is not a mere idea anymore and several research institutes are working on ...
Rambausek Lina +3 more
doaj +1 more source
Method for analyzing radiation sensitivity of integrated circuits [PDF]
A method for analyzing the radiation sensitivity of an integrated circuit is described to determine the components. The application of a narrow radiation beam to portions of the circuit is considered.
Gauthier, M. K., Stanley, A. G.
core +1 more source
A spin field effect transistor for low leakage current
In a spin field effect transistor, a magnetic field is inevitably present in the channel because of the ferromagnetic source and drain contacts. This field causes random unwanted spin precession when carriers interact with non-magnetic impurities.
Bandyopadhyay +18 more
core +1 more source
An Edible H2O2 Biosensor for Gastrointestinal Metabolites and Peroxidase Enzyme Quantification
We present an edible biosensor for gastric fluid analysis that integrates a caffeic acid–horseradish peroxidase redox system into an edible electrolyte‐gated transistor. The device enables rapid, low‐volume detection of H2O2 and, with minimal modification, metabolites and enzyme activity in simulated gastrointestinal conditions.
Valerio Francesco Annese +10 more
wiley +1 more source

