Results 21 to 30 of about 50,556 (278)
Study the Effect of X-Ray on BJT Transistor at Different Periods of Time [PDF]
Kirkuk Journal of Science, 2010 In this research it has been studied the influence of X-Ray on the BJT (bipolar junction transistor ) NPN type NO 2N3035 for (5,10,15,20,25,30,35,40) min intervals .
Walla M. Mohammad
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Sensors and Actuators A: Physical, 2020 The paper presents MEMS pressure sensor chip utilizing novel electrical circuit with bipolar-junction transistor-based (BJT) differential amplifier with negative feedback loop (PDA-NFL).
Mikhail Basov
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Energy Reports, 2022 The temperature-sensitive electrical parameter (TSEP) method is widely used in the extraction and prediction of junction temperature (Tj) of power semiconductor devices.
Lingfeng Shao +6 more
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Magnetic bipolar transistor based on ZnO/NiO/Si heterostructure using pulsed laser deposition
AIP Advances, 2020 Oxide semiconductors are promising candidates for next generation electronics. In this work, magnetic bipolar transistor was fabricated by growing thin films of p-NiO and n-ZnO on n-type silicon wafer by pulsed laser deposition technique with an in-situ ...
Harsimrat Kaur +4 more
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Lateral bipolar junction transistor on a silicon photonics platform.
Optics Express, 2020 Integration of active electronics into photonic systems is necessary for large-scale photonic integration. While heterogeneous integration leverages high-performance electronics, a monolithic scheme can coexist by aiding the electronic processing ...
Aashu Jha +8 more
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Вестник Дагестанского государственного технического университета: Технические науки, 2016 In this article the opportunity to form a pn-junction bipolar transistor as a light-emitting, which will increase the degree of integration of large scale integrated circuits by reducing heat gain.
T. A. Ismailov +4 more
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Comparison of conventional and cascode drive of SiC BJTs
The Journal of Engineering, 2019 This study compares simple conventional and cascode driver circuits for the SiC bipolar junction transistor (BJT). A low-voltage silicon metal-oxide-semiconductor field-effect transistor is used in the emitter of the BJT to realise the cascode variant ...
Neville McNeill +3 more
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High Speed Non-Linear Circuit Simulation of Bipolar Junction Transistors
Active and Passive Electronic Components, 1999 This paper presents HIBTRA (High Speed Bipolar Transistor Analysis), a high speed non-linear bipolar transistor circuit simulation package. The paper discusses about the modelling of Bipolar Junction Transistor operated at high speed in the sinusoidal ...
M. N. Doja, Moinuddin, Umesh Kumar
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Compact nanosecond pulse generator based on IGBT and spark gap cooperation [PDF]
Bulletin of the Polish Academy of Sciences: Technical Sciences, 2020 The present paper describes a new architecture of a high-voltage solid-state pulse generator. This generator combines the two types of energy storage systems: inductive and capacitive, and consequently operates two types of switches: opening and closing.
Y. Achour, J. Starzyński, A. Łasica
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Sensors, 2021 This paper proposes a junction temperature estimation algorithm for the insulated gate bipolar transistor (IGBT) based on a power loss calculation and a thermal impedance model for inverter systems.
Heesun Lim +5 more
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