Results 31 to 40 of about 50,556 (278)

A Voltage Gain-Controlled Modified CFOA And Its Application in Electronically Tunable Four-Mode All-Pass Filter Design

open access: yesInternational Journal of Advances in Telecommunications, Electrotechnics, Signals and Systems, 2012
This paper presents a new active building block (ABB) called voltage gain-controlled modified current feedback amplifier (VGC-MCFOA) based on bipolar junction transistor technology.
Norbert Herencsar   +4 more
doaj   +1 more source

Least Squares Method for Identification of IGBT Thermal Impedance Networks Using Direct Temperature Measurements

open access: yesEnergies, 2020
State-of-the-art methods for determining thermal impedance networks for IGBT (Insulated Gate Bipolar Transistor) modules usually involves the establishment of the relationship between the measured transistor or diode voltage and temperature under ...
Humphrey Mokom Njawah Achiri   +3 more
doaj   +1 more source

Semiconductor Switch: Key Components and Future Developments in Power Electronics [PDF]

open access: yesMATEC Web of Conferences
The rapid development of modern industry has led to the expansion of the demand for high-end devices in a wider range of fields. Semiconductor switches have also become a popular research area as key components in electronic engineering. It also plays an
Ji Mengdie, Zhu Guli
doaj   +1 more source

A novel integrated monitoring method for MPPF capacitor and IGBT junction temperature of half‐bridge modules

open access: yesIET Power Electronics, 2023
Capacitance and Insulated gate bipolar transistor (IGBT) junction temperature are two critical healthy parameters for modular multilevel converters (MMC) sub‐modules (SMs) condition monitoring.
Wuyu Zhang   +4 more
doaj   +1 more source

Structural Features and Recent Progress of Super Junction IGBT

open access: yes机车电传动, 2021
With the development of insulated gate bipolar transistor (IGBT) technology, the field stop structure is getting closer to its theoretical limit. Super junction (SJ) is known as "milestone in power MOSFET" and has been introduced in IGBT to further ...
Jinping ZHANG, Xiang XIAO, Bo ZHANG
doaj  

Design and Technology Analysis Bipolar Transistors Based on High Performance Structures AlGaAs / GaAs Structures for Submicron LargeIntegrated Circuits

open access: yesФізика і хімія твердого тіла, 2017
This paper analyzes performance of bipolar transistors based on AlGaAs/GaAs heterostructures (HBT). Use of heterojunction as emitter junction allows radical improvement of its performance.
S. P. Novosyadlyj, S. I. Boyko
doaj   +1 more source

Polyphosphonium-based ion bipolar junction transistors [PDF]

open access: yesBiomicrofluidics, 2014
Advancements in the field of electronics during the past few decades have inspired the use of transistors in a diversity of research fields, including biology and medicine. However, signals in living organisms are not only carried by electrons but also through fluxes of ions and biomolecules.
Erik O. Gabrielsson   +2 more
openaire   +3 more sources

Electrothermal Model of SiC Power BJT

open access: yesEnergies, 2020
This paper refers to the issue of modelling characteristics of SiC power bipolar junction transistor (BJT), including the self-heating phenomenon. The electrothermal model of the tested device is demonstrated and experimentally verified.
Joanna Patrzyk   +2 more
doaj   +1 more source

Self-Powered Neuromorphic Touch Sensors Based on Triboelectric Devices: Current Approaches and Open Challenges. [PDF]

open access: yesSmall
This review outlines how triboelectric self‐powered tactile sensors can be integrated with neuromorphic devices to emulate human touch. It summarizes current coupling strategies, operational modes, and synaptic functions enabled by triboelectric nanogerator (TENG)‐based systems, while highlighting key mechanisms, performance considerations, and future ...
Torricelli F, Pace G.
europepmc   +2 more sources

Generation of short electrical pulses based on bipolar transistorsny [PDF]

open access: yesAdvances in Radio Science, 2004
A system for the generation of short electrical pulses based on the minority carrier charge storage and the step recovery effect of bipolar transistors is presented.
M. Gerding, T. Musch, B. Schiek
doaj  

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