Results 11 to 20 of about 50,556 (278)
Effects of Total Ionizing Dose on Bipolar Junction Transistor [PDF]
, 2010 Problem statement: The amount of ionizing radiation that Bipolar Junction Transistor (BJT) devices encounter during their lifecycle degrades both of their functional and electrical parameter performances.
Chee Fuei Pien
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Electrical characterization of commercial NPN bipolar junction transistors under neutron and gamma irradiation [PDF]
Nuclear Technology and Radiation Protection, 2014 Electronics components such as bipolar junction transistors, diodes, etc. which are used in deep space mission are required to be tolerant to extensive exposure to energetic neutrons and ionizing radiation.
OO Myo Min +6 more
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A 2-D bipolar junction transistor model for flexible inorganic semiconductors [PDF]
AIP AdvancesIn the deformed state, semiconductor devices typically undergo changes in electrical performance. The drift of collector current (Ic) in vertical bipolar junction transistors (BJTs) under uniaxial stress has been widely observed. The conventional electro-
Tonghao Wu +6 more
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Investigation of Temperature Effects on the Characteristics of Bipolar Junction Transistor [PDF]
BIO Web of ConferencesTemperature rise on the electronic board can have a noticeable impact on the electronic circuit which result in some changes in the basic parameters of the circuit elements.
Thiab Hasan Ghanim +2 more
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Combined effects of total ionizing dose and electromagnetic pulse on a bipolar junction transistor
Journal of Instrumentation, 2023 Bipolar Junction Transistors (BJTs) are widely used in the presence of ionizing radiation, such as in space or in the surroundings of nuclear reactors. For the application in these fields, the influence of Total Ionization Dose (TID) and Electromagnetic ...
W.B. Wu +5 more
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Ingeniería e Investigación, 2021 This paper describes the analysis of processes used in microand nanoelectronic device manufacturing. It also presents an exemplary and novel laboratory exercise in which an epitaxial planar n + pn bipolar transistor with junction isolation is illustrated
Vaidotas Barzdenas +4 more
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Analysis of junction capacitance characteristics of trench gate IGBT [PDF]
E3S Web of Conferences, 2021 Trench gate field termination IGBT represents the latest structure of insulated gate bipolar transistor (IGBT). Because the internal current of IGBT includes the charging and discharging current of gate capacitance and internal junction capacitance ...
Wang Bo
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Physica Scripta, 2021 Research of pressure sensor chip utilizing novel electrical circuit with bipolar-junction transistor-based (BJT) piezosensitive differential amplifier with negative feedback loop (PDA-NFL) for 5 kPa differential range was done. The significant advantages
Mikhail Basov
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Contributions to the Demythisation of the Bipolar Junction Transistor [PDF]
Revista Română de Informatică și Automatică, 2019 The Bipolar Junction Transistor (further referred as BJT) remains an interesting scientific topic. Explanations dedicated to this device generally resort to mathematic or circuit models, thus offering less substantial information based on physical ...
Dragoş NICOLAU
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Influence of Hole Current Crowding on Snapback Breakdown in Multi-Finger MOSFETs
IEEE Access, 2023 The snapback breakdown behavior of multi-finger MOSFETs was investigated using a device simulation. It is shown that snapback breakdown voltage (SNBV) varies depending on the source/drain configuration, even with the same two-finger structure.
Siyoun Lee +4 more
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