Results 81 to 90 of about 122,784 (308)
LAB-to-FAB Transition of 2D FETs: Available Strategies and Future Trends
The last decade has seen dramatic progress in research on FETs with 2D channels. Starting from the single devices fabricated using exfoliated flakes in the early 2010s, by the early 2020s, 2D FETs being trialed for mass production and vertical stacking ...
Yury Illarionov +3 more
doaj +1 more source
A scalable, solution‐processed WSe2/ZrO2‐x van der Waals heterostructure realizes a light‐induced field‐tunneling synapse (LIFTS) that activates exclusively under bright illumination, emulating the photopic adaptation of the human retina at the device level.
Kijeong Nam +10 more
wiley +1 more source
Modelo do descasamento (Mismatch) entre transistores MOS: [tese] [PDF]
Tese (Doutorado) - Universidade Federal de Santa Catarina, Centro Tecnológico. Programa de Pós-graduação em Engenharia ElétricaDiversos modelos teóricos para o descasamento entre dispositivos na tecnologia MOS foram propostos desde a década de '80, sendo
Klimach, Hamilton
core
Numerically efficient modeling of CNT transistors with ballistic and non-ballistic effects for circuit simulation [PDF]
This paper presents an efficient carbon nanotube (CNT) transistor modeling technique which is based on cubic spline approximation of the non-equilibrium mobile charge density.
Ashburn, Peter +3 more
core +1 more source
Memristive‐Gated RC‐Delay Synaptic Transistors for Time‐Encoded Analog in‐Memory Computing
A Memristive‐Gated Transistor for Time‐Encoded Analog In‐Memory Computing — By exploiting the RC delay of a self‐rectifying interface‐type memristor, nonlinear I–V distortion is structurally bypassed, enabling 3‐bit nonvolatile memory, spike‐timing‐based analog encoding, and hardware‐calibrated reservoir‐computing validation within a unified device ...
Yun‐Seo Shin +7 more
wiley +1 more source
A Horizontal-Gate Monolayer MoS2 Transistor Based on Image Force Barrier Reduction
Transition metal dichalcogenides (TMDCs) have received wide attention as a new generation of semiconductor materials. However, there are still many problems to be solved, such as low carrier mobility, contact characteristics between metal and two ...
Kun Yang +4 more
doaj +1 more source
The physical realization of artificial neurons is a critical challenge for energy‐efficient neuromorphic computing. This review presents a comprehensive analysis of the evolution of artificial neuron implementations from conventional CMOS to emerging post‐CMOS technologies.
Kannan Udaya Mohanan +4 more
wiley +1 more source
Transistor-Based Synaptic Devices for Neuromorphic Computing
Currently, neuromorphic computing is regarded as the most efficient way to solve the von Neumann bottleneck. Transistor-based devices have been considered suitable for emulating synaptic functions in neuromorphic computing due to their synergistic ...
Wen Huang +4 more
doaj +1 more source
Tracking Battery Microstructural Degradation Through Directional Thermal Transport Signatures
In lithium‐ion batteries, heat conduction varies between the through‐plane and in‐plane directions because of the cell's layered structure. Therefore, cell degradation influences thermal conductivity in each direction uniquely due to detailed microstructural and compositional changes.
Mohammad Shoghi Tekmedash +6 more
wiley +1 more source
Recent Progress in Organic Optoelectronic Synaptic Devices
Organic semiconductors hold immense promise in the field of optoelectronic synapses due to their tunable optoelectronic properties, mechanical flexibility, and biocompatibility. This review article provides a comprehensive overview of recent advancements
Min He, Xin Tang
doaj +1 more source

