Results 191 to 200 of about 50,556 (278)
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GaN PNP light-emitting bipolar junction transistor
Journal of Physics D: Applied Physics, 2021An light-emitting bipolar transistor (LEBJT) has been developed in response to aspirations for on-chip electronics with GaN-based light-emitting diode (LED) devices.
W. Fu, Hoi Wai Choi
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Van der Waals Bipolar Junction Transistor Using Vertically Stacked Two‐Dimensional Atomic Crystals
Advanced Functional Materials, 2019The majority of microelectronic devices rely on a p‐n junction. The process of making such a junction is complicated, and it is difficult to make layers that form a junction with an atomic thickness.
Liwei Liu +5 more
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IEEE transactions on power electronics, 2019
This paper proposes an electrical method for estimation of the vertical junction temperature of silicon carbide bipolar junction transistors (SiC BJTs).
Bangbing Shi +7 more
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This paper proposes an electrical method for estimation of the vertical junction temperature of silicon carbide bipolar junction transistors (SiC BJTs).
Bangbing Shi +7 more
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Investigation of built-in bipolar junction transistor in FD-SOI BIMOS
Solid-State Electronics, 2019The built-in bipolar junction transistor (BJT) of a BIMOS fabricated in 28 nm ultra-thin body and BOX (UTBB) fully-depleted silicon-on-insulator (FD-SOI) high-k metal gate technology is investigated in common-emitter mode and in built-in metal-oxide-semi-
T. Bedecarrats +3 more
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2020
The bipolar junction transistor or BJT is a device capable of amplifying a voltage or current, something that diodes are not able to do. This amplifying characteristic makes the BJT suitable for a wide range of applications. The device was invented in 1947 by Walter H.
Stephan J. G. Gift, Brent Maundy
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The bipolar junction transistor or BJT is a device capable of amplifying a voltage or current, something that diodes are not able to do. This amplifying characteristic makes the BJT suitable for a wide range of applications. The device was invented in 1947 by Walter H.
Stephan J. G. Gift, Brent Maundy
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2020
The bipolar junction transistor, or BJT, is a three-lead device made by stacking three layers of doped semiconductor material with alternating p- and n-doping. Hence, there are NPN or PNP type transistors. While the details of the electronic behavior of these transistors differs from that seen for the FET, the general approach for circuit analysis ...
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The bipolar junction transistor, or BJT, is a three-lead device made by stacking three layers of doped semiconductor material with alternating p- and n-doping. Hence, there are NPN or PNP type transistors. While the details of the electronic behavior of these transistors differs from that seen for the FET, the general approach for circuit analysis ...
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1993
The first germanium alloy bipolar junction transistor (BJT) was invented by Bardeen, Brattain, and Shockley in 1948. The bipolar junction transistor is considered to be one of the most important electronic components used in integrated circuits (ICs) for computers, communications and power systems, and in many other digital and analog electronic ...
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The first germanium alloy bipolar junction transistor (BJT) was invented by Bardeen, Brattain, and Shockley in 1948. The bipolar junction transistor is considered to be one of the most important electronic components used in integrated circuits (ICs) for computers, communications and power systems, and in many other digital and analog electronic ...
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2015
In this chapter, the transistors have been grouped into two major categories viz. Bipolar junction transistors (BJTs) and Field effect transistors (FETs). They have been further classified into p-n-p and n-p-n types; MESFET, MISFET, MODFET, MOSFET, n-channel, p-channel types etc. The details of BJTs such as their construction, fundamentals of operation,
K. M. Gupta, Nishu Gupta
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In this chapter, the transistors have been grouped into two major categories viz. Bipolar junction transistors (BJTs) and Field effect transistors (FETs). They have been further classified into p-n-p and n-p-n types; MESFET, MISFET, MODFET, MOSFET, n-channel, p-channel types etc. The details of BJTs such as their construction, fundamentals of operation,
K. M. Gupta, Nishu Gupta
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1998
The bipolar junction transistor (BJT) was invented by a research team at Bell Laboratories in 1947. In 1948 John Bardeen and Walter Brattain announced the development of the point-contact transistor (Bardeen and Brattain, 1948). In the following year William Shockley’s paper on junction diodes and transistors was published (Shockley, 1949).
J. S. Yuan, J. J. Liou
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The bipolar junction transistor (BJT) was invented by a research team at Bell Laboratories in 1947. In 1948 John Bardeen and Walter Brattain announced the development of the point-contact transistor (Bardeen and Brattain, 1948). In the following year William Shockley’s paper on junction diodes and transistors was published (Shockley, 1949).
J. S. Yuan, J. J. Liou
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