Results 101 to 110 of about 50,556 (278)

Evaluation of operation lifetime of microwave low noise NPN bipolar junction transistor

, 2020
Zhichao Wei, Yi Sun, Hongwei Zhang, Pengchao Xue, Yabin Sun   +4 more
openalex   +1 more source

Neutron Displacement Damage in Bipolar Junction Transistors Isolated from an Integrated Circuit

, 2023
Sneha Banerjee, Joshua Young, Xujiao Gao, Lawrence Musson, Thomas Edward Buchheit, Hugh Barnaby, Le Thanh Triet Ho   +6 more
openalex   +1 more source

STUDY ON THE OPTIMIZATION OF IGBT THERMAL MANAGEMENT FOR PTC HEATER [PDF]

Journal of Engineering Science and Technology, 2015
It is essential to optimize HVAC (Heating, Ventilation and Air-Conditioning) system for a thermal plant or an electric vehicle since it has a significant effect on the thermal efficiency.
J. W. JEONG, Y. L. LEE
doaj  

Lead‐Free Sb–Bi Perovskite‐Inspired Memristors: Compositional Control of Vacancy Migration for Neuromorphic Computing

Small Structures, Volume 7, Issue 3, March 2026.
Composition engineering of Sb–Bi‐based systems enables tunable ionic conduction and stable, lead‐free memristors. The interplay between capacitive and inductive processes gives rise to strong synaptic functionalities, highlighting their potential for emerging neuromorphic computing applications.
Ramesh Kumar, Noora Lamminen, Aman Ghadge, Monojit Bag, G. Krishnamurthy Grandhi, Paola Vivo   +5 more
wiley   +1 more source

Addressable Delivery Systems Based on Ion Bipolar Junction Transistors [PDF]

, 2010
Klas Tybrandt, Karin Larsson, Erik O. Gabrielsson, Edwin W. H. Jager, Agneta Richter‐Dahlfors, Magnus Berggren   +5 more
openalex   +1 more source

A Self-Amplified Near-Infrared Bipolar Phototransistor With a PbSe Nanoband Array Heterostructure for Pharmaceutical Solute Detection

IEEE Photonics Journal
This paper introduces a new device concept and outlines the fabrication process of a bipolar junction transistor based on an IGZO/NiO/PbSe nanoband array heterostructure.
Yujie Fu, Chun Lei, Long Teng, Yongbing Zhu, Liyao Jiang, Yuqin Cai, Dandan Zhou, Zhi Tao   +7 more
doaj   +1 more source

A method for monitoring junction temperature of IGBT module based on turn-off voltage

机车电传动
The precise junction temperature monitoring is of paramount importance for enhancing the reliability of insulated gate bipolar transistor (IGBT) modules and extending the lifespan of devices.
LAN Weiyin, CUI Wei, CHEN Wenxuan, ZOU Yingqiao, LI Jiacheng, GE Xinglai   +5 more
doaj  

Optically switched graphene/4H-SiC junction bipolar transistor

, 2023
M. V. S. Chandrashekhar
openalex   +1 more source

1836 V, 4.7 mΩ•cm² High Power 4H-SiC Bipolar Junction Transistor

, 2006
Jian Hui Zhang, Jian Wu, P. Alexandrov, Terry Burke, Kuang Sheng, Jian Hui Zhao   +5 more
openalex   +1 more source

Rancang Bangun Modul Praktikum Penggunaan Bipolar Junction Transistor Sebagai Sakelar Berbasis Arduino Mega [PDF]

, 2020
Zeka Wijaya Kusuma, Sunu Pradana, Abdul Hamid Kurniawan   +2 more
openalex   +1 more source