Results 51 to 60 of about 396,204 (347)
Communications EngineeringSpiking neural network algorithms require fine-tuned neuromorphic hardware to increase their effectiveness. Such hardware, mainly digital, is typically built on mature silicon nodes.
Mauricio Velazquez Lopez +7 more
doaj +1 more source
A tunable, dual mode field-effect or single electron transistor
, 2012 A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology.
B. Previtali +9 more
core +1 more source
Injection transistor-transistor logic (i.t.t.l.)
Electronics Letters, 1979 A new circuit is described that comprises a lateral-multiemitter vertical transistor structure and an inverter transistor. The circuit acts as an injection transistor-transistor logic (i.t.t.l.).
openaire +1 more source
MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance
Advanced Functional Materials, EarlyView.Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley +1 more source
Technology for producing palladium silicide films for high-power Schottky diodes
Технологія та конструювання в електронній апаратурі, 2005 A technology is proposed for forming transition layers of palladium silicide through a solid-phase reaction of a palladium film with a silicon substrate directly during deposition, without the need for subsequent thermal treatment.
L. P. Anufriev +3 more
doaj
A New Heterostructure Junctionless Tunnel Field Effect Transistor with Silicon-on-Nothing Technique for DC Parameter Improvement [PDF]
مجله مدل سازی در مهندسیIn this paper, a novel heterostructure junctionless tunnel field effect transistor with silicon-on-nothing technology (SON HS-JLTFET) is proposed. The proposed device has two advantages over conventional JLTFET.
Amin Vanak, Amir Amini
doaj +1 more source
Recent Progress in Contact Engineering of Field-Effect Transistor Based on Two-Dimensional Materials
Nanomaterials, 2022 Two-dimensional (2D) semiconductors have been considered as promising candidates to fabricate ultimately scaled field-effect transistors (FETs), due to the atomically thin thickness and high carrier mobility.
Jialei Miao +3 more
doaj +1 more source
Multiple Functionality in Nanotube Transistors
, 2002 Calculations of quantum transport in a carbon nanotube transistor show that such a device offers unique functionality. It can operate as a ballistic field-effect transistor, with excellent characteristics even when scaled to 10 nm dimensions.
A. Odintsov +21 more
core +1 more source
Advanced Functional Materials, EarlyView.Ferroelectricity in thin HfO2‐based films offers great possibilities for next‐generation neuromorphic memory devices. There, the response to subcoercive voltage signals is driven by the movement of mobile interfaces and their interaction with crystal defects – a yet rather unexplored aspect, which we shed light on and gain new insights into the complex
Maximilian T. Becker +11 more
wiley +1 more source
A single photoelectron transistor for quantum optical communications [PDF]
, 2002 A single photoelectron can be trapped and its photoelectric charge detected by a source/drain channel in a transistor. Such a transistor photodetector can be useful for flagging the safe arrival of a photon in a quantum repeater. The electron trap can be
Bandaru, Prabhakar +5 more
core +3 more sources