Results 1 to 10 of about 141,900 (295)

Modulation-doped beta-(Al0.2Ga0.8)2O3/Ga2O3 Field-Effect Transistor

, 2017
Modulation-doped heterostructures are a key enabler for realizing high mobility and better scaling properties for high performance transistors. We report the realization of modulation-doped two-dimensional electron gas (2DEG) at beta(Al0.2Ga0.8)2O3 ...
Arehart, Aaron R., Brenner, Mark, Hwang, Jinwoo, Johnson, Jared, Joishi, Chandan, Krishnamoorthy, Sriram, Lodha, Saurabh, McGlone, Joe, Rajan, Siddharth, Xia, Zhanbo, Zhang, Yuewei   +10 more
core   +1 more source

TECHNOLOGY OF MANUFACTURING OF TRANSISTOR STRUCTURES POWER ELECTRONICS

Вестник Дагестанского государственного технического университета: Технические науки, 2016
It is proved that a prospective direction of electronic power development are intelligent power components: integrated power ICS and modules. Power electronic devices in the field of switched currents up to 50 A are arranged.
T. E. Sarkarov, B. A. Shangereeva, A. R. Shakhmaeva   +2 more
doaj   +1 more source

Strain-Based Room-Temperature Non-Volatile MoTe$_2$ Ferroelectric Phase Change Transistor

, 2019
The primary mechanism of operation of almost all transistors today relies on electric-field effect in a semiconducting channel to tune its conductivity from the conducting 'on'-state to a non-conducting 'off'-state.
Askari, Hesam, Azizimanesh, Ahmad, Hou, Wenhui, Liu, Ming, Peña, Tara, Sewaket, Arfan, Watson, Carla, Wu, Stephen M.   +7 more
core   +1 more source

Nanomaterials-based Field Effect Transistor biosensor for cancer therapy

Next Nanotechnology
Biosensors made of nanomaterials play a prominent part in diagnostic applications in the biomedical domain. The peculiar characteristics of nanomaterials including quantum effects, self-assembly, and larger surface area make them an irresistible choice ...
Silpa Sasikumar, Kishore Sivaram, N. Sreejisha, Selvakumar Murugesan   +3 more
doaj   +1 more source

Channel-Width Dependent Enhancement in Nanoscale Field Effect Transistor [PDF]

, 2008
We report the observation of channel-width dependent enhancement in nanoscale field effect transistors containing lithographically-patterned silicon nanowires as the conduction channel. These devices behave as conventional metal-oxide-semiconductor field-
Chen, Yu, Erramilli, Shyamsunder, Hong, Mi K., Mohanty, Pritiraj, Wang, Xihua   +4 more
core  

A Study on Graphene—Metal Contact

Crystals, 2013
The contact resistance between graphene and metal electrodes is crucial for the achievement of high-performance graphene devices. In this study, we review our recent study on the graphene–metal contact characteristics from the following viewpoints: (1 ...
Hongyu Yu, Jun Wei, Xiaowei Sun, Wenjun Liu   +3 more
doaj   +1 more source

Investigation of new concepts of adaptive devices Quarterly technical report, 15 Jun. - 14 Sep. 1967 [PDF]

Insulated gate field effect transistor with adaptive and memory ...
Lincoln, A. J., Pao, H. C., Wegener, H. A. R.   +2 more
core   +1 more source

Field-effect transistor replaces bulky transformer in analog-gate circuit [PDF]

, 1965
Metal-oxide semiconductor field-effect transistor /MOSFET/ analog-gate circuit adapts well to integrated circuits.

core   +1 more source

An investigation of the effects of radiation on silicon nitride insulated gate /MNS/ transistors Final report [PDF]

Radiation effects on silicon nitride insulated gate field effect ...
Frank, R., Sewell, F., Wegener, H. A. R.
core   +1 more source

Polarographic carbon dioxide transducer amplifier [PDF]

, 1971
Electronic amplifier contains matched pair of metal oxide semiconductor field effect transistor devices which have high input impedance and long-term stability.
Stillman, G.
core   +1 more source