Results 81 to 90 of about 396,204 (347)

Nanolaminated HfO₂/Al₂O₃ Dielectrics for High‐Performance Silicon Nanomembrane Based Field‐Effect Transistors on Biodegradable Substrates (Adv. Mater. Interfaces 32/2022) [PDF]

, 2022
Chen Liu, Zhuofan Wang, Yuming Zhang, Hongliang Lü, Yimen Zhang   +4 more
openalex   +1 more source

Statistically Resolving Thickness‐Dependent Electrical Characteristics in Multilayer‐MoS2 Transistors

Advanced Functional Materials, EarlyView.
A large number of MoS2 flakes were screened to obtain high‐quality flakes based on optical intensities in R, G, and B channel images. The flakes were classified from Level 1 to 6 based on optical intensities in the R, G, and B channel images. Low‐quality flake exhibited wrinkled, folded, or overlapped features, while high‐quality displayed a neat ...
Sanghyun Lee, Sumin Hong, Minho Park, Seongju Kim, Sanghoon Baek, Seonguk Yang, Chang‐Soo Lee, Sang‐Hoon Bae, Joonki Suh, Yongwoo Lee, Haksoon Jung, Jimin Kwon   +11 more
wiley   +1 more source

FUNCTIONALLY INTEGRATED DEVICE FOR TEMPERATURE MEASUREMENT

Informatyka, Automatyka, Pomiary w Gospodarce i Ochronie Środowiska
The article presents a method of implementing a functionally integrated device for temperature measurement, which allows for controlled heating of the primary temperature transducer, measurement of the heating temperature as well as the temperature and ...
Les Hotra, Oksana Boyko, Igor Helzhynskyy, Hryhorii Barylo, Marharyta Rozhdestvenska, Halyna Lastivka   +5 more
doaj   +1 more source

Multi‐Scale Interface Engineering of MXenes for Multifunctional Sensory Systems

Advanced Functional Materials, EarlyView.
MXenes, as two‐dimensional transition metal carbides and nitrides, demonstrate remarkable capabilities for multifunctional sensing applications. This review systematically examines multi‐scale interface engineering approaches that enhance sensing performance, enable diverse detection functionalities, and improve system‐level compatibility in MXene ...
Jiaying Liao, Sin‐Yi Pang, Jianhua Hao
wiley   +1 more source

Coulomb blockade in a Si channel gated by an Al single-electron transistor

, 2007
We incorporate an Al-AlO_x-Al single-electron transistor as the gate of a narrow (~100 nm) metal-oxide-semiconductor field-effect transistor (MOSFET). Near the MOSFET channel conductance threshold, we observe oscillations in the conductance associated ...
Brown, K. R., Kane, B. E., Sun, L.
core   +1 more source

Thermally Engineered Sodium‐Embedded Alumina with Programmable Synaptic Plasticity for Neuromorphic Transistors

Advanced Functional Materials, EarlyView.
A fully transparent, all‐metal‐oxide neuromorphic transistor using a sodium‐embedded alumina (SEA) electrolyte is demonstrated. By precisely tuning the thermal annealing process, the chemical composition of the SEA layer is controlled, allowing for the deterministic realization of both short‐term and long‐term synaptic plasticity within the same device
Yonghyun Albert Kwon, Jaeyeon Kim, Dong Yeon Won, Saeyoun Park, Youngjae Yoo, Seongchan Kim, Dong‐Hwan Kim, Jeong Ho Cho   +7 more
wiley   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

WSe2 2D p‐type semiconductor‐based electronic devices for information technology: Design, preparation, and applications

InfoMat, 2020
The pioneering exfoliation of monolayer tungsten diselenide has greatly inspired researchers toward semiconducting applications. WSe2 belongs to a family of transition‐metal dichalcogenides.
Qilin Cheng, Jinbo Pang, Dehui Sun, Jingang Wang, Shu Zhang, Fan Liu, Yuke Chen, Ruiqi Yang, Na Liang, Xiheng Lu, Yanchen Ji, Jian Wang, Congcong Zhang, Yuanhua Sang, Hong Liu, Weijia Zhou   +15 more
doaj   +1 more source

Cooper-pair qubit and Cooper-pair electrometer in one device

, 2001
An all-superconductor charge qubit enabling a radio-frequency readout of its quantum state is described. The core element of the setup is a superconducting loop which includes the single-Cooper-pair (Bloch) transistor.
A.B Zorin, Aassime, Averin, Averin, Bouchiat, Cottet, Danilov, Devoret, Flees, Hansma, Il'ichev, Korotkov, Krupenin, Langenberg, Likharev, Likharev, Lotkhov, Makhlin, Mück, Nakamura, Rifkin, Ryazanov, Schoelkopf, Tuominen, Zorin, Zorin, Zorin, Zorin   +27 more
core   +1 more source

Multi‐Functional ZnO–Te Heterojunction Devices Enabling Compact Frequency Quadrupler

Advanced Functional Materials, EarlyView.
Wafer‐scale ZnO–Te heterojunction devices featuring tunable double negative differential transconductance (D‐NDT) are demonstrated at ≤ 200°C. Leveraging this unique characteristic, a single‐stage frequency quadrupler is realized, achieving a 64%–75% reduction in device count.
Jae Hyeon Jun, Byeong Gwan Kim, Min Seo Kang, Ui Gwan Shin, Minjae Kim, Kiyung Kim, Hae‐Won Lee, Yongsu Lee, Byoung Hun Lee   +8 more
wiley   +1 more source